DIODES Flashcards

1
Q

the junction diodeis formed when an n-type and a p type materials are brought together.

A

-P-N JUNCTION DIODES

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2
Q

p region is connected to a conductive terminal. p region is called what?

A

-ANODE

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3
Q

n region is connected to a second conductive terminal. n region is called what?

A

-CATHODE

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4
Q

condition of the diode without any supply voltage.

A

-DIODE NO BIAS

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5
Q

the region of uncovered positive and negative ions.

A

-DEPLETION REGION

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6
Q

in the absence of an applied bias voltage, the net flow of charge in any one direction for a semiconductor diode is

A

-ZERO

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7
Q

is the condition that allows current through the pn junction.

A

-DIODE FORWARD BIAS

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8
Q

extremely small current that exists in reverse bias after the transition current dies out is caused by the minority carriers in the n and p regions.

A

-REVERSE CURRENT

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9
Q

if the external reverse bias voltage is increased to a value called the breakdown voltage, the reverse current will drastically increase.

A

-DIODE REVERSE BREAKDOWN

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10
Q

the multiplication of conduction electrons is known as the

A

-AVALANCE EFFECT

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11
Q

Vth is the required voltage across junction of the diode before forward current flow.

A

-THRESHOLD VOLTAGE

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12
Q

the magnitude of current the diode can handle without burning when forward biased.

A

-FORWARD CURRENT

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13
Q

the required voltage in order to produce forward current or the voltage drop across the diode when conducting.

A

-FORWARD VOLTAGE

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14
Q

the magnitude of current that will leak when the diodes is reversed biased, ofentimes called leakage current.

A

-REVERSE CURRENT

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15
Q

the maximum reverse voltage that can be applied before current surges.

A

-REVERSE BREAKDOWN VOLTAGE

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16
Q

the time taken by the diode to operated in the reverse condition from forward conduction.

A

-REVERSE RECOVERY TIME

17
Q

the maximum power the diode can handle without buring.

A

-MAXIMUM POWER DISSIPATION

18
Q

the reduction of power handling capability of the diode due to the increase of ambient temperature from room temperature.

A

-LINEAR POWER DERATING FACTOR

19
Q

the maximum temperature the diode can operate before burning its junction.

A

-MAXIMUM JUNCTION TEMPERATURE

20
Q

diffusion capacitance or storage capacitance

A

-FORWARD BIAS CAPACITANCE

21
Q

transition capacitance or depletion region capacitance

A

-REVERSE BIAS CAPACITANCE

22
Q

diode capacitance is equivalent to an open circuit.

A

-LOW FREQUENCY

23
Q

diode capacitance is equivalent to a short circuit.

A

-HIGH FREQUENCY

24
Q

Defined as a point on the characteristic curve.

A

-DC OR STATIC RESISTANCE

25
Q

defined by a tangent line at the q point

A

-AC OR DYNAMIC RESISTANCE

26
Q

defined by a straight line between limits of operation

A

-AVERAGE AC RESISTANCE

27
Q

a silicon pn junction device that is designed for operation in the reverse-breakdown region.

A

-ZENER DIODE

28
Q

designed to operate in reverse breakdown.

A

-ZENER BREAKDOWN

29
Q

two types of reverse breakdown in a zener diode are

A

-AVALANCHE AND ZENER