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Bryx_Electronics > Basic Electronics > Flashcards

Basic Electronics Flashcards

1
Q

The atomic theory is largely credited to who?

A

John Dalton

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2
Q

Diameter of typical Nucleus

A

1x10^-14

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3
Q

Thomspon’s model of the atom

A

PLum pudding, (he discovered electron)

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4
Q

Rutherford’s discovery of subatomic particle

A

Proton

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5
Q

Chadwick’s discovery of subatomic particle

A

Neutron

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6
Q

What consists of proton?

A

2 up quark

1 down quark

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7
Q

Composition of neutron?

A

2 down quark

1 up quark

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8
Q

formula of maximum number of electrons in a given shell, n

A

n=2n^2

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9
Q

What letter does the first electron shell starts?

A

K

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10
Q

What is Pauli’s Exclusion Principle

A

no two electrons can have the same set of four quantum numbers

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11
Q

Equivalent of 1 eV in Joules

A

1.602x10^-19 J

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12
Q

Group IV elemental semiconductors

A

Diamond (C)
Silicon(Si)
Germanium(Ge)

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13
Q

The energy Required to move an electron from the valence band into the conduction band

A

energy gap (Eg)

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14
Q

It is the bonding resulting from the attractive forces of oppositely charged ions

A

Ionic band

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15
Q

It is the product of the attractive forces of group of positive ions and electrons, where the electrons are generally free to move about its ions

A

Metallic bond

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16
Q

It is when atoms of materials share electrons with another atoms

A

Covalent bond

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17
Q

At absolute zero temperature, how many free electrons are found in a semiconductor?

A

Zero, because they are locked in their valence bond

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18
Q

It refers to pure Semiconfuctors and free from impurities

A

Intrinsic materials

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19
Q

Semiconductors that are doped with impurities

A

Extrinsic Materials

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20
Q

it is the process of adding impurities

A

doping

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21
Q

Common pentavalent(N-Type) materials

A

Antimony(Sb) Arsenic(As) Phosphorus(P)

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22
Q

Common trivalent(P- Type) elements

A

Boron(B) Gallium (Ga) and Indium (I)

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23
Q

The difference on the effect of lightly and heavily doping a semiconductor

A

lightly doped - few impurities, higher resistance

heavily doped - more impurities, lower resistance

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24
Q

What is the depletion region?

A

no electrons or holes

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25
Q

It is the simplest diode

A

point contact germanium diode

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26
Q

It is where anode is more positive than the anode nd where the diode allow current to flow

A

Forward bias

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27
Q

It is the maximum voltage that can be applied that can be handled by the junction diode

A

Breakdown voltage

*note that silicon has higher breakdown voltage than germanium

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28
Q

Diode forward current equation

A

Id = Is*(e^(kVd/Tk) - 1)

Id = diode current
Is = reverse saturation current/Leakage current
Vd = forward diode voltage
Tk = room temp, in Kelvin
k = 11,600/n
n = 1 for Ge , 2 for Si (1 by default)
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29
Q

Formula for Effect of temperature on reverse saturation current

A

I(snew) = I(s)·e^k(T1 - T0)

I(snew) =reverse saturation current at new temperature
I(s) =reverse saturation current at room
k = 0.07
T1 = new temperature
T0 = room temperature
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30
Q

Formula for Effect of temperature on threshold voltage

A

Vth1 = Vth + k*(T1 - T0)

Vth1 = threshold voltage at new temperature
Vth = threshold voltage at room temperature ( 0.3 V for Ge and 0.7 V for Si)
k = -2.5 mV/C for Ge = -2.0 mV/C for Si
T1 = new temperature
T0 = room temperature
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31
Q

Three Diode Equivalent Models

A

Ideal Diode Model
Simplified Diode Model
Piecewise Linear Diode Model

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32
Q

A diode model with no threshold voltage required and has no resistance when forward biased

A

Ideal Diode Model

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33
Q

A diode model when forward biased has threshold voltage and has no resistance

A

Simplified Diode Model

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34
Q

A diode model when forward biased has threshold voltage and resistance

A

Piecewise Linear Diode Model

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35
Q

Threshold Voltage for Silicon

A

0.7 V

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36
Q

Threshold Voltage for Germanium

A

0.3 V

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37
Q

The forward resistance of the diode under DC circuit analysis

A

Static Resistance

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38
Q

Formula for Static Resistance

A 
Rd = DC voltage across the diode / Diode's current 
Rd = Vd / Id
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39
Q

The forward resistance of the diode under AC circuit Analysis

A

Dynamic Resistance

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40
Q

Formula for Dynamic Resistance

A 
rd = small change of voltage / small change of diode's current 
rd = dVd / dId 
rd = 26 mV / Id
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41
Q

The forward resistance of the diode under AC circuit analysis

A

Average AC Resistance

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42
Q

Formula for Average AC Resistance

A 
r(ave) = Change in voltage across the diode / Change in diode's current
r(ave) = Δ Vd / Δ Id
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43
Q

Capacitance prominent when diode is Forward-biased:

A

The diffusion / storage capacitance

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44
Q

Capacitance prominent when diode is Reverse-biased:

A

The transition / depletion-region capacitance

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45
Q

At lower frequency the diode(due to capacitance) acts like a ___________

A

Open circuit

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46
Q

At high frequency the diode(due to capacitance) acts like a ___________

A

Short Circuit

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47
Q

The magnitude of current that the diode can handle without burning when forward biased

A

Forward Current

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48
Q

This is the required voltage in order to produce forward current

A

Forward Voltage

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49
Q

The magnitude of current that will leak when the diode is reverse-biased

A

Reverse Saturation current

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50
Q

Other term for Reverse Saturation current

A

Leakage Current

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51
Q

This is the maximum reverse voltage that can be applied before current surge and enters the Zener region

A

Reverse Breakdown Voltage
Peak Reverse Voltage
Peak Inverse Voltage

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52
Q

This is the time taken by the diode to operate from forward conduction to reverse bias condition

A

Reverse Recovery Time

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53
Q

The maximum power the diode can handle without burning

A

Maximum Power Dissipation

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54
Q

The factor that tells the reduction of power handling capability of the diode due to the increase of ambient temperature from room temperature

A

Linear Power Derating Factor

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55
Q

The maximum temperature the diode can operate before burning its junction

A

Maximum Junction Temperature

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56
Q

Formula for Reverse Recovery Time

A

T(rr) = t(s) + t(t)

T(rr) = the time elapsed from forward to reverse bias
t(s) = the transition time
t(t) = the storage time
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57
Q

Analogous to the junction diode except that the doping is controlled precisely so that it will have a well defined and smaller breakdown voltage

A

Zener Diode

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58
Q

The Zener effect was discovered by

A

Dr. Clarence Melvin Zener

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59
Q

Formula for Temperature Coefficient (measures ΔVz ad temperature changes)

A

Tc = ΔVz / Vz (T1 - T0) x 100%

ΔVz = Resulting Change in Zener Potential
Vz = The Zener Diode Breakdown Voltage
T1 = new temperature
T0 = room temperature
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60
Q

A Variable Capacitor, Commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers

A

Varactors

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61
Q

Varactors are usually operated in what bias

A

Reverse-Biased

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62
Q

It is the sum of the junction and case capacitances

A

Total diode capacitance

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63
Q

It is the resistance in series with the junction of the diode

A

Series resistance

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64
Q

Formula for Quality Factor of a varactor

A

Q = 0.159 / (f·R(s)·C(t))

f = frequency in Hertz
R(s) = series resistance in ohms
C(t) = total capacitance in farad
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65
Q

It is the frequency where the quality factor of the varactor is 1

A

Cutoff frequency

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66
Q

It is the ratio of capacitance variation at a reverse voltage of -4 or -6 to the capacitance at approximately 80 percent of the breakdown voltage

A

Total Capacitance Ratio

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67
Q

It is defined as the performance of a varactor used as a frequency multiplier

A

Conversion efficiency(varactor)

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68
Q

Formula for Conversion efficiency(of a varactor)

A

η = Po / Pi x 100%

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69
Q

Relation of temperature to capacitance

A

directly proportional

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70
Q

Diodes usually made of doped silicon or germanium

A

Generic Diode

71
Q

Type of diode that is made to conduct backwards

A

Zener Diode

72
Q

Conduct in the reverse direction when the reverse bias voltage exceeds the breakdown voltage

A

Avalanche diode

73
Q

Occurs when the reverse electric field across the pn junction causes a wave of ionization

A

Avalanche effect

74
Q

Reverse Breakdown of avalanche diode

A

6.2 V

75
Q

Are avalanche diodes designed specifically to protect other semiconductor devices from electrostatic discharges

A

Transient voltage suppression diode (TVS)

76
Q

Type of diode that subject to optical charge carrier generation and therefore most are packaged om light blocking material.

A

Photodiodes

77
Q

Type of diode that formed in a direct band-gap semiconductor, such as gallium arsenide, carriers that cross the junction emit photons when they recombine with majority carrier on the other side

A

Light Emitting Diode (LED)

78
Q

Forward potential of Red LED and Violet LED

A

1.2 V and 2.4 V

79
Q

What is the first LEDs created

A

Red and Yellow

80
Q

An LED-like structure is contained in a resonant cavity formed by polishing the parallel end faces

A

Laser Diode

81
Q

A Diode that have a lower forward voltage drop than a normal PN junction, because they are constructed from a metal to semiconductor contact.

A

Schottky Diode

82
Q

is a semiconductor junction diode having the ability to generate extremely short pulses (Low Reverse Recovery Time).

A

step recovery/snap-off diode

83
Q

a two-terminal semiconductor diode using tunneling electrons to perform high-speed switching operations

A

Esaki or tunnel diode

84
Q

Similar to tunnel diode that exhibit a region of negative differential resistance and is used in Microwave Frequency Oscillation

A

Gunn diodes

85
Q

A block of n-type semiconductor is built, and a conducting sharp-point contact made with some group-3 metal is placed in contact with the semiconductor.

A

Point Contact Diode

86
Q

They are used as voltage-controlled capacitors

A

Varicap

87
Q

A diode with similar to JFET which allow a current through them to rise to a certain value

A

Current-limiting field-effect diodes

88
Q

Some diode applications

A 
Radio Demodulation
Power Conversion
Over-voltage Protection
Logic Gates
Ionizing Radiation Detectors
Temperature measuring
Charge coupled devices
89
Q

It is a three terminal current controlled solid state device which is capable of amplifying signals

A

Transistor

90
Q

Who invented the transistor?

A

John Dalton and Walter Brattain
Bell Laboratories
1947

91
Q

What are the first type of transistor?

A

Point-Contact Type

92
Q

The theorist who was leading the research about point-contact type transistor

A

William Shockley

93
Q

The main conduction channel employs both electrons and holes to carry the main electric current.

A

Bipolar Junction Transistor (BJT)

94
Q

Three parts of the transistors

A

Emitter, Base and Collector

95
Q

Two basic modes of transistor

A

Switch and Amplifier

96
Q

When the Base-Emitter is Forward and Base-Collector is Reverse, The operating mode is

A

Active or Amplifier

97
Q

When the Base-Emitter is Forward and Base-Collector is Forward, The operating mode is

A

Saturation ( On Mode )

98
Q

When the Base-Emitter is Reverse and Base-Collector is Reverse, The operating mode is

A

Cut-off ( Off Mode )

99
Q

Current Relationships of TBJT

A

IE = IB + IC + ICBO

ICBO ≈ 0 (neglible)

100
Q

It is the common base amplification factor

A

α (alpha)

101
Q

Formula for α (alpha)

A

α = IC / IE

102
Q

It is the common emitter forward current amplification factor

A

β (beta)

103
Q

Formula for β ( beta)

A

β = IC / IB

104
Q

It is the common collector forward current amplification factor

A

γ = IE / IC

105
Q

Parameter Relationship for α, β and γ

A 
α = β / β + 1 
β = α / α - 1 
γ = 1 + β
106
Q

It is used for impedance matching application especially for low to high impedance conversion

A

Common Base Configuration

107
Q

It is most used configuration for amplifier application

A

Common Emitter Configuration

108
Q

It is also used for impedance matching application especially for high to low impedance conversion

A

Common Collector Configuration

109
Q

A process of applying a DC voltage to a transistor to achieve the preferred region of operation or for what application is the transistor intended

A

Biasing

110
Q

Type of biasing which has the greatest power gain but the most unstable type of biasing.

A

Fixed Bias

111
Q

Type of biasing which is considered the most stable of all the biasing configurations but requires more resistors than any other biasing

A

Voltage divider bias configuration

112
Q

Type of biasing which is more stable than fixed-bias but with a smaller power gain

A

Emitter-stabilized bias configuration

113
Q

Type of biasing which has the advantage of requiring fewer resistors compared to voltage divider bias without reducing the stability

A

Voltage feedback bias configuration

114
Q

Two main criteria considered in choosing which bias configuration is to be used

A

Power gain

Stability

115
Q

When temperature increases, the β ______________
When temperature increases, the Vbe ____________
When temperature increases, the Ico __________

A

increases
increases
increases

116
Q

Formula for stability factors

A 
S(Ico) = ∆Ic / ∆Io
S(Vbe) = ∆Ic / ∆Vbe
S(β) = ∆Ic / ∆β
117
Q

Formula for Total Change of Collector Current

A

∆Ic = S(Ico) ∆Ico + S(Vbe) ∆Vbe + S(β)∆β

118
Q

The most commonly used model in small signal analysis of transistors

A

Hybrid Parameter Model

119
Q

Equations for H-Parameter

A 
Vi = hi⋅Ii + hr⋅Vo
Io = hf⋅Ii + ho⋅Vo
120
Q

Formula of a re model

A

re = 26 mV / IE

121
Q

Comparison between H-parameter and Re model

A 
For input impedance or resistance
re ≈ h(ib)
βre≈h(ie)≈h(ic)
For amplication factor
α≈h(fb)
β≈h(fe)≈h(fc)
122
Q

Parameter for Common Base

A 
Input impedance - Low
Output Impedance - High
Current Gain - Low ≈ 1
Voltage Gain - High
Power Gain - Moderate
Phase shift  - None
123
Q

Parameter for Common Emitter

A 
Input impedance - Moderate
Output Impedance - Moderate
Current Gain - Moderate
Voltage Gain - Moderate
Power Gain - High
Phase shift  - 180°
124
Q

Parameter for Common Collector

A 
Input impedance - High
Output Impedance - Low
Current Gain - High
Voltage Gain - Low ≈ 1
Power Gain - Low
Phase shift  - None
125
Q

Transistor model know as the transistor physical representation

A

T-equivalent circuit

126
Q

Transistor model used in DC analysis

A

Ebers-Moll model

127
Q

Transistor model used in small signal analysis

A

Hybrid model

128
Q

Transistor model used in high frequency analysis

A

Hybrid-pi model or Giacolleto model

129
Q

Transistor model used small signal and large signal analysis

A

Dynamic or re model

130
Q

Is a transistor that uses an electric field to control the electrical behavior of the device.

A

Field-Effect Transistor

131
Q

Different types of field-effect transistor

A

JFET ( Junction Field-Effect Transistor )
MOSFET ( Metal-Oxide-Semiconductor Field-Effect Transistor )
MESFET ( Metal-Semiconductor Field-Effect Transistor )
HEMT ( High Electron Mobility Transistor )

132
Q

Is a unipolar device that is either only electron or hole is the charged carrier but not both

A

JFET ( Junction Field-Effect Transistor )

133
Q

Is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope

A

Triode

134
Q

Formula for Drain current for FET

A 
i(d) = I(DSS) ( 1 - (VGS / VP))^2
i(d) = Drain current
I(DSS) = Drain to Source Current Saturate
VGS = Gate to Source Voltage
VP = Pinch Off Voltage
135
Q

It is constructed by placing an insulting layer between the gate and the channel allows for a wider range of control voltages and further decreases the gate current

A

MOSFET ( Metal-Oxide-Semiconductor Field-Effect Transistor )

136
Q

Type of MOSFET which has a channel in resting state that gets snakker as a reverse bias is applied, this device conducts current with no bias applied

A

D-MOSFET ( Depletion Metal-Oxide-Semiconductor Field-Effect Transistor )

137
Q

Type of MOSFET which is built without a channel and does not conduct current when Vgs = 0

A

E-MOSFET ( Enhancement Metal-Oxide-Semiconductor Field-Effect Transistor )

138
Q

Type of FET which quite similar to a JFET in construction and terminology. The difference is that Schottky junction is used.

A

MESFET ( Metal-Semiconductor Field-Effect Transistor )

139
Q

It is a FET with a junction between two materials with different band gaps as the channel instead of an n-doped region

A

HEMT ( High Electron Mobility Transistor )

140
Q

Conductors ideally have _____ valence electrons

A

1

141
Q

Valence electron count of a conductor

A

Less than four

142
Q

Group in Periodic table attributed with properties that make them conductors

A

Group 1B

Cu, Ag, Au

143
Q

Insulators ideally have _____ valence electrons

A

8

144
Q

Valence electron count of an insulator

A

More than four

145
Q

A Semiconductor has _______ valence electrons

A

4

146
Q

Semiconductors act like _________ at 0°K

A

Insulator

147
Q

Insulators have energy gaps above

A

5 eV

148
Q

With a conductor, its valence band _______ the conduction band

A

Overlaps

∴ Eg Conductor = 0 eV

149
Q

The distance of the electron from the nucleus is ________ proportional to the energy gap required for electron to move to conduction band

A

Inversely Proportional

∴ As atomic number decreases, energy gap increases

150
Q

Energy Gap of Silicon

A

1.1 eV

151
Q

Energy Gap of Germanium

A

0.67 eV

152
Q

Energy Gap of Gallium Arsenide

A

1.43

153
Q

Energy Gap of Gallium Phosphide

A

2.26

154
Q

At 0°K, there are ______ free electrons in a semiconductor

A

zero

155
Q

The number of free electrons in 1 cm³ of Silicon

A

1.5 x 10^10 electrons

156
Q

The number of free electrons in 1 cm³ of Germanium

A

2.5 x 10^15 electrons

157
Q

At room temperature, Silicon is _________

A

Insulative

158
Q

At room temperature, The Thermal energy will only produce ______ free electrons in a material

A

few

159
Q

A Doped Semiconductor that are doped with Trivalent Impurities

A

P-Type Semiconductor

160
Q

A Doped Semiconductor that are doped with Pentavalent Impurities

A

N-Type Semiconductor

161
Q

Another term for Trivalent atoms

A

Acceptor atoms

3 Valence electrons; to become four Valence semiconductor, atom must ACCEPT an electron

162
Q

Another term for Pentavalent atoms

A

Donor atoms

5 Valence electrons; to become four Valence semiconductor, atom must DONATE an electron

163
Q

P-Type Semiconductors have _______ as Majority Carriers, and _________ as Minority Carrier

A

Holes as Majority Carriers (P-Type, POSITIVE)

Electrons as Minority Carriers

164
Q

N-Type Semiconductors have _______ as Majority Carriers, and _________ as Minority Carrier

A

Electrons as Majority Carriers (N-Type, NEGATIVE)

Holes as Minority Carriers

165
Q

Net Charge INSIDE The depletion region of a PN Junction is _____

A

Zero

166
Q

In Forward Bias Condition, The Depletion Region ______

A

Narrows

167
Q

In Reverse Bias Condition, The Depletion Region ______

A

Widens

168
Q

Alternative Forward Current (Id) Equation

A

Id = Is( [e^(Vd / (nVt)] - 1)

Vt - Thermal Voltage (26mV @ 300°K)
Vd - Forward Diode Current
Is - Reverse Saturation/Leakage Current
n - 1 by default

169
Q

Formula for Thermal Voltage (Vt)

A

Vt = k*T / qe

k - Boltzmann’s Constant
T - Temperature(in °K)
qe - Electron Charge (1.6 x 10^-19 C)

170
Q

The Storage/Diffusion Capacitance is the _______ of the diode

A

Maximum

C =Ea/d, DR acts as dielectric, and since DR is thin at forward bias, Capacitance increases

171
Q

The Transition/Depletion-Region Capacitance is the _________ of the diode

A

Minimum

C =Ea/d, DR acts as dielectric, and since DR is thick at reverse bias, Capacitance decreases

172
Q

Why does a PN Junction diode have capacitance in the first place?

A

DR acts like a Dielectric(any non-conductor) between two plates (P-Type and N-Type Material act like plates)

173
Q

Reverse Recovery Time ranges from _____ to ____

A

few nanoseconds to few hundred picoseconds

Bryx_Electronics (11 decks)

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