Physics Leg Flashcards

1
Q

Under mechanicalproperties of matter what is stress ,strain and Young’s modulus and modulus
State their formulas and sub units

Elastic modulus is used in describing the elastic properties of solids undergoing small deformations.
Suppose a stationary bar is subjected to an axial load. This can be achieved, for example, by fixing one end of the bar and applying a longitudinal force to the other or by applying equal and opposite longitudinal forces to the bar true or false

A

Stress = ratio of force to cross-sectional area
Cross sectional area- pi r squared. R in m so if it’s in mm,change it to m and if you get diameter instead of radius ,divide the diameter into two because the diameter is twice the length of the radius.
–Stress has dimensions of pressure
–Unit Pa or N m-2

Stress
The stress in the bar is defined as the ratio of force to cross-sectional area. Since the force is perpendicular to the cross-section of the bar, it is designated on the slide with a ┴ subscript. The stress is tensile if the load stretches the bar; it is compressive if the load squeezes the bar. Stress has dimensions of pressure; it is given in units of pascals (Pa) or N m-2.
So As expected by the units, stress is given by dividing the force by the area of its generation, and since this area (“A”) is either sectional or axial, the basic stress formula is “σ = F ┴/A”.

•Strain = ratio of elongation to initial length
It has no unit
–Strain is dimensionless (pure number)
•For small deformations, stress is proportional to strain

Strain
The strain in the bar is the ratio of elongation to length of the bar. For small deformations, strain is to an acceptable degree of accuracy, the ratio of change in size, to original size. Strain, being a ratio of two quantities of the same dimension, is a pure number. For example, tensile strain is ratio of change in length, (Dl = l - l0(lnaught) ) to initial length l0(lnaught); therefore e = Dl/l0 has no units.

Change in length or new length produced : the full length of the wire after the stretch - the initial length of the wire before the stretch
So if the full length is 6 and at first the length was 4, the change in length is 2. So 6-4.
But if they don’t say anything about the full length before the stretch and all they say is the initial length and now it’s been stretched or extended to a new figure then the change in length is the new figure after the stretch
Example , a force is applied to a 4m wire and this produces an extension of 0.24mm

So intial length is 4m and the change in length is 0.24 x 10 to the power -3.
So strain is 0.24 (x 10 to the power -3 )m divided by 4m
Basic strain formula: ε = ΔL/Lnaught (the initial length)

•Modulus = ratio of stress to strain
•For tensile and compressive loads, the modulus is Young’s modulus E
–E is characteristic of a given material

. Modulus
For small deformations, stress is proportional to strain. The ratio of stress to strain is called modulus.
Elastic moduli are given in units of Pa or N m-2. A material is characterized by its elastic moduli: Young’s, bulk, and shear moduli. We shall see that any two of these can be used to calculate the third.

Young’s Modulus
For tensile and compressive stresses, the modulus is Young’s modulus.
How easy it is to stretch a material
Young’s modulus is characteristic of a given material. See Table 11.1 in Young (not the same person after whom we have Young’s modulus) and Freedman for approximate values of Young’s modulus for several materials.

Young’s modulus equation is E = tensile stress/tensile strain = (FL) / (Axchange in L)

Or E= σ/ε

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
2
Q

Questions:
Distinguish between tensile ,compressive and shearing loads
Relate the three moduli of elasticity(stress,strain,Young’s modulus)
Solve this question:
A composite wire of 3mm uniform diameter consisting of a copper wire of length 2.2m and steel wire of length 1.6m stretches under a load by 0.700mm. CALCUKATE the load
Take Young’s modulus for copper to be 1.1 x10 to the power 11 N/m raised to the power 2 and for steel its 2.0 x 10 to the power 11 N/m raised to the power 2

If they say load or tension,they still mean force.

Example 2:
A copper wire LM is fused at one end M to an iron wire MN
The copper wire has a length of 0.900m and cross section of 0.90x10 to the power -6 msquared
Iron wire has length 1.400m and cross secretion 1.30x 10 to the power -6 msquared . The compound wire is stretch; it’s total length increases by 0.0100m
Find the tension applied the compound wire,extension of each wire and the ratio of the extensions of the two wires
YM of copper is 1.30x10 to the power 11 Pa and YM of iron = 2.0 x 10 to the power 11 Pa

A

Solution:
A composite wire is a wire is a wire made up of two different materials
Both wires don’t have to be of the same cross sectional area.
So change in length of the composite wire is the change in length in the first wire + the change in length of the second wire

Young’s modulus = stress / strain
= FL/Ax change in L

Change in L= FL / AxYoungs modulus

Intial Length of copper = 2.2m
Area of copper is= pi x r squared
r=1.5x(10 to the power -3)m
YM for copper is 1.1 x10 to the power 11 N/m raised to the power 2

Intial Length of steel:1.6m
Area of steel: pi x r squared
r=1.5x(10 to the power -3)m
Same for copper cuz the diameter was uniform.
YM for steel: 2.0 x 10 to the power 11 N/m raised to the power 2

Chnage in L = change in L for copper + change in L for steel.

Chnage in L=0.7 (x 10 raised to the power -3 )m

0.7 x 10 raised to the power -3 )m= change in L for copper + change in L for steel.

Change in L for copper =FL / AxYoungs modulus

= F x 2.2m/ (pi x r squared
r=1.5x(10 to the power -3)m ) x 1.1 x10 to the power 11

Change in length for copper is 0.000002829F

Chnage in length for steel: F x 1.6m/ (pi x r squared
r=1.5x(10 to the power -3)m ) x 2.0 x10 to the power 11
Chnage in length for steel = 0.000001132F

0.7 x 10 raised to the power -3 )m= 0.000002829F + 0.000001132F

0.7 x 10 raised to the power -3 )m= 0.000003961F
F= 0.7 x 10 raised to the power -3 )m/ 0.000003961

The load is F= 176.733 or 177N

Answers for second problem:
Tension is 780N, extension for copper is 0.006m and for iron is 0.004m
The ratio of the extensions of copper to iron is 1:5

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
3
Q

What is bulk stress,strain and modulus
State their formulas

Bulk modulus is used to measure how incompressible a solid is. Besides, the more the value of K for a material, the higher is its nature to be incompressible. For example, the value of K for steel is 1.6×1011 N/m2 and the value of K for glass is 4×1010N/m2. Here, K for steel is more than three times the value of K for glass. This implies that glass is more compressible than steel.
True or false

Solve this question
An aluminum (B = 70x10to the power 9 N/m to the power 2) ball with a radius of 0.5m falls to the bottom of the sea where the pressure is 150 atm. a. What is the original volume of the ball? b. What’s the Chnage in volume? c. What’s the new volume of the ball ?
d. What is the bulk stress on the ball?
e. Calculate the bulk strain on the ball

A

A body immersed in a fluid experiences pressure over its surface thus decreasing its volume as compared to its volume before it was immersed in the fluid therefore bulks modulus is negative because the volume of the object decreases in the fluid
Chnage jn volume = -1/B multiplied by (F/A ) x Initial volume

For fluids,pressure is the equivalent of stress since both is force /area
Therefore Chnage in volume = -pressure x initial volume divided by B

Bulk modulus (B)= stress /strain
= P/(-Chnage in V/intial volume)

There is a force everywhere perpendicular to surface of the body
A change in pressure causes a change in volume
Increase in pressure decreases volume 
Bulk stress = change in pressure
Volume strain = fractional change in volume
Negative because increase in pressure decreases volume
Bulk modulus B = ratio of bulk stress to bulk strain
B is positive: increase in pressure decreases volume (negative change); decrease in pressure (negative change) increases volume (positive change)
Compressibility k = reciprocal of bulk modulus
body immersed in a fluid is subject to forces perpendicular to its surface. These forces act inward on the surface, tending to squeeze the body and causing a deformation. Since the forces act on all sides,  the deformation occurs on all sides too, resulting in a change in volume. The force per unit area is just the fluid pressure. It is well known that pressure varies with depth; however, for a small body, the pressure is nearly uniform over the surface of the body. A change in pressure is accompanied by a change in volume. Bulk stress designates the change in pressure; bulk strain is the ratio of change in volume to initial volume. Note that an increase in pressure is accompanied by a decrease in volume whereas a decrease in pressure is accompanied by an increase in volume; therefore, bulk stress and bulk strain always have opposite signs. 

Bulk modulus is the ratio of bulk stress to bulk strain and is the appropriate elastic modulus for materials undergoing small bulk deformations. Note the negative sign in the definition. Bulk modulus is a positive number; since bulk stress and bulk strain have opposite signs, a negative sign is needed in the definition.

The reciprocal of bulk modulus is the compressibility of the material. Materials which are easily compressed have high compressibility and low bulk modulus; conversely, relatively incompressible materials have high bulk modulus.  

bulk modulus is a measure of the ability of a substance to withstand changes in volume when under compression on all sides. It is equal to the quotient of the applied pressure divided by the relative deformation.

Bulk modulus: bulk stress(change in pressure)/bulk strain(change in vol)
B = -(ΔP /(ΔV/Vnaught))
K=1/-B= therefore K =-1/Vnaught x ΔV/ΔP
Where:

B: Bulk modulus

ΔP: change of the pressure or force applied per unit area on the material

ΔV: change of the volume of the material due to the compression

V: Initial volume of the material in the units of in the English system and N/m2 in the metric system.

Answer to problem

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
4
Q

Explain shear stress,strain and modulus
For the mechanical properties watch videos from Jeff Siyambango on YouTube
Solve this question on shear modulus
Two parallel and opposite forces each of 4000 N are applied tangentially to the upper and lower faces or a cubical metal block 25cm on each side
Find the angle of shear,and the displacement of the upper surface relative to the lower surface
Shear modulus for the metak is 0.80 x10 to the power 11 Pa. (Fi or phi is 8x10 to the power negative something,2.0 x 10 to the power something m)

A

The formula for shear stress is tau = F / A, where ‘F’ is the applied force on the member, and ‘A’ is the cross-sectional area of the member.

The force moves or displaces the object on a surface from its initial distance or position.
The area parallel to the force is what is used to calculate the stress or the area seen after the object has been shifted from its original shape or distance is what is used
The force is tangential to that area

A third elastic modulus is connected with shearing loads. The block of material shown on the slide is subjected to two equal and opposite forces F|| parallel to a pair of opposite faces. These forces deform the block from the rectangular parallelepiped shown to a rhombic. Shear stress is the ratio of tangential force F|| to area A over which it acts. Deformation in this case is the displacement x of the upper relative to the lower face. Shear strain is defined as x/h, h being the initial height of the block. Note that shear strain equals the tangent of the shear angle q. If the shear angle is small as is true in small deformations, the shear strain is approximately equal to the shear angle as given in radians (not in degrees).

Shear modulus, also called modulus of rigidity, is the ratio of shear stress to shear strain.

Shear stresses occur when forces act tangential to the surface of a body
This causes displacement of one face relative to a parallel, opposite face
Shear stresses also occur in torsion
Shear stress = ratio of tangential force to area of surface
Shear strain = ratio of displacement to initial transverse height
Equals tangent of shear angle
If strain or shear is small and the change in x is also small, the angle will be very small so the tangent is approximately equal to shear angle in radians so tan theta ~ theta

Therefore Tan theta of the angle is approximately equal to Chnage in x / initial height of object

Arc length = radius multiplying the angle
So Chnage in x if the shear is very small it becomes the arc length
Therefore Chnage in x= h times the angle
So the angle= change in x/ h

Shear stress, often denoted by τ (Greek: tau), is the component of stress coplanar with a material cross section. It arises from the shear force, the component of force vector parallel to the material cross section. Normal stress, on the other hand, arises from the force vector component perpendicular to the material cross section on which it acts.
SI unit
pascal
τ = F/A
Shear modulus = ratio of shear stress to shear strain
Also called modulus of rigidity

Answer:
Shear modulus = FL/Chnage in x times A

Chnage in x= FL/ shear modulus x Area
= 4000 multiplied by 25x10 to the power -2 /0.80 x10 to the power 11 multiplied by (25x10 to the power -2 )squared ( the area of the cube that is parallel to the force will be L squared since that area on that specific part of the cube is a square shape but if you were finding the area of a cube it’ll be the area of a specific face times 6 cuz a cube has six faces so 6 times L squared)
= 2.0 x 10 to the power -7 m
This value is small so the approximations will hold
Tan phi = Chnage in x / h
= 2.0 x 10 to the power -7 m / 25x10 to the power -2
= 8x10 to the power -7 radians
This will be approximately equal to the angle phi

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
5
Q

What is Poissons ratio
Tensile strains are positive but compressive strains are negative .
The negative sign is Poissons ratio is there in case the lateral strains are opposite in sign to the longitudinal strains we’ll get a positive Poissons ratio
Poissons rule only applies for isotopic materials which are materials that have the properties in all directions

A

When you apply a load to a material in one direction the material will deform in the lateral direction.
Poissons ratio tells us how much the material will deform in the lateral directions

When a tensile force is applied longitudinally,there is a change in length of a cuboid in three dimensions the height(z) width (y)and length (x)
So strain for length is Chnage in length divided by original length, for height is Chnage in height divided by original height, for width is change in width divided by original width

Also when we apply the longitudinal load it turns out that the resulting strains (strain for height and strain for width) in the lateral directions are equal. They (strain for height can be proportional and strain for width can also be proportional) proportional to the strain in the longitudinal direction(strain for length)
The ratio between the longitudinal strain and the lateral strain is a material constant
The material constant is Poissons ratio v
So v= -strain in the lateral direction divided by the strains in the longitudinal direction

A strain in one direction is accompanied by proportionate strain in a perpendicular direction
Lateral strain is always the opposite sign : the material contracts laterally when there is axial elongation
Poisson ratio: v=ratio of transverse to axial strain
Positive number - 1/2
Elastic moduli are related through v

Elongation of a material in one dimension is always accompanied by contraction in the transverse dimension. If a rectangular block is stretched as shown in the diagram, the two pairs of sides perpendicular to the direction of elongation contract, the contraction being proportional to the longitudinal elongation when deformations are small. More precisely, the transverse (or lateral) strain, defined as change in lateral size divided by initial lateral size, is proportional to the axial strain. The magnitude of the proportionality constant is Poisson’s ratio, defined as the negative ratio of transverse strain to longitudinal strain. Poisson’s ratio is therefore a positive number, its value is less than ½, and it is the same for either transverse dimension.

The bulk and shear moduli are related to Young’s modulus through Poisson’s ratio by the given expressions. Indeed, only two constants are needed to describe the mechanical properties of a material. For example, given Young’s modulus and Poisson’s ratio, the other moduli can be calculated as shown on the slide. Two moduli could be given; then Poisson’s ratio can found and the third modulus calculated.

The relations shown suggest the necessity for Poisson’s ratio to be less than ½ and greater than -1. Poisson ratios are positive and less than ½ in practice. For steel it is about 1/3

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
6
Q

Solve these questions

• A 0.5 m length of wire is clamped at its upper end and a 20 kg mass is attached to its lower end. The wire stretches by 4.0×10-4 m. If the diameter of the wire is 2.0 ×10-3 m,
determine Young’s modulus of the material.
• When an oil specimen of initial volume 600 cm3 is subjected to a pressure increase of 3.6×106 Pa, its volume decreases by 0.45 cm3. What is the bulk modulus of the oil? What is the compressibility of the oil?
• The shear force on the rubber shoe sole of an athlete is 800 N over an area of 0.021 m2. The shear modulus of the sole is 1.8 × 107 Pa. Determine the shear strain of the sole.

• The Young modulus and Poisson ratio of an alloy are 30 GPa and 1/3 respectively. Determine
– its bulk modulus
– its shear modulus
– the transverse stress in a cube of side 10 cm when a 10 N force is applied across opposite faces

A

a. Young’s modulus = 78 GPa
b.Bulk modulus = 4.8 × 109 Pa
Compressibility = 2.1 × 10-10 Pa-1
c. Strain = 2.1 × 10-3
d. • B = 30 GPa
• S = 11.25 GPa
• Transverse stress = 333 Pa

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
7
Q

Under hydrostatics what is a fluid,what is gauge pressure? What is density? What is archimedes principle

A

A fluid is a substance that cannot resist shear stresses
Pressure in a static fluid is transmitted equally in all directions
Gauge pressure is absolute pressure minus atmospheric pressure
Pgauge=Pabs-Patm
Density is the ratio of mass to volume
An incompressible fluid has constant density
Archimedes Principle: a floating body displaces its own weight of fluid or the buoyant force or thrust on an object is equal to the weight of the fluid displaced by the object or the weight loss is equal to the weight of th fluid the object displaces

Apparent weight = weight of object in air - thrust force
Pressure p due to head h of a static fluid is proportional to density and head
Pressure (p) = density x g x h

Density = mass /volume
Mass of displaced liquid = density x volume
Weight of displaced liquid= mass x acceleration due to gravity
Weight = mass x g = (density x volume) x g
Force = density x g x volume
When an object is under water or under another fluid it experiences a buoyant force upwards that is equal to the weight (pulling it downwards) displaced by the object

Weight(N) = mass (kg) x acceleration of gravity (ms to the power-2)

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
8
Q

Under continuity equation, what does the principle do conservation of mass state
What is Bernoullis equation and what does it apply to
What principle is this equation derived from
Use the efficient engineer on YouTube to understand this better
Stagnation point is the point where fluid velocity is reduced to zero and stagnation pressure is the pressure measured by the meter true or false
Is calculation of flow rate part?

A

Continuity equations fluids flow is a mathematicla expression of the principle of conservation of mass and it states that for a steady flow the mass flow rate into the volume must equal the mass flow rate out

Mass flow rate is the movement of mass per unit time (kg/s) = density(kg/m to the power 3) x velocity (m/s) x area (m squared)

Volume flow rate = vA
v-flow velocity m/s
Area- msquared
Consider two sections of a flow tube: one section has cross-sectional area A1 and the other has area A2
If the speed of fluid is v1 in section 1 and v2 in section 2, conservation of mass requires
density 1 x v1 x A1= density 2x v2 x A2
For an incompressible fluid, density is constant so A1v1=A2v2

Area of a rectangle : width x height
Area of a sphere: 4 pi r squared
Area of a cube: 6xsquared

The equation Applies to steady flow of an inviscid, incompressible fluid
It is used to compare the flow at at two different locations or points . So if used to compare the flow of a fluid at two different locations in a pipe the equation is P (pressure) 1+ 1/2density x velocity squared) 1 + densitygh1= P (pressure) 2 + 1/2density x velocity squared) 2+ densitygh2
Since there’s no significant change in elevation between point 1 and point 2 ,the potential energy terms cancel each other out thus making the equation now look like this :

P (pressure) 1+ 1/2density multiplied by velocity squared) 1 = P (pressure)2 + 1/2density multiplied by velocity squared) 2 or P1-P2=density /2 multiplied by ( V squared 2 - V squared 1 )
Since the fluid is incompressible,the mass flow rate at point 1 and 2 is equal obeying the continuity equation

This principle is only applicable for isentropic flows (when the effects of irreversible processes such as turbulence and non adiabatic processes such as heat radiation are small and can be neglected
An increase in the speed of a fluid occurs simultaneously with a decrease in static pressure of a decrease in the fluids potential energy or for horizontal flow,pressure decreases when flow speed or velocity increases.
The energy required to increase velocity comes at the expense of the pressure energy
It is derived from the principle of conservation of energy. This states that in a steady flow the sum of all forms of energy (pressure energy,kinetic energy,potential energy) in a fluid along a streamline is the same or constant at all points on that streamline.
It can only be applied on a streamline body.

P (pressure) + 1/2density x velocity squared) + p(density)g(acceleration due to gravity)h(height or elevation of a fluid just above its reference level)= constant
This equation states that the sum of the three terms remain constant along a streamline body
The first term is static pressure which is the pressure p of the fluid
The second term is dynamic pressure which represents the fluid kinetic energy per unit volume
The last term is the hydrostatic pressure which is the pressure exerted by the fluid due to gravity

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
9
Q

Solve this question pressure is 200kPa at point 1.Find the pressure at point 2 when an inviscid,incompressible fluid of density 800kg/m cube flows at a rate of 0.03mto the power 3/s

What is speed of efflux and Torricellis theorem?
An open tank with cross section A subscript t contains fluid of density to a depth (h) above a small hole of area A subscript h . Because the top is open,it is open to the atmosphere.
Solve this question
A sealed storage tank contains water to a height of 25m
The air above the water inside the tank has a gauge pressure of 4.5atm. How fast will water flow out of a hole that is located at the bottom the tank?
Use the organic chemistry tutor to solve this question

A

Using Bernoullis principle:

P (pressure) 1+ 1/2density multiplied by velocity squared) 1 = P (pressure)2 + 1/2density multiplied by velocity squared) 2 or P1-P2=density /2 multiplied by ( V squared 2 - V squared 1 )

Removing the potential energy equation, it’ll now be

P (pressure) 1+ 1/2density multiplied by velocity squared) 1 = P (pressure)2 + 1/2density multiplied by velocity squared) 2 or P1-P2=density /2 multiplied by ( V squared 2 - V squared 1 )

= 200 x 10 to the power 3Pa + 1/2 x 800kg/m cube
Look at the slide with this example on it

vefflux = square root of 2gh
h is the distance between the water level in the tank and the level where the water leaves
This formula only works if the tank is open to the atmosphere

You can also use Bernoullis principle to get the Toricellis theorem

Gauge pressure is the pressure relative to the atmospheric pressure since the atmospheric pressure at seal level is 1atm. The absolute pressure will be 4.5 higher than the atmospheric pressure so the absolute pressure inside the tank is 5.5atm
When the water leaves the tank it’s exposed to an atmospheric pressure of 1atm

Using Bernoullis principle:
P1 + densitygh1 + 1/2densityvsquared1 =P2 + densitygh2 +1/2densityvsquared2

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
10
Q

Under thermodynamics State the equation of state of an ideal gas

A

Some Ideal Gas Properties
•Effusion rate of the same gas at different temperatures
rA(T1)/rA(T2)=
Effusion rate of the different gases at the same temperature
rA/rB=square root of mB/mA

pV=nRT=NkBsubscript T

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
11
Q

What is isolated,closed,open systems

States of systems are characterized by what

A

Isolated systems do not exchange matter or energy with their surroundings and are bounded by rigid walls
Closed systems cannot exchange matter
Open systems can exchange energy or matter with their surroundings
States of a system are characterized by definite values of certain quantities; for example, volume, temperature, pressure
Processes:
Cyclic: system returns to initial state
Isochoric: constant volume
Isobaric: constant pressure
Adiabatic: no heat exchange
Isothermal: constant temperature

The internal energy U of systems is a function of the state of the system
It may depend on volume ,number of particles and temperature
U Changes in a Chnage of thermodynamic state
Delta U=0 in a cyclic process

The first law (fixed number of particles):change in internal energy is heat absorbed minus work done by the system
dU=dQ-dW
-heat absorbed is positive (increases U)

Work done when volume chnages is dW=PdV(system works when it expands ) so dU=dQ-PdV
Work and heat are not functions of state :they depend on path

For ideal gas:PV=nRT so W=differentiation sign of PdV = differentiation sign of nRT/V multiplied by dV

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
12
Q

Name some ideal gas properties

Determine the work in the following cyclic process when traversed in both directions

A

For a gas at temperature T rms speed is proportional to square root of T/M
Recall average molecular velocity is zero(no net translation) but average speed is not zero
Average speed is proportional to rms speed
Justification of Grahams law:
Effusion rate r is proportional to speed hence inversely proportional to square root of mass

pV=nRT=NkBT
vrms =square root of 3kBT/m
vavg=square root of 8kBT/pi m

Effusion rate of the same gas at different temperatures:rA(T1)/rA(T2)= square root of T1/T2

Effusion rate of the different gases at the same temperature=
rA/rB= square root of mB/mA

The triangle is ABC
WABCA = (PB – PA)(VC – VA)/2

WACBA = (PB – PA)(VA – VC)/2 = – WABCA

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
13
Q

What is the second law of thermodynamics
How can it be stated
What does the second law determine
1.Determine the entropy change when 1 kg of ice melts at 0 ℃. Specific latent heat of ice is 3.34×105 J/kg.
2.Determine the thermal efficiency of a Carnot engine operating between 50 ℃ and 200 ℃.

A

“It is impossible for any system to “It is impossible for any system to undergo a process in which it absorbs heat from a reservoir at a single temperature and converts the heat completely into mechanical work, with the system ending in the same state in which it began.” a process in which it absorbs heat from a reservoir at a single temperature and converts the heat completely into mechanical work, with the system ending in the same state in which it began.”

The second law can also be stated as dS greater than or equal to zero
In any process,entropy either increases or stays constant
Heat is related to entropy through TdS is greater than or equal to dQ
Entropy is a function of state but heat is not
For a reversible process ,TdS=dQ

The second law determines which processes can occur spontaneously
It also determines the efficiencies of engines
The most efficient engine (Carnot) operating between reservoirs at T subscript H and T subscript C has efficiency
n= T subscript H — T subscript C divided by subscript H
This is = 1 - T subscript C divided by T subscript H

Answers :

  1. Delta S = Q/T = 1223 J/K
  2. n = 1 – TC/TH = 32%
How well did you know this?
1
Not at all
2
3
4
5
Perfectly
14
Q

Explain circular motion
Velocity is always tangential to path true or false
For rectilinear motion,a is parallel to v and can be zero while for circular motion,a has a radial component and is non zero

A

Circular motion, that is, motion on a circular path, is a special case of motion on a curved path. Circular motion differs from rectilinear motion in the following respects. In rectilinear motion, acceleration is parallel or anti-parallel to velocity and can be zero as in uniform motion (that is, motion with constant velocity–constant speed and constant direction). In circular motion, acceleration is never zero, even when speed is constant, and there is always a component of acceleration perpendicular to the direction of motion; therefore, acceleration is never parallel to velocity in circular motion.

In the figure at left showing rectilinear motion, the velocity vector remains parallel to itself at all instants—direction is constant. In the case of circular motion as in the figure at right showing motion on a circle of radius R, the direction of motion is different at different instants. Acceleration is the rate of change of velocity: any change in velocity, whether in magnitude or direction or both, is brought about by acceleration. Therefore, since the direction of motion must change in such a manner that a circle is described, circular motion always involves acceleration.

In any type of motion, rectilinear, circular, or curvilinear, instantaneous velocity is tangential to path. To change the direction of curvilinear motion of a body, it must be accelerated in a direction perpendicular to its instantaneous velocity. Acceleration in circular motion therefore always has a component perpendicular to velocity.

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
15
Q

State the types of circular motion
What is centripetal acceleration
For uniform circular motion there is constant speed,zero tangential acceleration and for non uniform motion there is non zero speed and tangential acceleration
How is uniform circular motion described
What is period
What is frequency
What is angular velocity
How can speed and centripetal acceleration be expressed

A

Two types of circular motion can be distinguished: uniform and non-uniform circular motion. A body in uniform circular motion moves with constant speed but in a direction that varies around the circle. In the non-uniform case, speed is not constant.

Note that, acceleration can be resolved into components parallel and perpendicular to instantaneous velocity. Changes in speed are brought about by the parallel (tangential) component atan whereas changes in direction are brought about by the perpendicular (radial) component arad (Young and Freedman, Section 3.2). Speed increases when tangential acceleration is in the same direction as velocity and decreases when the directions are opposite.

Radial acceleration is known as centripetal acceleration and is always directed towards the centre of the circle. (Centripetal comes from Greek and means “seeking the centre.”) In the resolution of the acceleration given above, the radial unit vector points away from the centre of the circle; therefore, the centripetal term must carry a negative sign so it points to the centre. The magnitude of acceleration is naturally the square root of the sum of squares of the radial and tangential components.

From the forgoing, it is clear that in uniform circular motion, tangential acceleration is zero whereas it is non-zero in non-uniform circular motion.

There are two types of circular motion: uniform and non-uniform
Resolve acceleration into tangential (atan) and radial (arad) components

Tangential accel. changes speed
Radial accel. changes direction (- sign implies toward O)
Uniform circular motion: atan = 0 hence constant speed E.g.
Vehicle rounding a constant-radius curve at constant speed
Satellite in circular orbit
Non-uniform circular motion: atan ≠ 0 E.g.
Skater on a vertical circular track
In general, magnitude of acceleration is
Square root of a squared subscript tan + a squared subscript rad
arad = v squared/R

In describing uniform circular motion, it is useful to introduce period, frequency, and angular velocity. The period T is the time for a complete trip around the circle. For example, if ten revolutions are completed in 1 s, the period is T = 1 s/10 = 0.1 s.

Frequency is the number of complete cycles in unit time: f = 1/T. The angular frequency w = 2pf is the magnitude of the angular velocity. It is given in units of radians per second. Angular velocity w is a vector directed perpendicular to the plane of the circle and oriented in such manner that if the fingers of the right hand are curled around the circle in the direction of motion, the thumb points in the direction of w.

Speed and centripetal acceleration can be expressed in terms of angular speed by noting that distance travelled in one trip around the circle is 2pR, the circumference of the circle. Speed and centripetal acceleration are then given by the expressions shown on the slide.

Note that the expression for centripetal acceleration also applies to any curvilinear motion, including non-uniform circular motion. At any point on the path of a body where the instantaneous speed is v and the local radius of curvature of the path is R, there is a component of acceleration perpendicular to the direction of motion, directed towards the centre of curvature of magnitude
arad = v2/R.

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
16
Q

What is period,frequency

Angular frequency under circular motion

A

Time for one complete revolution is the period T
The number of revolutions in unit time is frequency f = 1/T
The angular frequency w = 2pf =2p/T
w is also called angular speed (unit: radians per second)
Angular velocity is a vector pointing perpendicular to the plane of the circle, in a right-handed sense
In one revolution, distance travelled is the circumference 2pR of the circle
Speed v = 2pR/T = 2pRf = Rw
Centripetal acceleration arad = v2/R = Rw2 = 4p2R/T2 = 4pi2f2R
arad= v squared /R also gives radial acceleration when speed is v at a point of radius R on any curvilinear path

How well did you know this?
1
Not at all
2
3
4
5
Perfectly
17
Q

A particle moves in a circular orbit of radius 2 m with constant orbital speed 4 m s-1. Determine the
acceleration
period and
angular frequency of the motion.

A

Since orbital speed is constant, acceleration is radial: arad = v2/R = (42/2) m s-2 = 8 m s-2.
The period is T = 2πR/v = 3.14 s.
The angular frequency is ω = 2 π /T = 2 rad s-1.
Note that frequency can also be expressed as number of revolutions in unit time (usually 1 minute). In this example, f = 0.318s-1 can be given as 19.08rpm. angular frequency ( w) = 2p RPM/60

18
Q

When a ball moves in a vertical circle,it’s net acceleration is not purely radial
What is Newton’s second law

A

Newton’s Second LawFtan =mgsintheta =matan
Conservation of energy
Work done by tension is zero because it is perpendicular to displacement
E = Gravitational P.E. + K.E. is conserved

In conclusion,v= square root of 2E/m -2gR(1-costheta)

Consider a ball moving in a vertical circle. The ball, of mass m is at the end of a length of string such that the centre of mass of the ball moves in a circle of radius R. Circular motion is non-uniform in this case as the tangential component of the weight of the ball is not zero everywhere around the circle. If the angular displacement relative to the vertical is q, the tangential component of weight is mg sin(q). The string remains radial throughout the motion; therefore, the tangential component of the string tension is zero.

The free-body diagram shows the forces acting on the ball, namely, string tension T and weight w = mg. Resolve these forces in the radial and tangential directions. The radial components give SFrad = T – mg cos(q) = mv2/R whereas the tangential result is SFtan = mg sin(q) = matan. We now invoke conservation of energy. Because the tension is everywhere perpendicular to the path, the work done by T is zero: T.ds = Tds cos 90o = 0. Total energy E, comprising kinetic energy and gravitational potential energy, is conserved if dissipative forces (drag, for example) can be neglected. We chose the lowest point of the circle as potential energy reference. If the angular displacement is q, the height of the ball above the reference point is R(1 – cos q) and P.E. = mgh = mgR(1 – cos q). We invert the total energy expression E = K.E. + P.E. = ½mv2 + mgR(1 – cos q) to obtain centripetal acceleration arad = v2/R = 2E/mR – 2g(1 – cos q) and speed v = √[2E/mR – 2g(1 – cos q)].

It is seen that speed depends on angular position. The motion is non-uniform as advertised. The tangential acceleration is atan = Ftan/m = g sin(q). Kim

19
Q

The motion of the ball depends on the total energy E. If E < 2mgr, there is a point on the path where speed is zero. At that point, cos qmax = 1- E/(mgr) or qmax = ±cos-1[1-E/(mgR)]. The ball swings to-and-fro between the extreme angles qmax and the motion is that of a simple pendulum.

If E = 2mgr, the ball comes to rest at the top of the circle (q = 180o) because speed is zero there. If instead of a flexible string the ball is at the end of a light rigid rod, the ball will remain indefinitely at the top of the circle.

In a third and final case, E > 2mgr and speed is never zero anywhere on the path. The ball rotates indefinitely, as long as no dissipative forces act on it. The speed of the ball is maximum at the bottom of the circle and minimum at the top
For a vertical circle
True or false

Your cousin Throckmorton skateboards down a curved playground ramp. If we treat Throcky and his skateboard as a particle, he moves through a quarter-circle with radius R = 3.00 m (Fig. 7.9). The total mass of Throcky and his skateboard is 25.0 kg. He starts from rest and there is no friction. (a) Find his speed at the bottom of the ramp. (b) Find the normal force that acts on him at the bottom of the curve.

A

True

At top total energy E = mgR
At bottom
v = √(2E/m) = √(2gR) = 7.67 m s-1
Frad = n – w = mv2/Rn = mv2/R + w = m(2gR)/R + w = 2mg + mg = 735 N

20
Q

What are paramagnetic matierials,diamagnetic materials ,ferromagnetic materials

What are the characteristics of diamagnetism
I’m which materials is diamagnetism usually displayed
Magnetization in a diamagnetic material is due to what law?
What is the result of this?

A

Experimental observations:
For some materials atomic dipoles align with the magnetizing field B0
These are paramagnetic materials and they have a small positive susceptibility
For other materials atomic dipoles align against B0
These are diamagnetic materials and they have a very small negative susceptibility
For still other materials, the atomic dipoles align even in the absence of a magnetizing field B0
These are ferromagnetic materials and they can have large positive susceptibilities
Ferromagnetic materials usually exhibit nonlinear properties: permeability depends on magnetizing field and on history of the material
However, above a characteristic temperature (Curie temperature), ferromagnetic materials lose their ferromagnetic properties and become paramagnetic

Diamagnetism is actually displayed by all materials
Because it is weaker, diamagnetism is masked when paramagnetism is present (paramagnetism is usually much stronger)
Diamagnetism is characterized by a very small magnetization in a direction opposite to that of the magnetizing field
Diamagnetic susceptibility is small and negative, cm ~ -10-5
A diamagnetic material is weakly repelled by a strong magnetizing field
The magnetic field in the material is therefore weaker than the magnetizing field
Superconductors (zero resistance materials) are perfect diamagnetic materials: cm = -1 and the field in the superconductor is zero
The diamagnetic susceptibility is independent of temperature

Magnetization in a diamagnetic material arises as a consequence of Lenz’s law
When the magnetizing field is switched on, an electric field is induced which opposes the change the field causes (Lenz’s law)
Note that the changing magnetic field induces an emf which can do work; in contrast a static magnetic field can do no work
The induced electric field changes the speed of the electron slightly
The change in orbital speed gives rise to a change in the magnetic moment in a direction opposite to that of the magnetizing field
The result is a macroscopic magnetization opposite to the magnetizing field

21
Q

What materials exhibit paramagnetism

What are its characteristics?

A

Paramagnetism is exhibited by atoms with unfilled shells
Such shells contain an odd number of electrons and have unpaired spins
They are characterized by a permanent magnetic dipole moment
The dipole moments are independent  no interaction exists between them
Examples are transition elements and rare earths: all have unfilled inner sub-shells so there is hardly any interaction between the magnetic dipole moments in an aggregate of such atoms

Paramagnetism is characterized by a small magnetization in the same direction as that of a magnetizing field
Paramagnetic susceptibility is small and positive, cm ~ 10-4
Paramagnetic susceptibility is temperature dependent: for weak magnetizing fields Curie’s law holds cm = C/T where C is Curie’s constant and T is absolute (Kelvin) temperature
A paramagnetic material is weakly attracted by a strong magnetizing field
The magnetic field in the material is therefore slightly stronger than the magnetizing field

22
Q

What materials exhibit ferromagnetism

What are its characteristics?

A

Ferromagnetism is possible in materials in which the elementary dipoles are not independent but interact strongly
Strong interaction between spins can result in
alignment of dipoles  ferromagnetic
anti-alignment of dipoles  anti-ferromagnetic
more dipoles aligned than anti-aligned  ferrimagnetic
The spin interactions that lead to ferromagnetism is quantum mechanical in origin and is related to the Pauli Exclusion Principle
A special kind of quantum mechanical force, the exchange force, acts between spins

Ferromagnetism is exhibited by materials with permanent magnetic dipole moments: in ferromagnetics, there is strong interaction between the permanent moments
Ferromagnetism has been observed in iron, cobalt, nickel, gadolinium, and dysprosium
Ferromagnetic materials are characterized by spontaneous magnetization of small regions of the material even in zero external magnetic field: such regions are known as magnetic domains
Within each domain, strong interactions between spin moments exist and the moments are aligned in a common direction: the domain is uniformly magnetized
In the absence of an external field and previous magnetization, the domains are oriented in a manner as to reduce the overall magnetic energy of the material: the material as a whole may have zero magnetization even though it is made up of domains of saturated magnetization
Magnetization in ferromagnetic materials is temperature dependent
Ferromagnetic behaviour is exhibited when the interaction between the elementary magnetic dipoles is much stronger than the depolarizing effect of random thermal motion
Above a critical temperature TC, the Curie temperature, ferromagnetic materials become paramagnetic
Above the Curie temperature, the magnetic susceptibility obeys a modified Curie’s law, known as Curie-Weiss Law: cm = C/(T-TC)

23
Q

Explain how magnetization depends on temperature
Explain hysteresis loops
What’s the use of hysteresis loop
What us the difference between hard magnets and soft magnets
What materials are good for permanent magnets?
Which are good for computer memory materials?
Which are good for transformers and other alternating current devices

A

Tc is the Curie temperature
If temperature is Below Tc the magnetic material is ferromagnetic
(Complicated temperature dependence includes saturation at low temperatures)
If Temperature is Above Tc the magnetic material is paramagnetic
(Magnetization =C/(T-Tc)
Above Tc the paramagnetic susceptibility obeys a modified Curies law which is Magnetization =C/(T-Tc)

The hysteresis loop shows the relationship between the magnetic flux density and the magnetizing field strength. The loop is generated by measuring the magnetic flux coming out from the ferromagnetic substance while changing the external magnetizing field.

Hysteresis is the common property of ferromagnetic substances. Generally, when the magnetization of ferromagnetic materials lags behind the magnetic field this effect can be described as the hysteresis effect.

Hysteresis is characterized as a lag of magnetic flux density (B) behind the magnetic field strength (H).

Soft Magnetic Materials Hard Magnetic Materials
3 soft:They have low coercivity hard:They have high coercivity
4 soft:They have high initial permeability
Hard:They have low initial permeability
5 soft:Hysteresis loss is less
Hard:Hysteresis loss is higher

Materials that are hard to demagnetize are good for permanent magnets
Materials that magnetize and demagnetize easily are good for computer memory materials
Materials where zero hysteresis will be optimal are good for transformers and other alternating current devices

24
Q

Electrons in solids exist in energy bands corresponding to allowed states
Energy bands are separated by energy gaps or band gaps
In insulators, all allowed energy states are completely filled or completely empty
Conductors have partially filled bands
Semiconductors have slightly filled bands
True or false
How do energy bands arise?
What are the types of energy bands

https://electronicscoach.com/difference-between-conductor-insulator-and-semiconductor.html

A

For a large collection of atoms, the energy levels would be the same as in isolated atoms if the atoms were so far apart that no interaction existed between them
As atoms are brought together as in a solid, interactions result in a splitting of the energy levels into many closely spaced sublevels
The sublevels are so closely spaced that they can be considered as nearly continuous
In this way, electrons in the solid also obey the Exclusion Principle

Energy bands : In a solid , the energy of electrons lie within certain range. The energy levels of allowed energy are in the form of bands, these bands are separated by regions of forbidden energy called band gaps.
Distinguish features :

(a) In conductors : valence band and conduction band overlap each other.
In semiconductors : Valence band and conduction band are separated by a small energy gap.
In insulators : They are separated by a large energy gap.
(b) In conductors : Large number of free electrons are available in conduction band.
In semiconductor : A very small number of electrons are available for electrical conduction.
In insulators : Conduction band is almost empty i.e., no electron is available for conduction.

Based on the energy band theory, there are three different energy bands:
Valence band.
Forbidden energy gap.
Conduction band.

The major difference between conductor, insulator and semiconductor is defined by the flow of charged particles under the influence of electric field. When any voltage is applied to the conductor, electric charged particles easily flow from valence band to conduction band. Thus conductor is a good conductor of electricity. A semiconductor allows very low charge particles to move from valence band to conduction band. In insulators, there is no flow of charge particles under the influence of electric field hence insulators are the bad conductor of electricity.

Example o condictors: Copper, Mercury, Silver, Al, Water, Acids, Human Body, Metallic Salt, Charcoal
Example of insulators : Wood, Rubber, Glass, Ebonite, Mica, Sulphur, Dry air.
(Conduction band and valence band are separated by 6eV.)
Example of semi conductors:
Germanium, Silicon, Cotton, Wool, Marble, Sand, Paper, Ivory, Moist air.
(Conduction band and valence band separated by 1eV.)

25
Q

Why is silicon an important semiconductor

Only electrons actually move

A

Silicon is a (very important) semiconductor
Si has 4 electrons in its outermost shell
These are the electrons that participate in bonding  valence electrons
In a solid silicon sample, atoms are arranged in a periodic lattice  crystal = lattice + atoms at lattice points
The four valence electrons of each Si atom form covalent bonds with four other atoms
The energy band corresponding to these valence electrons (valence band) is completely filled at absolute zero
The conduction band is about 1.12 eV above the valence band and is completely empty at absolute zero; i.e., energy gap Eg = 1.12 eV
Therefore, Si behaves as an insulator at absolute zero
At room temperature, a few electrons gain sufficient thermal energy to jump the gap into the conduction band where they can carry a current
The electrons in the conduction band leave behind vacancies in the valence band
Valence band electrons can move into the vacancies; when this happens, the vacancies propagate through the crystal opposite to the valence band electron motion
The mobile vacancies are called holes
Holes behave as positive charge carriers

26
Q

Explain the types of semi condictors

A

A pure semiconductor (no impurities) is called intrinsic
In a pure semiconductor, the concentration of electrons and holes are the same: ni = pi
This is because the holes in the valence band originate from vacancies left behind by electrons in the conduction band
Intrinsic carrier concentration (electrons in conduction band or holes in the valence band) depends on temperature
Therefore at absolute zero, T = 0 and ni =pi = 0 At absolute zero, the intrinsic semiconductor has no mobile carriers: it is an insulator

Extrinsic:
By controlled introduction of impurities into a semiconductor, carrier concentration may be modified
The process of controlled introduction of impurities into semiconductors is known as doping; the resulting material is an extrinsic semiconductor
Certain impurities increase the concentration of electrons  such impurities are known as donors and the resulting material is called n-type
In n-type semiconductors, majority carriers are electrons; minority carriers are holes
For example, phosphorous and arsenic are donors for silicon: a very small amount of P or As in Si dramatically increases the electron concentration
Since these electrons do not originate from the valence band, there is no corresponding increase in hole concentration; so electrons become majority and holes minority carriers
Other impurities increase the concentration of holes  such impurities are known as acceptors and the resulting material is called p-type
In p-type semiconductors, majority carriers are holes and minority carriers are electrons
For example, boron is an acceptor for silicon: a very small amount of B in Si dramatically increases hole concentration in Si; the electron concentration is small in comparison
In either n-type or p-type materials, the product of electron concentration n and hole concentration p equals the square of the intrinsic carrier concentration ni
They are non degenerate or lightly doped
According to the law of mass action:
np=ni squared

Note: p-type and n-type materials are electrically neutral;
The designation only refers to majority carrier type

27
Q

What is a compensated semi conductor

The intrinsic carrier concentration of a semiconductor at room temperature is 1.5 × 1015 m-3. Estimate the hole concentration in an n-type sample with electron concentration 1.08 × 1024 m-3.

A

The conductivity of a lightly-doped extrinsic semiconductor can be reduced close to the intrinsic conductivity by introducing dopants of the opposite type
For example n-type silicon can be made intrinsic by introducing the correct amount of boron
The resulting intrinsic semiconductor is known as compensated
If the concentration of the opposite dopant type is increased beyond what is needed for compensation, the conductivity type is reversed

Solution:
p = ni2/n = (1.5 × 1015 m-3)2 /1.08 × 1024 m-3 = 2.08 × 106 m-3

For an extrinsic semiconductor, the total carrier density n + p is greater than the total intrinsic carrier density  extrinsic materials are better conductors;
They are useful because the conductivity can be controlled by various means: electrical, electromagnetic etc.

28
Q

How do semiconductor devices or photoconductive cells work
Note: If hn ≥ 2Eg then 2 electron-hole pairs can be generated; if hn ≥ mEg then m electron-hole pairs can be generated, m an integer.
True or false

A

When electromagnetic radiation falls on a piece of semiconductor material, electron-hole pairs are generated if the energy of the radiation is greater than the band gap of the material
Electromagnetic radiation is quantized
It comes in discrete packets of definite energy
The packets are known as photons
Radiation of frequency n has photon energy hn
h = 6.626 × 10-34 J s is Planck’s constant
So an electron-hole pair is generated if hn ≥ Eg
The photo-generated carriers change the electrical resistance of the semiconductor
The electrical current in the circuit below is a measure of the intensity of light incident on the semiconductor
The incident intensity is proportional to the number of photons per second falling on the device
If the light intensity is Iph (in watts per square meter) and the area illuminated is A (in square meters), optical power is Pi = IphA and photon rate is IphA/hn
If each photon generates an electron-hole pair, then the current is proportional to the photon rate and hence to the intensity of light
In practice, only a fraction of the photons succeed to generate electron-hole pairs

29
Q

What is a pn junction and how does it work as a Semi conductor device
How are they made?
How are p type and n type semiconductors formed

A

When a p-type and an n-type semiconductor are brought into intimate contact, a pn junction is created
Initially there is a higher concentration of holes on the p side of junction; there is also a higher concentration of electrons on the n side
Electrons (majority) on the n side begin to diffuse into the p-type material, leaving behind uncompensated donors; simultaneously, holes (majority) on the p side diffuse from the p-type into the n-type material, leaving behind uncompensated acceptors
After crossing the junction, electrons can recombine with holes on the p side; holes can also recombine with electrons on the n side
The diffusion of carriers across the junction quickly halts for two reasons: (1) the concentration gradient that drives the diffusion decreases near the metallurgical junction; (2) the uncompensated charges near the junction set up an electric field that opposes the diffusion
The result is a depletion region near the junction where there are very few carriers: the depletion layer is highly resistive
Because of this depletion region, the pn junction behaves as a capacitor
The junction capacitance is voltage dependent—this property is very useful in such devices as voltage-controlled capacitors (varactors); these can be used in tunable oscillators

In addition to the diffusion of majority carriers across the junction, there is a drift of minority carriers
Electrons (minority) on the p side drift across the junction, aided by the field created by the uncompensated impurities in the depletion layer
Holes (minority) on the n side drift across the junction, also aided by the field created by the uncompensated impurities in the depletion layer

pn junctions are frequently made with single crystals—the junction can be created in
various ways (e.g. by diffusing opposite impurities into a doped crystal or growing opposite
conductivity type layer on a doped crystal)

The conductivity of the semiconductor is improved by a process called doping. Doping is the method of adding impurities to the semiconductor material. Depending on the type of impurities added, the semiconductor will become p-type or n-type.

In the semiconductor the junction is a metallurgical junction

The semiconductors in which the impurities are not added are called pure or intrinsic semiconductors and the semiconductors with impurities are called extrinsic semiconductors

The p-type semiconductor is formed by adding trivalent impurities like aluminium, boron or indium to the intrinsic semiconductor. The majority charges are the holes in p-type semiconductors. In an n-type semiconductor, the pentavalent impurities like arsenic, antimony or phosphorus are used as impurities. In n-type semiconductors, the electrons are the majority charge carriers.

30
Q

Explain the depletion layer
What creates the built in field?
The minority carrier motion contains what?
The majority carrier motion contains what?

A

The depletion region is also known as space-charge region

depletion region is the layer where the flow of charges decreases. This region acts as the barrier that opposes the flow of electrons from the n-side to the p-side of the semiconductor diode.

Uncompensated Impurities create the built in field,E

When the p-type and the n-type materials are kept in contact with each other, the junction between them behaves differently from either side of the material alone. The electrons and holes are close to each other at the junction. According to coulomb’s law, there is a force between the negative electrons and the positive holes. When the p-n junction is formed a few electrons from the n-type diffuse through the junction and combines with the holes in the p-side to form negative ions and leaves behind positive ions in the n-side. This results in the formation of the depletion layer, which acts as the barrier and does not allow any further flow of electrons from the n region to the p region.

Minority-electron drift
Hole drift

Majority-electron diffusion
Hole diffusion
In the semiconductor the junction is a metallurgical junction

31
Q

For a pn junction under bias , The electric field of the uncompensated charges in the depletion layer corresponds to?
What does it represent?
What happens when the p side is connected to the positive terminal of the source?
What happens when the p side is connected to the negative terminal of the source
What forms the basis of operation of semi conductor diodes

A

The electric field of the uncompensated charges in the depletion layer corresponds to a potential difference V0 across the junction
This potential difference represents an energy barrier preventing the flow of majority carriers
Minority carriers are not impeded
When an external voltage V is applied across the depletion region, the barrier is either raised or lowered
If the p side is connected to the positive terminal of the source, the barrier is lowered to (V0-|V|): the junction is forward biased and majority carriers can more easily flow between the terminals
If the p side is connected to the negative terminal of the source, the barrier is raised to (V0+|V|): the junction is reverse biased and majority carrier conduction is further impeded
This behavior of the pn junction represents rectification and forms the basis of operation of semiconductor diodes

32
Q

Explain reverse bias and the phenomenon that can happen during reverse bias
What is a diode?
Which law doesn’t it obey?

A

When the reverse bias on a pn junction diode is increased, the reverse current (also called leakage current) eventually saturates at Is
High reverse bias in real diodes leads to significant conduction, much greater than predicted by the ideal diode equation
Under high reverse bias voltages, two phenomena can occur
Avalanche breakdown: minority carriers accelerated by the built-in field gain sufficient energy to generate electron-hole pairs by impact ionization; these new carriers also gain energy in the field and generate others in a cascade that leads to a high reverse current
Zener breakdown: A high reverse bias shifts the valence band on the p side relative the conduction band on the n side of highly doped pn junctions in such a manner that charge carriers can tunnel directly across the junction
The minimum reverse voltage for zener breakdown can be controlled by doping
In that manner, zener diodes with desirable breakdown voltage can be created—these are used in voltage regulators

A diode is a highly nonlinear device—it does not obey Ohm’s law
If the voltage is known, the current is calculated using the diode equation
The ideal diode equation does not describe reverse breakdown, however

33
Q

State four applications of a pn junction

Silicon has a band gap of 1.1 eV. Determine the longest wavelength that a silicon photodiode can detect.

A

Diode rectifier
Photodiode
Solar cell
Light-emitting diode
Laser diode
Junction transistors:
-Bipolar junction transistor
-Junction field effect transistor

pn juntions appear in
many other devices,
including:
Silicon-controlled rectifier
Thyristor
MOSFET terminals

Solution:

Wavelength max = hc/Eg = 6.626×10-34 Js × 2.998 × 108 ms-1 / (1.1 eV×1.602×10-19J/eV) = 1.13 mmThis shows that a silicon photocell cannot be used for detection of near infrared and longer wavelength radiation (l > 1.5 mm).

34
Q

Explain bipolar junction transistor
Know the symbols of pnp and npn bipolar junction transistor
Why is npn preferred over pnp

Transistor can be used as an amplifier (enlarged copy of the current or voltage) or a switch (controlled by base-voltage).
Consider emitter-base Junction is forward-biased and Collector-base junction is reverse biased.
True or false

A

Bipolar junction transistors are made by sandwiching a thin lightly-doped n-type material between two p-type (pnp) or a thin lightly-doped p-type material between two n-type (npn)
A bipolar junction transistor (BJT) therefore has two pn junctions and is a three-terminal device
The thin, lightly-doped layer in the middle is the base; the other two terminals are called emitter and collector
There are two types: npn and pnp; the middle letter refers to the base conductivity type
So for both types,it’s always emitter,base,collector but the
In operation voltages are applied to the BJT terminals in such a manner that the pn junction between the base and emitter is forward biased whereas the junction between the base and the collector is reverse biased
Majority carriers then flow from the emitter to the base region—there they are minority carriers
For example, consider a properly biased npn transistor: the current in the forward biased emitter-base junction injects electrons from the emitter into the base; in the base the electrons are minority carriers
The carriers injected into the base can recombine with majority carriers there
The base is lightly doped and thin to reduce recombination
Or they can be conducted out of the base terminal thereby causing a base current
Or, particularly if the base is very thin, the injected carriers can be swept by the electric field of the depletion layer at the base-collector junction to the collector, creating a collector current
The collector current is proportional to the base current and can be much larger depending on the characteristics of the transistor

NPN transistor consists of a p-region between two n-regions and a PNP transistor consists of a n-region between two p-regions.

NPN transistors perform better than the PNP transistors. The reason is that current in the npn transistor is due to electrons while in the PNP transistors, it is due to holes. As the mobility of electrons is more than the hole, the current is higher in the NPN transistor as compared to the PNP transistors. Hence, NPN transistors are usually preferred over PNP transistors.

Emitter is a segment on one side of transistor of moderate size and heavily doped (to increase the current). It supplies a large number of majority charge carriers.
Base is the central segment of thin size and is lightly doped (to reduce recombination).
Collector is largest in size and moderately doped at one end of the transistor. It collects a majority of majority charge carriers.

35
Q

How does BJT current gain occur
Biased transistor: in the configura-tion shown, the emitter is commonto the input and output terminals
so the configuration is called
“common emitter”
True or false

A

Vbe ensures the emitter-base junction is forward biased
This causes a base current Ib to flow through the base resistor Rb to the emitter

Vce ensures the collector-base junction is reverse biased
The collector current Ic is proportional to the base current Ib

The proportionality constant b is the current gain of the transistor and can vary over a wide range for different transistors, say from 10 to >100

Current gain=
Ic=BetaIb

36
Q

Explain transistor amplifiers:common emitters

A transistor with current gain beta= 11 and emitter-base resistance rbe = 10 W is used in a common-emitter amplifier. The base resistor is 100 W and the load is 50 kW. Estimate the voltage gain.
Load current
Load voltage
Voltage gain

A

A small signal vs is connected in series with the base resistor
This causes a small signal current ib to flow in addition to the base bias current Ib
Vbe must be chosen so that the emitter-base junction remains forward biased for all signal voltages vs
Similarly, the collector bias current Ic must be selected so that the collector-base junction remains reverse biased
The signal portion ic of the collector current is also proportional to the signal portion of the base current: ic = bib
Note this current is also the load current
The transistor is a complicated non-linear device; however, we can understand amplification by assuming that the base-emitter junction is represented by an internal resistance rbe; the calculation at right gives the small-signal voltage gain Av
Solution:
Voltage gain in common-emitter mode is Av=beta x R subscript L / R subscript b + r subscript be

Av=11 x 50,000 ohm/ 100 ohm + 10 ohm
= 5000

37
Q

Explain transistor amplifiers:common base
Load voltage and voltage gain for this kind of transistor amplifiers

A transistor with current gain b = 11 and emitter-base resistance rbe = 10 W is used in a common-base amplifier. The emitter resistor is Re = 100 W and the load is 50 kW. Estimate the voltage gain.

A

In the common base configuration, the base is common to both input and output circuits
As with the common emitter configuration, the base-emitter junction is forward biased whereas the collector-base junction is reverse biased
Collector current is proportional to emitter current
The current gain coefficient in common-base mode nearly equals 1

Current gain:
Ic ~aIe
a=beta / 1+ beta

For many transistors, b&raquo_space; 1 so a ≈ 1

Voltage gain in common-emitter mode is Av=R subscript L / R subscript e + r subscript be

Av=50,000 / 100 + 10
=455

38
Q

Explain logic gates
The input sequences to a two-input NAND gate are 011110 and 110001. Find the output sequence.

Logic gates are an important concept if you are studying electronics. These are important digital devices that are mainly based on the Boolean function. Logic gates are used to carry out logical operations on single or multiple binary inputs and give one binary output. In simple terms, logic gates are the electronic circuits in a digital system.
True or false

https://byjus.com/jee/basic-logic-gates/

A

Logic gates are the basic building blocks of any digital system. It is an electronic circuit having one or more than one input and only one output. The relationship between the input and the output is based on a certain logic. Based on this, logic gates are named as AND gate, OR gate, NOT gate
Know the logic gates symbols

NAND(A,B) = NOT (AB)
= NOT (011110 AND 110001)
=NOT (010000
=101111

39
Q

What are the three types of stress?

A

Stress
Bulk stress
Shear stress

40
Q

Define stress
Young’s modulus and hooked law

A

Certainly! Let’s relate the concepts of stress, bulk stress, and shear stress to the elastic and plastic properties of matter:

  1. Stress:
    • Definition: Stress is a fundamental concept in mechanics that quantifies the internal forces within a material when subjected to external forces or loads.
    • Types:
      • Normal Stress: Acts perpendicular to the surface of the material, causing tension (stretching) or compression (squeezing).
      • Shear Stress: Acts parallel to the surface of the material, causing adjacent layers to slide past each other.
  2. Elastic Properties:
    • Response to Stress: Elastic properties describe how a material responds to stress by undergoing reversible deformation. This means the material returns to its original shape and size once the stress is removed.
    • Hooke’s Law: Describes the linear relationship between stress and strain (deformation) within the elastic limit of a material.
    • Moduli:
      • Young’s Modulus (E): Measures the stiffness of a material under tension or compression (normal stress).
      • Shear Modulus (G): Measures the stiffness of a material under shear stress.
  3. Plastic Properties:
    • Response to Stress: Plastic properties describe how a material responds to stress by undergoing irreversible deformation. Once the stress exceeds the material’s yield point, it undergoes permanent deformation.
    • Yield Stress: The stress at which plastic deformation begins.
    • Ductility: Ability of a material to undergo significant plastic deformation before fracture.
  4. Bulk Stress:
    • Definition: Bulk stress refers to the stress that acts uniformly throughout a material in all directions, such as hydrostatic pressure (equal in all directions).
    • Elastic Behavior: Elastic materials respond to bulk stress by undergoing volume changes that are reversible, as seen in the compression or expansion of a gas under pressure.

How They Fit Together:
- Elastic Response: When a material experiences stress within its elastic limit, it deforms elastically. The relationship between stress and strain (Young’s modulus for normal stress, shear modulus for shear stress) governs how much the material deforms and how it returns to its original shape when the stress is removed.
- Plastic Response: If the stress exceeds the material’s yield point, plastic deformation occurs. This results in permanent changes in shape or size, with the material not returning to its original form once the stress is removed.

In summary, stress (including normal, shear, and bulk stress) is the applied force per unit area within a material. Elastic properties describe how materials deform reversibly under stress, governed by Hooke’s Law and modulus values. Plastic properties describe irreversible deformation beyond the material’s yield point. These concepts collectively explain how materials respond to external forces and loads, influencing their mechanical behavior and applications in engineering and science.