Transistors, Logic Gates, and Combinational Logic Flashcards
Transistor
electrical device that acts as an electrical switch; typically made from silicon
MOSFET
metal-oxide semiconductor field-effect transistor
a specialized fieldeffect transistor or FET; like all transistors, used for switching or amplifying signals
● nMOSFET (nMOS): channel carries negative charges (electrons)
● pMOSFET (pMOS): channel carries positive charges (holes)
CMOS
Complimentary metal-oxide-semiconductor
Pairing nMOS and pMOS transistors together. p/n-type MOS act in a complementary way.
Furthermore, if pMOS parallel to each other than nMOS in a sequence and vice versa.
○ All CMOS gates must have 2 parts:
■ PUN (pullup network): pulls output “up” to PWR (logic 1)
● Rule: PUN can only contain PMOS transistors
■ PDN (pulldownnetwork): pulls output “down” to GND (logic 0)
● RULE: PDN can only contain NMOS transistors
○ Either PUN or PDN is “ON” at any given time (never both)
○ Output is taken where PUN and PDN intersect
Gate delays
longest path through a circuit
- delay between change in input and and change in output
- Delays limit the rate at which you can compute/ number of operations per second
PLA
Programmable Logic Array
Programmable logic device used to implement combination logic circuits.
Not most efficient, but it always works
Tool to go from truth table to logic gates
Combinational logic
Using several logic gates together to create a logic circuit that performs work for us like adders, multipliers, etc.
Combinational because their outputs are strictly dependent on the combination of input values that are being applied to the structure right now.
Multiplexer (MUX)
device that combines several analogs or digital input signals and forwards them into a SINGLE output line
How a transistor works
○ Off: electrons cannot move between the source and drain, no path exists
under the gate. The transistor aka “the switch” is “OFF.”
○ On (how it works in nMOS transistor):
■ Positive charge repels holes from under the gate
■ Attracts electrons from source/drain regions
■ Creates an “ntype” channel under the oxide
● Why it’s called an “nMOS” transistor
■ Current can flow from drain to source; electrons enter source and exit drain (go from source to drain)
■ Electrons cannot penetrate oxide
● Electric field forms across oxide, why it’s called “FET”
De Morgans Law
■ A NAND B = NOT (A AND B) = (NOT A) OR (NOT B)
■ A NOR B = NOT (A OR B) = (NOT A) AND (NOT B)
Structure of N Bit Incrementer
N 1bit half adders combined
Subtractor
negate combined with Nbit incrementer
On what does speed of MOSFET depend
Length of Channel
Electron takes less time to travel across smaller distance
Moore’s Law
Every 18 moths, # of transistors that fit into an IC will double
Distributive Laws
A AND (B OR C) = (A AND B) OR (A AND C) A OR (B AND C) = (A OR B) AND (A OR C)
Associative Laws
A AND (B AND C) = (A AND B) AND C A OR (B OR C) = (A OR B) OR C