Lecture 4 Flashcards
Introduced in 1904 by J.A. Fleming
vacuum-tube diode
1906, Lee De Forest added a third
element, called the control grid, to
the vacuum diode, resulting in the
first amplifier,
triode
It is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one n-type layers of material.
Transistor
common types of transistor
Bipolar Junction Transistor
(BJT) & Field Effect Transistor (FET)
Three terminal semiconductor devices which could be used to amplify signals.
Bipolar junction transistors (BJTs)
The two basic types of bipolar junction transistor
NPN and PNP transistor
The three layers / terminals of a BJT
emitter (E), base (B), and collector (C)
For both NPN and PNP transistors, the electron flow is ____ to the conventional current flow.
opposite
Derived from the fact that the base is common to both the input and output sides of the configuration
Common Base
The most frequently
encountered transistor
configuration
Common Emitter Configuration
Has unity voltage gain and sometimes called Emitter Follower
Common Collector Configuration
This is a power supply that is directly or indirectly applied to the collector terminal of the transistor.
Collector biasing voltage (Vcc)
This is a DC voltage that is used to bias the base of the transistor.
Base biasing voltage (Vbb)
For common emitter, it will be nothing more than a ground connection.
Emitter biasing voltage (Vee)
Provides a graph of the characteristics curves
Curve tracer
Refers to the DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.
Biasing
Voltage between base-emitter junction
Vbe
Voltage between collector-emitter junction
Vce
Obtained by utilizing the battery VCC connected in the output circuit.
Transistor biasing
Simplest transistor dc bias configuration.
Fixed-bias circuit
The line drawn over the collector curves to determine all possible operating points.
Loadline
Generally a three terminal device which could be used in applications wherein bipolar junction transistors are used.
Field Effect Transistor (FET)
A FET has three terminals:
drain (D), the gate
(G), and the source (S).
Either n-channel or p-channel depending on its construction.
Junction Field Effect Transistor (JFETs)
The JFET output has three regions of operation
ohmic, saturation and breakdown.
It is used to control the current of the transistor.
VGS (gate-to-source voltage)
the transfer equation of a D MOSFET.
Shockley’s equation
It has a lateral structure with the gate located on top of the device and the source and drain on opposite sides of the wafer.
VMOS (Vertical MOSFET)
It has a vertical structure with a trench etched into the silicon substrate, with the gate located in the trench and the source and drain on opposite sides of the trench.
UMOS (Trench MOSFET)
It is a type of semiconductor technology widely used in digital circuits, such as microprocessors and memory chips. It utilizes both n-type and p-type MOSFETs to create low-power, high-performance digital circuits with high noise immunity and high integration density.
CMOS (Complementary Metal-Oxide-Semiconductor)
It is a type of field-effect transistor that uses a metal-semiconductor junction for the gate. It is widely used in high-frequency electronic applications such as amplifiers and microwave devices.
MESFET (Metal Semiconductor Field Effect Transistor)
