Quiz 1 (02) Flashcards
For an emitter feedback bias Circuit having, RE=1Kohm, RC= 4.7Kohm, IB=5μA, IE = 1mA, VCC = 12V and Vce = 5V. Find the value of beta
254
What is the Thevenin’s voltage (VTH) in a voltage divider bias circuit?
(VCCR2)/(R1+R2)
Which of the following is a trivalent doping element?
Boron, Indium, Aluminum
The reverse current in a diode is of the order of
μA
The average DC level voltage of the full wave rectifier using Silicon diodes is _______
Vdc = 0.636(Vm - 2VK)
The forward voltage drop across a silicon diode is about
0.7 V
An amplifier is designed using fixed bias configuration, what is its output impedance
(source Resistor is bypassed)?
RD || rd
What is the relation between the drain current and source current once the voltage crosses
pinch off?
ID = IS
Which of the following is a trivalent doping element?
Gallium
The three terminals of a bipolar junction transistor are called:
Emitter, Base, Collector
What is the Thevenin’s resistance (RTH) in a voltage divider bias circuit?
(R1R2)/(R1+R2)
The βDC of a transistor is its
Current Gain
Which of the following is a pentavalent doping element?
Phosphorous, Arsenic, Antimony, Bismuth
In the given transistor amplifier, RC = 2.2kΩ and r’e =20 Ω, the voltage gain is:
110
In cutoff, VCE is
Maximum
Essentially independent of βDC and Provides a stable bias point
Emitter Bias
A Unipolar and a voltage-controlled device
JFET
Which among the following is the most commonly used semiconductor?
Silicon
What happens to the resistance of a pure semiconductor when heated?
The resistance decreases
How many valence electrons does a pentavalent impurity have?
5
For a certain JFET, IGSS is 10nA at VGS = 10 V, the input resistance is:
1000 MΩ
What is the effect of temperature on the recombination rate of electrons in electronic
circuits?
Recombination rate decreases with increase in the temperature
Which of the following is wrong about solar cell electronic devices?
It produces dark current
If the peak voltage on a centre tapped full wave rectifier circuit is 5V and diode cut in
voltage is 0.7. The peak inverse voltage on diode is_________
9.3V
How many valence electrons does a pentavalent impurity have?
5
Which of the following is created when trivalent impurities are added to a semiconductor?
Holes
Which of the following does a hole in the semiconductor define?
An incomplete part of an electron pair bond
An electron and a hole in close proximity would tend to _____.
attract each other
Which of the following does the resistivity of a semiconductor depend upon?
Atomic nature of the semiconductor
are made of semiconductor material in its purest form
Intrinsic semiconductors
A pure semiconductor behaves like an insulator at 0 deg. K because
Free electrons are not available for current conduction
The energy gap is much more in silicon than in germanium because
Its valence electrons are more tightly bound to their parent nucli
A P-type semiconductor results when
A trivalent impurity is added to an intrinsic semiconductor
An intrinsic semiconductor at absolute zero
Behaves like an insulator
A semiconductor has…. temperature co-efficient of resistance.
Negative
A doped semiconductor is also known as
Extrinsic semiconductor
The diode is in __________ state if the current established by the applied sources is such that
its direction matches that of the arrow in the diode symbol, and VD ≥ 0.7V for Si and VD ≥
0.3V for Ge
ON
A short circuit has a _________ drop across its terminals, and the current is limited only by the
surrounding network.
0 V
What is the peak inverse voltage across each diode in a voltage doubler?
2 Vm
The quiescent point (Q-point) is defined by a(n) __________.
DC network
The x-intercept of the load line with the characteristic curve is determined by the _________.
source voltage
As the load resistor increases, the slope of the dc load line and the levels of diode current
__________.
decrease
. The PIV rating of the diodes in a full-wave rectifier must be larger than _______ Vm.
1
When a diode is forward-biased, the anode:
Is positive relative to the cathode
For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=250 μA and β=100, find Vce.
10 V
