D-MOSFET

Question 1

MOSFET

Answer 1

Metal Oxide Semiconductor Field Effect Transistor

Question 2

is a type of Field Effect Transistor and it is a voltage-controlled device.

Answer 2

MOSFET

Question 3

MOSFET is also called?

Answer 3

Insulated Gate Field Effect Transistor (IGFET)

Question 4

used for switching or amplifying electronic
signals in electronic devices.

Answer 4

MOSFET

Question 5

most commonly used transistor and it can
be used in both analog and digital circuits.

Answer 5

MOSFET

Question 6

MOSFET is a four-terminal device with a:

Answer 6

1) Drain (D),
2) Source (S),
3) Gate (G),
4) Body (B)/Substrate (SS)

Question 7

The body terminal will always be connected to the ________ terminal hence, the MOSFET will operate as a ____________device

Answer 7

Source, three-terminal

Question 8

D-MOSFET

Answer 8

Depletion Mode - Metal Oxide Semiconductor Field Effect Transistor

Question 9

The ________-type MOSFET has characteristics similar to those of a JFET between ________ and ________ i.e between VGS=0 to VGS=VGSoff and it also has the added feature of characteristics to extend beyond __________.

Answer 9

depletion, cutoff and saturation, saturation

Question 10

In JFET for its operation, the Gate to Source voltage VGS should always be ________ biased and Drain to Source voltage VDS should be ________ biased. In MOSFET, the voltage VGS can be reverse or forward biased.

Depletion-type MOSFET

Answer 10

reverse, forward

Question 11

When reverse biased it just act similar to JFET and the MOSFET is said to be working in ________ mode. When VGS is forward biased, ________________ than the IDSS flows through it and the MOSFET is said to be in ____________ mode.

Depletion-type MOSFET

Answer 11

depletion, higher current, enhancement

Question 12

____________________ can operate in both depletion and enhancement mode. Where as enhancement-type MOSFET is operated only_________________

Answer 12

Depletion-type MOSFET, enhancement mode

Question 13

is used as the foundation on which the device is constructed.

N-Channel D-MOSFET Construction

Answer 13

p-type substrate

Question 14

Two n+-doped regions linked by an n-channel lies on a ________________

N-Channel D-MOSFET Construction

Answer 14

p-doped substrate

Question 15

The________ and ________ terminals are connected through metallic contacts to the n-doped regions.

N-Channel D-MOSFET Construction

Answer 15

Drain (D) and Source (S)

Question 16

The substrate is either internally connected or taken out as an additional terminal labeled ____ resulting in ______ terminal device.

N-Channel D-MOSFET Construction

Answer 16

SS, four

Question 17

The gate is insulated from the n-channel by a very thin layer of ________________ and a gate terminal is taken out through metallic contact.

N-Channel D-MOSFET Construction

Answer 17

silicon dioxide (SiO2)

Question 18

act as an insulator which sets up opposing electric fields within the dielectric when an external field is applied.

N-Channel D-MOSFET Construction

Answer 18

SiO2 layer

Question 19

Due to SiO2 insulating layer, there is no ________________________ between the gate and channel which accounts for very high input impedance of MOSFET

N-Channel D-MOSFET Construction

Answer 19

direct electrical connection

Question 20

When VGS=0 and VDS is applied across ________________ terminals, the free elctrons enters from the ________ get attracted towards positive terminal through ____________ and a current flow similar to that through the channel of JFET

N-Channel D-MOSFET Construction (Basic Operation)

Answer 20

drain to source, source, n-channel

Question 21

When a negative voltage VGS is applied, it repels electrons towards the p-type substrate and attracts holes from it, causing ____________. This reduces the number of free electrons in the channel, decreasing the __________.

N-Channel D-MOSFET Construction (Basic Operation)

Answer 21

recombination, current flow

Question 22

more ________, the higher is the rate of recombination and therefore lesser is the flow of ___________.

N-Channel D-MOSFET Construction (Basic Operation)

Answer 22

negative bias, drain current

Question 23

When VGS=>VGSoff, all the free electrons get recombined with ________, the channel becomes depleted of ________________, the pinch-off occurs and hence ____________________.

N-Channel D-MOSFET Construction (Basic Operation)

Answer 23

holes, charge carriers, no current flows

Question 24

When a ________ voltage VGS is applied, the gate will draw additional free electrons from the p-substrate due to the ________________ and establish new carriers through the ________. As the VGS continues to increase in the postive direction, the ____________ is increased at a rapid rate.

N-Channel D-MOSFET Construction (Basic Operation)

Answer 24

positive, reverse leakage current, collisions, drain current

Question 25

thus, the application of positive voltages VGS, _________ the level of free carriers in the channel compared to that encountered with VGS=0V.

N-Channel D-MOSFET Construction (Basic Operation)

Answer 25

enhance

Question 26

For this reason, in the region of ________________________, the MOSFET is said to be operating in enhancement mode whereas in the region of VGS=0 and negative VGS, the MOSFET is said to be operating in ____________.

Answer 26

positive gate-to-source voltage, depletion mode

Question 27

The ____________________is applicable for the depletion type MOSFET characteristics in both the ____________ and ________________ region.

Answer 27

Shockley’s equation, depletion and enhancement

Question 28

The p-channel Depletion MOSFET is similar to the n-channel except that the voltage polarities and current directions are ________.

P-Channel D-MOSFET Construction

Answer 28

reversed