Lecture 4

Question 1

Introduced in 1904 by J.A. Fleming

Answer 1

vacuum-tube diode

Question 2

1906, Lee De Forest added a third
element, called the control grid, to
the vacuum diode, resulting in the
first amplifier,

Answer 2

triode

Question 3

It is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one n-type layers of material.

Answer 3

Transistor

Question 4

common types of transistor

Answer 4

Bipolar Junction Transistor
(BJT) & Field Effect Transistor (FET)

Question 5

Three terminal semiconductor devices which could be used to amplify signals.

Answer 5

Bipolar junction transistors (BJTs)

Question 6

The two basic types of bipolar junction transistor

Answer 6

NPN and PNP transistor

Question 7

The three layers / terminals of a BJT

Answer 7

emitter (E), base (B), and collector (C)

Question 8

For both NPN and PNP transistors, the electron flow is ____ to the conventional current flow.

Answer 8

opposite

Question 9

Derived from the fact that the base is common to both the input and output sides of the configuration

Answer 9

Common Base

Question 10

The most frequently
encountered transistor
configuration

Answer 10

Common Emitter Configuration

Question 10

Has unity voltage gain and sometimes called Emitter Follower

Answer 10

Common Collector Configuration

Question 10

This is a power supply that is directly or indirectly applied to the collector terminal of the transistor.

Answer 10

Collector biasing voltage (Vcc)

Question 11

This is a DC voltage that is used to bias the base of the transistor.

Answer 11

Base biasing voltage (Vbb)

Question 12

For common emitter, it will be nothing more than a ground connection.

Answer 12

Emitter biasing voltage (Vee)

Question 13

Provides a graph of the characteristics curves

Answer 13

Curve tracer

Question 13

Refers to the DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.

Answer 13

Biasing

Question 13

Voltage between base-emitter junction

Answer 13

Vbe

Question 13

Voltage between collector-emitter junction

Answer 13

Vce

Question 14

Obtained by utilizing the battery VCC connected in the output circuit.

Answer 14

Transistor biasing

Question 15

Simplest transistor dc bias configuration.

Answer 15

Fixed-bias circuit

Question 16

The line drawn over the collector curves to determine all possible operating points.

Answer 16

Loadline

Question 16

Generally a three terminal device which could be used in applications wherein bipolar junction transistors are used.

Answer 16

Field Effect Transistor (FET)

Question 17

A FET has three terminals:

Answer 17

drain (D), the gate
(G), and the source (S).

Question 18

Either n-channel or p-channel depending on its construction.

Answer 18

Junction Field Effect Transistor (JFETs)

Question 19

The JFET output has three regions of operation

Answer 19

ohmic, saturation and breakdown.

Question 20

It is used to control the current of the transistor.

Answer 20

VGS (gate-to-source voltage)

Question 21

the transfer equation of a D MOSFET.

Answer 21

Shockley’s equation

Question 22

It has a lateral structure with the gate located on top of the device and the source and drain on opposite sides of the wafer.

Answer 22

VMOS (Vertical MOSFET)

Question 23

It has a vertical structure with a trench etched into the silicon substrate, with the gate located in the trench and the source and drain on opposite sides of the trench.

Answer 23

UMOS (Trench MOSFET)

Question 24

It is a type of semiconductor technology widely used in digital circuits, such as microprocessors and memory chips. It utilizes both n-type and p-type MOSFETs to create low-power, high-performance digital circuits with high noise immunity and high integration density.

Answer 24

CMOS (Complementary Metal-Oxide-Semiconductor)

Question 25

It is a type of field-effect transistor that uses a metal-semiconductor junction for the gate. It is widely used in high-frequency electronic applications such as amplifiers and microwave devices.

Answer 25

MESFET (Metal Semiconductor Field Effect Transistor)