finals- FET Characteristics Flashcards
at high levels of VDS the JFET reaches a __________
Drain Characteristics: VDS-ID Characteristics
breakdown situation
if VDS > VDSmax, ID will _________
Drain Characteristics: VDS-ID Characteristics
increases uncontrollably
substrate is p-type and gate is n-type
Drain Characteristics: VDS-ID for p-channel FET
p-channel FET
to make Drain to source forward bias, a ____________ is applied between Drain and Source
Drain Characteristics: VDS-ID for p-channel FET
negative voltage
to make Gate to Source voltage reverse bias, a ____________ is applied between Gate and Source
Drain Characteristics: VDS-ID for p-channel FET
positive voltage
is the input (VGS) to output (ID) characteristics
Transfer Characteristics: VGS-ID Characteristics
Transfer Characteristic of JFET
it can be easily drawn from the VDS-ID Characteristic by determine the value of ID for a given value of VGS.
Transfer Characteristics: VGS-ID Characteristics
Transfer Characteristic