THYRISTORS Flashcards
class of semiconductor devices characterized by 4-layers of alternating p and n materials. Four-layer devices act as either open or closed switches.
-THYRISTORS
It is a rectifier constructed of silicon material with a third terminal for control purposes.
-SILICON CONTROLLED RECTIFIER
resistance is typically 100 kOhms or more.
-REVERSE
resistance of the SCR is typically 0.01 to 0.1 ohm.
-DYNAMIC
SCR can be turned on by exceeding the forward breakover voltage or
-GATE CURRENT
Turning off SCR
- Anode current interruption
- Forced commutation
times of of SCRs are typically 0.1 to 1 microsecond.
-TURN ON
times of SCRs are typically 5 to 30 microsecond.
-TURN OFF
is that voltage above which the SCR enters the conduction region.
-FORWARD BREAKOVER VOLTAGE
is the value of gate current necessary to switch the SCR from the forward-blocking region to the forward conduction region under specified conditions.
-GATE TRIGGER CURRENT
is that value of current below which the SCR switches from the conduction state to the forward blocking region under stated conditions.
-HOLDING CURRENT
are the regions corresponding to the open circuit condition for the controlled rectifier which block the flow of charge (current) from anode to cathode.
-FORWARD AND REVERSE BLOCKING
is equivalent to the Zener or avalanche region of the fundamental two-layer semiconductor diode.
-REVERSE BREAKDOWN VOLTAGE
The characteristics of the device are essentially the same as those for the SCR.
-SILICON CONTROLLED SWITCH
can be used to turn the device either on or off.
-ANODE GATE CONNECTION