Etching Flashcards

1
Q

Vantagens wet etching

A

Baixo custo
facilmente reproduzivel
excelente seletividade em maior parte dos casos
Alta capacidade de processamento

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2
Q

Desvantagens wet etching

A

Baixa resolução
Risco de exposição a certos químicos
Alto custo de alguns reativos
Perda de adesão do fotoresiste nalguns casos
Possivel formação de bolhas que inibem a erosão
Erosão incompleta ou não uniforme

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3
Q

Cenas random wet etching

A

-usa uma mistura de acidos, bases e agua
-pode ser usado para a erosão de vários materiais
-Alta seletividade mas sensível à contaminação
-Tipicamente isotropico
-Taxas de erosão variadas

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4
Q

Etching em materiais cristalinos

A

-Tipicamente wet etching é isotropico
-no entanto em materiais cristalinos a taxa de etching depende da direção cristalografica.
-Mais lenta para direções mais compactas

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5
Q

Vantagens Dry Etching

A

Evita o uso de quImicos perigosos
Permite perfis iso e anisotropicos
Excelente resolução
Undercut reduzido
Melhor controlo do processo
Automação fácil

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6
Q

Desvantagens Dry etching

A

Alguns gases são corrosivos
necessidade de equipamento especializado

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7
Q

Dry etching sem plasma

A

-Perfil isotropico
-Boa seletividade de materiais para mascaras
controlavel atraves da temperatura e pressão

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8
Q

dry etching com plasma tipos

A

Physical etching(puro bombardeamento)
Plasma etching(plasma assistido por reações químicas)
Reactive ion etching(reações químicas e bombardeamento)

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9
Q

Dry etching-Physical etching(sputtering)

A

– it is based on physical bombardment with ions or atoms
– plasma is used to provide power to a non-reactive ions
– momentum transferred during the collision
– atoms of the substrate are removed when the power of the species exceeds the binding energy
– highly anisotropic
– etching rate of most materials are similar ( low selectivity )
– Argon is usually used
– re-deposition may occur

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10
Q

Dry etching-Plasma etching

A

– Plasma is used to produce chemically reactive species (atoms,
radicals or ions) from inert gas molecules
– Phases:
* Generation of reactive species in the plasma
* Diffusion of the species to the surface
* Adsorption of species
* Chemical reaction with formation of volatile reaction products
* Desorption of the reaction products
* Diffusion of the reaction products into the gas mixture
– Production of gaseous reaction products is very important
– Isotropic etching profil

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11
Q

Dry etching-Reactive Ion etching

A

– chemical etching process is accompanied
by ion bombardment
– Bombing “opens” areas for reactions
– Sputtering:
* There is no “under-cuting” since the lateral walls
are not exposed
– Improved etching rate
– structural degradation
– low selectivity

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