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ELECS 3 > Test 3 > Flashcards

Test 3 Flashcards

1
Q

The name of pure semiconductor material that has an equal number of electrons and holes

A. n-type
B. pure type
C. intrinsic
D. p-type

A

C. intrinsic

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2
Q

Elements that has four valence electrons are classified as

A. conductor
B. insulator
C. elemental semiconductor
D. compound semiconductor

A

C. elemental semiconductor

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3
Q

An example of an elemental semiconductor.

A. Germanium (Ge)
B. Gallium Arsenide (GaAs)
C. Gallium Phosphide (GaP)
D. Aluminum Arsenide (AlAs)

A

A. Germanium (Ge)

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4
Q

Which of the following is an example of a compound semiconductor?

A. Gallium Arsenide (GaAs)
B. Gallium Phosphide (GaP)
C. Aluminum Arsenide (AlAs)
D. All of the above

A

D. All of the above

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5
Q

Germanium has an atomic number of 32 and an atomic weight of approximately 72 amu. How many electrons, protons and neutrons are there?

A. 32, 32, 40
B. 32, 32, 104
C. 40, 32, 32
D. 40, 32, 104

A

A. 32, 32, 40

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6
Q

The chemical bond that is present in a crystal lattice of silicon atoms.

A. covalent bond
B. electrovalent bond
C. ionic bond
D. metallic bond

A

A. covalent bond

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7
Q

The atomic weight of a silicon atom is approximately 28 amu. How many electrons, protons and neutrons does the atom consist?

A. 14, 42, 14
B. 14, 14, 42
C. 42, 14, 14
D. 14, 14, 14

A

D. 14, 14, 14

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8
Q

What is the total charge at the nucleus of silicon atom?

A. -12e C
B. 12e C
C. -14e C
D. 14e C

A

D. 14e C

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9
Q

In materials, what do you call the area that separates the valence band and the conduction band?

A. energy gap
B. forbidden band
C. insulation band
D. A and B are correct

A

B. forbidden band

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10
Q

At absolute zero temperature, semiconductor acts as

A. an insulator
B. a conductor
C. a semi-insulator
D. usual

A

A. an insulator

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11
Q

The electron flow in a semiconductor material is

A. opposite in direction of hole flow
B. the same direction with hole flow
C. the drift current
D. known as the conventional current

A

A. opposite in direction of hole flow

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12
Q

Typical range of the resistivity of a semiconductor

A. 10-15 – 10-18 Ω-cm
B. 10-5 – 10-8 Ω-cm
C. 10 – 104 Ω-cm
D. 108 – 1015 Ω-cm

A

C. 10 – 104 Ω-cm

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13
Q

Chemical bond that is significant in metals

A. ionic bonding
B. electrovalent bonding
C. covalent bonding
D. metallic bonding

A

D. metallic bonding

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14
Q

A semiconductor that is free from impurities

A. intrinsic semiconductor
B. extrinsic semiconductor
C. compensated semiconductor
D. elemental semiconductor

A

A. intrinsic semiconductor

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15
Q

The process of adding impurities in a semiconductor material.

A. growing
B. diffusion
C. doping
D. depleting

A

C. doping

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16
Q

Impurities with five valence electrons.

A. acceptor
B. donor
C. trivalent
D. pentavalent

A

D. pentavalent

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17
Q

Example of acceptor impurities.

A. pentavalent impurities
B. trivalent impurities
C. tetravalent impurities
D. hexavalent impurities

A

B. trivalent impurities

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18
Q

If the substance used in doping has less than four valence electrons, it is known as

A. acceptor
B. donor
C. trivalent
D. pentavalent

A

A. acceptor

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19
Q

Commonly used as donor impurities.

A. Antimony (Sb)
B. Arsenic (As)
C. Phosphorus (P)
D. all of the above

A

D. all of the above

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20
Q

Example of trivalent impurities.

A. Boron (B)
B. Gallium (Ga)
C. Indium (In)
D. all of the above

A

D. all of the above

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21
Q

Donor-doped semiconductor becomes a

A. N-type semiconductor
B. good conductor
C. p-n semiconductor
D. P-type semiconductor

A

A. N-type semiconductor

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22
Q

What do you call a semiconductor that is doped with both donor and acceptor impurities?

A. double doped semiconductor
B. compensated semiconductor
C. compound semiconductor
D. diffused semiconductor

A

B. compensated semiconductor

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23
Q

The resistance of a semiconductor is known as

A. bulk resistance
B. intrinsic resistance
C. extrinsic resistance
D. dynamic resistance

A

A. bulk resistance

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24
Q

The most extensively used semiconductor.

A. silicon
B. germanium
C. gallium phosphide
D. gallium arsenide

A

A. silicon

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25
Q

Semiconductor whose electron and hole concentrations are equal.

A. extrinsic semiconductor
B. intrinsic semiconductor
C. compensated semiconductor
D. doped semiconductor

A

B. intrinsic semiconductor

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26
Q

Silicon is widely used over germanium due to its several advantages, what do you think is its most significant advantage?

A. abundant
B. cheap
C. temperature stable
D. low leakage current

A

D. low leakage current

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27
Q

Current flow in a semiconductor that is due to the applied electric field.

A. diffusion current
B. conventional current
C. drift velocity
D. drift current

A

D. drift current

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28
Q

The movement of charge carriers in a semiconductor even without the application of electric potential.

A. diffusion current
B. conventional current
C. drift current
D. saturation current

A

A. diffusion current

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29
Q

Typically, how much energy is required for a valence electron to move to the conduction band for a doped semiconductor?

A. 0 eV
B. 0.05 eV
C. 1.0 eV
D. 5.0 eV

A

B. 0.05 eV

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30
Q

Conduction of electrons in a doped semiconductor happens at

A. conduction band
B. forbidden band
C. valence band
D. nuclei band

A

A. conduction band

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31
Q

Theoretically, where does the conduction of holes occur in a doped semiconductor?

A. conduction band
B. forbidden band
C. valence band
D. empty band

A

C. valence band

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32
Q

In energy band diagram of a doped semiconductor, the donor level

A. is near the valence band
B. is near the conduction band
C. is exactly in between the valence and conduction band
D. depends on the amount of doping

A

B. is near the conduction band

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33
Q

The acceptor level in a doped semiconductor

A. is near the valence band level
B. is near the conduction level
C. is exactly in between the conduction and valence band
D. will depend on the concentration of doping

A

A. is near the valence band level

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34
Q

In a semiconductor material, what will happen to the number of free electrons when the temperature rises?

A. increases
B. decreases exponentially
C. decreases
D. remains the same

A

A. increases

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35
Q

The electrical resistance of a semiconductor material will ________ as the temperature increases.

A. increase
B. increase exponentially
C. decrease
D. not change

A

C. decrease

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36
Q

The potential required to removed a valence electron

A. valence potential
B. threshold potential
C. critical potential
D. ionization potential

A

D. ionization potential

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37
Q

Among the given elements, which is considered as nonmetal?

A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. lead (Pb)

A

A. silicon (Si)

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38
Q

A semiconductor that is classified as a metalloid or semimetal

A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. carbon (C)

A

B. germanium (Ge)

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39
Q

Semiconductor that is very rare, it only occurs in minute quantities in many metal sulfides

A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. lead (Pb)

A

B. germanium (Ge)

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40
Q

Compound semiconductors are also known as

A. compensated semiconductors
B. amorphous semiconductors
C. organic semiconductors
D. inner-mettalic semiconductors

A

D. inner-mettalic semiconductors

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41
Q

What semiconductor that is mostly used in devices requiring the emission or absorption of lights?

A. amorphous semiconductor
B. organic semiconductor
C. compound semiconductor
D. elemental semiconductor

A

C. compound semiconductor

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42
Q

For high-speed integrated circuit, which semiconductor material given below is best to be used?

A. silicon
B. germanium
C. carbon
D. gallium arsenide

A

D. gallium arsenide

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43
Q

How much impurity concentration is needed for a sample of silicon to change its electrical property from a poor conductor to a good conductor?

A. one part per hundred
B. one part per thousand
C. one part per million
D. one part per billion

A

C. one part per million

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44
Q

The restriction of certain discrete energy levels in a semiconductor material can be predicted generally by using what model?

A. Bohr model
B. string model
C. wave model
D. particle model

A

A. Bohr model

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45
Q

Is defined as the energy acquired by an electron moving through a potential of one volt.

A. electron Joules (eJ)
B. electron-potential
C. oxidation potential
D. electron Volt (eV)

A

D. electron Volt (eV)

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46
Q

At room temperature, in a perfect silicon crystal, the equilibrium concentration of thermally generated electrons in the conduction band is about

A. 1.5 x 105 per cubic cm.
B. 1.5 x 1010 per cubic cm.
C. 1.5 x 1015 per cubic cm.
D. 1.5 x 1020 per cubic cm.

A

B. 1.5 x 1010 per cubic cm.

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47
Q

What is the basis in operation of semiconductor photoconductors?

A. EHP generation
B. EHP degeneration
C. EHP optical degeneration
D. EHP optical generation

A

D. EHP optical generation

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48
Q

The semiconductor that is used in xerography

A. selenium (Se)
B. gallium phosphide (GaP)
C. cadmium compound
D. organic semiconductor

A

A. selenium (Se)

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49
Q

A silicon material has an intrinsic concentration ni=1010 per cubic centimeter at room temperature. If it is doped with 1015 antimony atoms per cubic centimeter, what is now the approximate electron concentration at the conduction band?

A. 105 electrons
B. 1010 electrons
C. 1015 electrons
D. 1020 electrons

A

C. 1015 electrons

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50
Q

When an electron at the conduction band falls back to the valence band it will recombine with the hole. This is known as

A. regeneration
B. reunion
C. combination
D. recombination

A

D. recombination

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51
Q

Which semiconductor is mostly used to detect near infrared?

A. silicon
B. germanium
C. carbon
D. silicon carbide

A

B. germanium

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52
Q

What semiconductor that is good for high-temperature applications?

A. indium antimonide (InSb)
B. gallium anitmonide(GaSb)
C. silicon carbide (SiC)
D. diamond (C)

A

A. indium antimonide (InSb)

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53
Q

Among the given semiconductors below, which has the highest mobility?

A. silicon
B. germanium
C. gallium arsenide
D. indium antimonide

A

D. indium antimonide

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54
Q

A semiconducting glass is known as

A. isomorphous semiconductor
B. amorphous semiconductor
C. organic semiconductor
D. compound semiconductor

A

B. amorphous semiconductor

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55
Q

For an electroluminescent of green and red lights, which semiconductor is best?

A. silicon carbide
B. gallium arsenide
C. indium antimonide
D. gallium phosphide

A

D. gallium phosphide

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56
Q

Typical range of power dissipation for a semiconductor to be considered as “low power” or “small signal”

A. less than 1 watt
B. 5 < P < 10 watts
C. 10 < P < 20 watts
D. 20 watts above

A

A. less than 1 watt

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57
Q

In the design of high power semiconductor devices, it involves what factors?

A. making the size of the semiconductor bigger
B. packing the device into a bigger case
C. excellent contact between the semiconductor and the case
D. all of the above

A

D. all of the above

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58
Q

How to have a better high-frequency response in designing semiconductor devices?

A. make the chip as small as possible
B. the leads should be made shorter and smaller
C. smaller packaging
D. all of the above

A

D. all of the above

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59
Q

Before an electron can participate in the conduction of electricity, it must leave from the valence band and transfer to the conduction band. Transferring to the conduction band involves energy acquisition by an electron from external sources and this energy must be greater than the energy gap of the material. Which semiconductor material has the highest energy gap?

A. Zinc Sulfide (ZnS)
B. silicon (Si)
C. germanium (Ge)
D. Indium Antimonide (InSb)

A

A. Zinc Sulfide (ZnS)

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60
Q

Which of the following semiconductors has the smallest energy gap?

A. ZnS
B. Si
C. Ge
D. InSb

A

D. InSb

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61
Q

The ease with which a charge carrier (electron or hole) moves in a semiconductor material is known as mobility. It is also defined as the average drift velocity of electrons and holes per unit electrostatic field. Which of the semiconductor materials has the highest value of electron-mobility?

A. InSb
B. Ge
C. Si
D. AlP

A

A. InSb

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62
Q

In semiconductor materials, electrons have a higher value of mobility than holes, but which semiconductor material has the slowest electron-mobility?

A. InSb
B. GaP
C. GaAs
D. AlP

A

D. AlP

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63
Q

Solar cell is a semiconductor electric-junction device, which absorbs the radiant energy of sunlight and converts it directly and efficiently into electrical energy. This device, uses what type of semiconductor materials?

A. single-crystal silicon
B. amorphous or polycrystalline silicon
C. GaAs, CdS, CdTe, CuS
D. all of the above

A

D. all of the above

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64
Q

What is formed when n-type and p-type semiconductors are brought together?

A. pn junction
B. semiconductor junction
C. energy band gap
D. semiconductor diode

A

A. pn junction

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65
Q

PN junction acts as a one way valve for electrons because _________.

A. the circuit in which the diode is used, only attempts to pump electrons in one diode
B. electrons tend to follow the direction of the hole
C. there is a little mechanical switch inside a diode
D. when electrons are pump from P to N, free electrons and holes are force apart leaving no way for electrons to cross the junction

A

D. when electrons are pump from P to N, free electrons and holes are force apart leaving no way for electrons to cross the junction

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66
Q

The device that is formed when an n-type and p-type semiconductors are brought together

A. pn junction
B. semiconductor junction
C. depletion region
D. junction diode

A

D. junction diode

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67
Q

An external voltage applied to a junction reduces its barrier and aid current to flow through the junction

A. reverse bias
B. external bias
C. junction bias
D. forward bias

A

D. forward bias

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68
Q

A device containing an anode and a cathode or a pn junction of a semiconductor as the principal elements and provides unidirectional conduction.

A. diode
B. diac
C. triode
D. triac

A

A. diode

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69
Q

Unidirectional conduction in two-electrodes in any device other than a diode, such that rectification between the grid and cathode of a triode, or asymmetrical conduction between the collector and base of a transistor is called

A. rectification
B. diode action
C. clipping
D. clamping

A

B. diode action

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70
Q

The p-type material in a semiconductor junction diode is technically termed as

A. positive terminal
B. negative terminal
C. cathode
D. anode

A

D. anode

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71
Q

Cathode in a semiconductor junction diode is referred to the

A. positive terminal
B. junction
C. p-type terminal
D. n-type terminal

A

D. n-type terminal

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72
Q

The area in the semiconductor diode where there are no charge carriers

A. depletion layer
B. depletion region
C. depletion mode
D. depletion area

A

B. depletion region

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73
Q

Depletion region is an area in a semiconductor device where there are no charge carriers exist. This will be always near the junction of n-type and p-type materials. What causes this junction to be depleted by charge carriers?

A. Due to the recombination of holes and electrons at the junction
B. Due to the cancellation of positively charge protons and negatively charge electrons
C. Due to the annihilation of charge carriers
D. Due to the combination of positively charge holes and negatively charge electrons

A

D. Due to the combination of positively charge holes and negatively charge electrons

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74
Q

A junction diode is said to be forward-biased if

A. Anode is supplied more positive than the cathode.
B. Anode is supplied more negative than the cathode.
C. A voltage greater than threshold is applied, with cathode less positive than anode.
D. A voltage greater than threshold is applied, with cathode less negative than anode.

A

C. A voltage greater than threshold is applied, with cathode less positive than anode.

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75
Q

What do you call the very small amount of current that will flow in the diode when it is reverse biased?

A. saturation current
B. reverse saturation current
C. cut-off current
D. holding current

A

B. reverse saturation current

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76
Q

When the diode is supplied with forward direction potentials but with a magnitude less than the threshold voltage of the diode, still it will not “turn-on” and will only allow a very small amount of current to pass. This very small current is known

A. as leakage current
B. as forward saturation current
C. as holding current
D. as cut-off current

A

D. as cut-off current

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77
Q

The minimum voltage required before a diode can totally conduct in a forward direction.

A. triggering voltage
B. breakdown voltage
C. saturation voltage
D. threshold voltage

A

D. threshold voltage

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78
Q

What will happen to the threshold voltage of the diode when it operates at higher temperatures.

A. increases
B. increases exponentially
C. decreases
D. decreases exponentially

A

C. decreases

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79
Q

The forward current in a conducting diode will ______________ as the operating temperature increases.
A. not be affected
B. decrease
C. decrease exponentially
D. increase

A

D. increase

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80
Q

As the operating temperature of a reverse-biased diode is increased, its leakage or reverse saturation current will

A. Increase
B. increase exponentially
C. decrease
D. decrease exponentially

A

B. increase exponentially

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81
Q

The small value of direct current that flows when a semiconductor device has reverse bias

A. surge current
B. bias current
C. reverse current
D. current limit

A

C. reverse current

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82
Q

Normally, diodes will not conduct when reverse-biased, but if the reverse voltage is increased further, a point will be reached where the diode gives up and allowing the current to surge. This voltage is one of the limiting parameter of diodes and is known as

A. breakdown voltage (VBR)
B. peak inverse voltage (PIV)
C. peak reverse voltage (PRV)
D. all are correct

A

D. all are correct

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83
Q

For a silicon diode, calculate the current at room temperature if the forward voltage VF = 0.3 V and the reverse saturation current IS = 100 nA.

A. 32.8 μA
B. 10.8 μA
C. 32.8 mA
D. 10.8 mA

A

A. 32.8 μA

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84
Q

The breakdown voltage of a junction diode will ___________

A. Increase as operating temperature rises.
B. Increase exponentially as operating temperature rises.
C. Decrease as operating temperature rises.
D. Not change as operating temperature rises.

A

C. Decrease as operating temperature rises.

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85
Q

Calculate the new threshold voltage of a germanium diode when it operates at 100 0C.

A. 0.113 V
B. 0.188 V
C. 0.215 V
D. 0.513 V

A

A. 0.113 V

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86
Q

A silicon diode has a reverse saturation current of 50 nA at room temperature. If the operating temperature is raised by 50°C, what is now the reverse saturation current?

A. 105.56 nA
B. 287.73 nA
C. 827.89 nA
D. 1.66 µA

A

D. 1.66 µA

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87
Q

In every increase of 10°C in the operating temperature of a diode will cause its reverse saturation current to

A. decrease
B. double
C. triple
D. quadruple

A

B. double

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88
Q

What do you call the resistance of the diode when operating at a steady state voltage?

A. dc resistance
B. dynamic resistance
C. ac resistance
D. average resistance

A

A. dc resistance

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89
Q

The resistance of the diode that is significant when operating with a small ac signal

A. dc resistance
B. static resistance
C. dynamic resistance
D. average resistance

A

C. dynamic resistance

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90
Q

When a diode is used in large ac voltages, the resistance that is to be considered is

A. dc resistance
B. static resistance
C. dynamic resistance
D. average resistance

A

D. average resistance

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91
Q

At forward bias condition, what will happen to the diode resistance when the applied voltage is increased?

A. will also increase
B. will increase exponentially
C. will decrease
D. will not change

A

C. will decrease

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92
Q

The primary use of Zener diode in electronic circuits.

A. resistance regulator
B. rectifier
C. voltage regulator
D. current regulator

A

C. voltage regulator

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93
Q

What phenomenon in electronics does an avalanche breakdown primarily dependent?

A. Doping
B. Recombination
C. Ionization
D. Collision

A

C. Ionization

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94
Q

When a diode is reverse biased the depletion region widens, since it is in between positively charge holes and negatively charge electrons, it will have an effect of a capacitor, this capacitance is called what?

A. diffusion capacitance
B. storage capacitance
C. stray capacitance
D. transition capacitance

A

D. transition capacitance

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95
Q

In a semiconductor diode, the total capacitance, that is the capacitance between terminals and electrodes, and the internal voltage variable capacitance of the junction is called

A. diffusion capacitance
B. transition capacitance
C. depletion-region capacitance
D. diode capacitance

A

D. diode capacitance

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96
Q

What capacitance is significant when the diode is forward biased?

A. diffusion capacitance or storage capacitance
B. transition capacitance
C. depletion-region capacitance
D. stray capacitance

A

A. diffusion capacitance or storage capacitance

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97
Q

A diode that is especially designed to operate as a voltage-variable capacitor. It utilizes the junction capacitance of a semiconductor diode.

A. varactor
B. varicap
C. varistor
D. A and B are correct

A

D. A and B are correct

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98
Q

The capacitance of a varactor will _______ when the forward bias voltage is increased.

A. increase
B. decrease
C. exponentially decrease
D. not change

A

A. increase

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99
Q

The time taken by the diode to operate in the reverse condition from forward conduction

A. reverse recovery time
B. forward recovery time
C. reverse holding time
D. reverse time constant

A

A. reverse recovery time

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100
Q

In operating a diode at high-speed switching circuits, one of the most important parameters to be considered is

A. ac resistance
B. diode capacitance
C. noise figure
D. reverse recovery time (trr)

A

D. reverse recovery time (trr)

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101
Q

The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state.

A. reverse recovery time
B. forward recovery time (tfr)
C. saturation time
D. conduction time

A

B. forward recovery time (tfr)

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102
Q

The maximum power the diode can handle.

A. maximum derating power
B. maximum consumption power
C. breakdown power
D. maximum dissipation power

A

D. maximum dissipation power

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103
Q

What is the most important specification for semiconductor diode?

A. Forward resistance
B. Reverse resistance
C. Peak inverse voltage
D. Current capacity

A

D. Current capacity

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104
Q

What will happen to the power handling capability of the diode if it is to be operated at a higher temperature?

A. decreases
B. increases
C. increases exponentially
D. will not be affected

A

A. decreases

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105
Q

Diode parameter that will inform the user as to what factor does the power handling capability of the diode is reduced as the operating temperature is increased.
A. power derating factor
B. power dissipating factor
C. power reduction constant
D. all of the above

A

A. power derating factor

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106
Q

A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/°C. How much power the diode can handle if operated at 50°C.

A. 625 mW
B. 505 mW
C. 495 mW
D. 375 mW

A

D. 375 mW

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107
Q

A semiconductor device especially fabricated to utilize the avalanche or zener breakdown region. This is normally operated in the reverse-region and its application is mostly for voltage reference or regulation.

A. varactor diode
B. zener diode
C. shockley diode
D. Schottky barrier diode

A

B. zener diode

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108
Q

Refers to a special type of diode which is capable of both amplification and oscillation.

A. Junction diode
B. Tunnel diode
C. Point contact diode
D. Zener diode

A

B. Tunnel diode

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109
Q

The effect obtain when the electric field across a semiconductor is strong enough which causes the free electrons to collide with valence electrons, thereby releasing more electrons and a cumulative multiplication of charge carriers occur.

A. Gunn
B. avalanche
C. tunneling
D. diffusion

A

B. avalanche

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110
Q

A negative resistance diode commonly used in microwave oscillators and detectors, it is sometimes used as amplifiers. This device is also known as Esaki diode.

A. varactor diode
B. Schottky diode
C. IMPATT diode
D. tunnel diode

A

D. tunnel diode

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111
Q

A rectifying metal-semiconductor junction

A. Schottky barrier diode
B. surface barrier diode
C. hot-carrier or hot-electron diode
D. all of the above are correct

A

D. all of the above are correct

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112
Q

Diode whose negative resistance depends on a specific form of quantum-mechanical bond structure of the material

A. Gunn diode
B. tunnel diode
C. TRAPATT diode
D. backward diode

A

A. Gunn diode

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113
Q

One of the electronic semiconductor devices known as diac, function as

A. Four terminal multi-directional switch
B. Two terminal bi-directional switch
C. Two terminal unidirectional switch
D. Three terminal bi-directional switch

A

C. Two terminal unidirectional switch

114
Q

Another name of a three-layer diode. This is also considered as an ac diode.

A. Shockley diode
B. thyrector
C. thyristor
D. diac

A

D. diac

115
Q

A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device.

A. Read diode
B. IMPATT diode
C. TRAPATT diode
D. all of the above

A

D. all of the above

116
Q

What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in permanent contact with the surface of a wafer of semiconductor material such as silicon, germanium or gallium arsenide?

A. point-contact diode
B. diac
C. PiN diode
D. thyrector

A

A. point-contact diode

117
Q

When the p-n junction of a semiconductor diode is inserted with an intrinsic material, the diode becomes a

A. backward diode
B. Read diode
C. Schokley diode
D. PiN diode

A

D. PiN diode

118
Q

A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR).

A. Shockley diode
B. thyrector
C. Schottky diode
D. diac

A

A. Shockley diode

119
Q

A diode that is especially processed so that its high-current flow takes place when the junction is reverse-biased. It is a variation of a tunnel diode.

A. Esaki diode
B. Read diode
C. zener diode
D. backward diode

A

D. backward diode

120
Q

A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. It can be viewed as two zener diodes connected back-to-back in series.

A. bizener diode
B. diac
C. thyristor
D. thyrector

A

D. thyrector

121
Q

A type of Read diode that uses a heavily doped n-type material as its drift region

A. IMPATT diode
B. TRAPATT diode
C. TUNNETT diode
D. MITATT

A

A. IMPATT diode

122
Q

A device containing more than one diode. An example is the full-wave bridge-rectifier integrated circuit.

A. diode array
B. diode IC
C. diode pack
D. combined diode

A

C. diode pack

123
Q

Is the combination of the inductance of the leads and electrodes, capacitance of the junction, and the resistance of the junction of a semiconductor diode.

A. diode impedance
B. diode ac resistance
C. diode reactance
D. diode ac parameter

A

A. diode impedance

124
Q

In a reverse-biased pn junction, the sudden large increase in current that occurs when a particular value of reversed voltage is reached, and which is due to ionization by the high intensity electric field in the depletion region.

A. Zener effect
B. Hall effect
C. breakdown voltage
D. ionization

A

A. Zener effect

125
Q

The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field

A. Gunn effect
B. Hall effect
C. Zener effect
D. avalanche

A

A. Gunn effect

126
Q

The impedance presented by a junction operating in its zener breakdown region.

A. diode impedance
B. zener impedance
C. breakdown impedance
D. critical impedance

A

B. zener impedance

127
Q

A curve showing the relationship between the voltage and the current of the diode at any given temperature

A. characteristic curve
B. transfer curve
C. transfer characteristic curve
D. all are correct

A

A. characteristic curve

128
Q

The line that is plotted in the diode characteristic curve which represents the load

A. linear line
B. operating line
C. load line
D. transfer load line

A

C. load line

129
Q

Diode is said to be operating at a point where the characteristic curve and the load line intersect. This point is technically termed as

A. Q-point
B. operating point
C. quiescent point
D. all are correct

A

D. all are correct

130
Q

What will happen to the magnitude of the load-line slope when the load resistance is decreased?

A. it will also decrease
B. it will increase
C. it will increase exponentially
D. is not affected by the load

A

B. it will increase

131
Q

Quiescent or Q-point position is dependent on

A. the supply voltage
B. the load resistance
C. the type of diode
D. all of the above

A

D. all of the above

132
Q

A germanium diode is connected to a load resistance of 1.5 kΩ and is supplied with 12-V such that the diode will be forward biased. What is the voltage across the diode?

A. approximately 12 V
B. approximately 0.7 V
C. approximately 0.3 V
D. lack of data and can’t be solved

A

C. approximately 0.3 V

133
Q

What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased.

A. 50 V
B. 0.7 V
C. 0.3 V
D. can not be solve, lack of data

A

A. 50 V

134
Q

Two germanium diodes are connected in series and have a load resistance of 10 kΩ and a forward supply voltage of 5 V. Calculate the voltage across the load resistor.

A. 4.7 V
B. 4.4 V
C. 0.6 V
D. 0.3 V

A

B. 4.4 V

135
Q

A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kΩ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode?

A. 10 V
B. 1.0 V
C. 0.7 V
D. 0.3 V

A

D. 0.3 V

136
Q
  1. What is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? The resistor network is supplied with 10 V.
    A. 0.7 V
    B. 9.3 V
    C. 10 V
    D. Can’t be solve, lack of data
A

A. 0.7 V

137
Q

Diode circuit that is used to cut a portion of the input signal

A. clipper
B. clamper
C. peak detector
D. level shifter

A

A. clipper

138
Q

A clipper circuit wherein the diode is connected in series with the load

A. series clipper
B. parallel clipper
C. shunt clipper
D. series feed clipper

A

A. series clipper

139
Q

What do you call a clipper circuit wherein the diode is shunted with the load?

A. series clipper
B. parallel clipper
C. cascade clipper
D. cascade clipper

A

B. parallel clipper

140
Q

A network with a diode and a capacitor that is used to shift the dc-level of the input signal

A. clipper
B. clamper
C. shifter
D. level inverter

A

B. clamper

141
Q

Half-wave rectifier is a good example of

A. a series clamper
B. a parallel clamper
C. a parallel clipper
D. a series clipper

A

D. a series clipper

142
Q

Which of the given circuit below must have a capacitor?

A. rectifier
B. clipper
C. clamper
D. all of the above

A

C. clamper

143
Q

How many capacitors are used in a diode-capacitor half- wave voltage doubler?

A. 1
B. 2
C. 3
D. 4

A

B. 2

144
Q

An improvement of a diode-capacitor half-wave voltage doubler is the full-wave doubler, this circuit uses how many capacitors?

A. 1
B. 2
C. 3
D. 4

A

B. 2

145
Q

In a diode-capacitor voltage quadrupler, what is the voltage across the third stage capacitor?

A. Vmax
B. 2 Vmax
C. 3 Vmax
D. 4 Vmax

A

B. 2 Vmax

146
Q

A combination of several diodes in a single housing

A. diode array
B. diode network
C. diode IC
D. diode matrix

A

A. diode array

147
Q

A chopper, employing an alternately biased diodes as the switching element.

A. diode chopper
B. active chopper
C. junction chopper
D. all are correct

A

A. diode chopper

148
Q

A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What should be the value of the resistor needed by the LED to operate normally?

A. 25 Ω
B. 250 Ω
C. 25 kΩ
D. 250 kΩ

A

B. 250 Ω

149
Q

A simple voltage-regulator whose output is the constant voltage drop developed across a zener diode conducting in the reverse breakdown region. The regulator circuit consists of a zener diode in parallel with the load and an appropriate limiting resistor.

A. ordinary voltage regulator
B. zener voltage regulator
C. series voltage regulator
D. switching voltage regulator

A

B. zener voltage regulator

150
Q

Logic circuitry in which a diode is the logic element and a transistor acts as an inverting amplifier.

A. RTL
B. DTL
C. HDTL
D. ECL

A

B. DTL

151
Q

What is a bridge rectifier having diodes in two arms and resistors in the other two?

A. full-wave bridge
B. half-wave bridge
C. half-bridge
D. full bridge

A

C. half-bridge

152
Q

An over-voltage protection circuit employing a zener diode and an SCR whose function is to produce high overload by-pass current on a circuit.

A. regulator
B. current enhancer
C. crowbar
D. shunted zener

A

C. crowbar

153
Q

The flow of electron in a NPN transistor when used in electronic circuit is from _______.

A. collector to base
B. collector to base
C. emitter to collector
D. base to emitter

A

C. emitter to collector

154
Q

A three terminal, three layer semiconductor device that has the ability to multiply charge carriers. This device was first introduced at Bell Laboratories, by Brattain and Bardeen in 1947 and which opens a completely new direction of interest and development in the field of electronics.

A. triode
B. triac
C. SCR
D. transistor

A

D. transistor

155
Q

An active semiconductor device, capable of amplification, oscillation, and switching action. It is an acronym for transfer resistor and had replaced the tube in most applications.

A. thyristor
B. thyrector
C. SBS
D. transistor

A

D. transistor

156
Q

Transistor replaces the old vacuum tubes because it has several obvious advantages, what are they?

A. smaller, lightweight and rugged construction
B. no heater loss, low operating voltage and therefore efficient
C. low power consumption and low power dissipation
D. all of the above

A

D. all of the above

157
Q

Which of the three regions/areas in a transistor that is the smallest in construction?

A. emitter
B. collector
C. base
D. all are equal

A

C. base

158
Q

The region or area in a transistor that is heavily doped

A. at the junction
B. emitter
C. collector
D. base

A

B. emitter

159
Q

A transistor in which the base is diffused and the emitter is alloyed. The collector is provided by the semiconductor substrate into which alloying and diffusion are affected.

A. alloy-transistor
B. alloy-diffused transistor
C. alloy junction transistor
D. diffused junction transistor

A

B. alloy-diffused transistor

160
Q

A transistor whose junctions are created by alloying

A. alloy transistor
B. alloy-diffused transistor
C. diffused transistor
D. alloy junction

A

A. alloy transistor

161
Q

In a semiconductor device, a p-n junction formed by alloying a suitable material such as indium with the semiconductor.

A. alloy junction
B. diffused junction
C. depletion junction
D. storage junction

A

A. alloy junction

162
Q

A transistor in which one or both electrodes are created by diffusion

A. diffused transistor
B. alloy transistor
C. planar transistor
D. mesa transistor

A

A. diffused transistor

163
Q

A two-junction transistor whose construction takes the form of a pnp or a npn. Such device uses both electron and hole conduction and is current-driven.

A. bipolar transistor
B. unipolar transistor
C. bi-directional transistor
D. double junction transistor

A

A. bipolar transistor

164
Q

The predecessor of the junction transistor, and is characterized by a current amplification factor, alpha of greater than one.

A. surface-charge transistor
B. surface-barrier transistor
C. schottky transistor
D. point-contact transistor

A

D. point-contact transistor

165
Q

For a transistor, the outer layers are

A. lightly doped semiconductors
B. heavily doped semiconductors
C. no doping at all
D. A and B above

A

B. heavily doped semiconductors

166
Q

The ratio of the total width of the outer layers to that of the center layer

A. 100:1
B. 150:5
C. 150:1
D. 1:150

A

C. 150:1

167
Q

The ratio of the doping level of the outer layers to that of the sandwiched material

A. 10:3 or more
B. 10:2 or more
C. 10:3
D. 10:1 or less

A

D. 10:1 or less

168
Q

Limiting the number of “free” carriers will

A. increase the conductivity but decreases the resistance
B. decrease the conductivity but increases the resistance
C. increase the conductivity as well as resistivity
D. decrease the conductivity as well as resistivity

A

B. decrease the conductivity but increases the resistance

169
Q

The term ________ reflects the fact that holes and electrons participate in the injection process into the oppositely polarized material.

A. unipolar
B. bipolar
C. tetrode
D. pentode

A

B. bipolar

170
Q

What device, that employs only electron or hole?

A. unipolar
B. bipolar
C. tetrode
D. pentode

A

A. unipolar

171
Q

At forward-biased junction of pnp transistor, majority carriers flow heavily

A. from p- to the n-type material
B. from n- to the p-type material
C. from p- to p-type material
D. A and B above

A

A. from p- to the n-type material

172
Q

The minority-current component of a transistor is called

A. leakage current
B. emitter current
C. cut-off current
D. all of the above

A

A. leakage current

173
Q

For general-purpose transistors, IC is measured in ____, while ICO is measured in ____.

A. micro and nanoamperes
B. milliamperes and microamperes
C. milliamperes and nanoamperes
D. b and c above

A

D. b and c above

174
Q

Is temperature sensitive, and can severely affect the stability of the system, when not carefully examined during design

A. IC
B. ICO
C. IS
D. IE

A

B. ICO

175
Q

For the transistor, the arrow in the graphic symbol defines the direction of _______ through the device

A. leakage current flow
B. emitter electron flow
C. majority carrier flow
D. emitter conventional current flow

A

D. emitter conventional current flow

176
Q

In the dc mode, the levels of IC and IE due to the majority carriers are related by the quantity

A. alpha (α)
B. beta (β)
C. gamma (γ)
D. A and B above

A

A. alpha (α)

177
Q

In the ac mode, alpha α is formally called

A. common-base, short-circuit, amplification factor
B. common-emitter, amplification factor
C. common-collector, amplification factor
D. all of the above are correct

A

A. common-base, short-circuit, amplification factor

178
Q

Phrases “not pointing in” and “pointing in” simply mean

A. npn and pnp
B. pnp and npn
C. npn only
D. pnp only

A

A. npn and pnp

179
Q

In the dc mode, the levels of IC and IB are related by a quantity called

A. α
B. β
C. γ
D. A and B above

A

B. β

180
Q

For practical transistor devices, the level of β typically ranges

A. from about 25 to over 400
B. less than 1
C. mostly in midrange of 50 to 400
D. A or C above

A

C. mostly in midrange of 50 to 400

181
Q

The formal name of βac

A. Common-collector reverse-current amplification factor
B. Common-collector forward-current amplification factor
C. Common-emitter forward-current amplification factor
D. Common-emitter reverse-current amplification factor

A

C. Common-emitter forward-current amplification factor

182
Q

It is a particularly important parameter that provides a direct link between current levels of the input and output circuits for a common-emitter configuration.

A. α
B. β
C. A and B above
D. none of the above

A

B. β

183
Q

The _______ id defined as that area below IC= ICEO.

A. active region
B. cutoff region
C. saturation region
D. none of the above

A

B. cutoff region

184
Q

It is referred to as the communication link between the manufacturer and user

A. specification sheet
B. characteristic manual
C. characteristic curve
D. all of the above

A

D. all of the above

185
Q

The information that can be found in most specification sheets?

A. maximum ratings
B. thermal characteristics
C. electrical characteristics
D. all of the above

A

D. all of the above

186
Q

With an ohmmeter, a large or small resistance in either junction of an npn or pnp transistor indicates

A. faulty device
B. well functioning device
C. leaky device
D. either A or C

A

A. faulty device

187
Q

At base-emitter junction, using an ohmmeter, if the positive (+) lead is connected to the base and the negative (-) lead to the emitter, a low resistance reading would indicate

A. npn transistor
B. pnp transistor
C. germanium transistor
D. silicon transistor

A

A. npn transistor

188
Q

At base-emitter junction, if the positive (+) lead is connected to the base and the negative (-) lead to the emitter, a high resistance reading would indicate

A. npn transistor
B. pnp transistor
C. germanium transistor
D. silicon transistor

A

B. pnp transistor

189
Q

Transistors of heavy duty construction

A. high-power devices
B. low-power devices
C. medium-power devices
D. all of the above

A

A. high-power devices

190
Q

On a voltage-current condition curve, the point belong to which a further increase in voltage produces no (or very little) further increase in current.

A. saturation flux
B. saturation value
C. saturation point
D. all of the above

A

C. saturation point

191
Q

It is applied to any system where levels have reached their maximum values

A. saturation
B. active
C. cutoff
D. quiescent point

A

A. saturation

192
Q

For an “on” transistor, the voltage VBE should be in the neighborhood of

A. 0.3 V
B. 0.55 V
C. 0.7 V
D. 1.7 V

A

C. 0.7 V

193
Q

Among the three characteristics of a transistor amplifier, which region is normally employed for linear (undistorted) amplifiers?

A. active region
B. cutoff region
C. saturation region
D. capital region

A

A. active region

194
Q

In the active region, the collector-base junction is ________, while the base-emitter junction is ________.

A. forward and forward-biased
B. forward and reverse-biased
C. reverse and reverse biased
D. reverse and forward-biased

A

D. reverse and forward-biased

195
Q

It is necessary, in order to establish the proper region of operation for ac amplification.

A. ac biasing
B. dc biasing
C. A and B above
D. none of the above

A

B. dc biasing

196
Q

At cutoff region, the collector-base and base-emitter junctions of a transistor are

A. both reverse-biased
B. forward and reverse-biased
C. both forward-biased
D. reverse and forward-biased

A

A. both reverse-biased

197
Q

In saturation region, the collector-base and base-emitter junctions of a transistor are

A. both reverse-biased
B. forward and reverse-biased
C. both forward-biased
D. reverse and forward-biased

A

C. both forward-biased

198
Q

If the base-emitter junction is reverse biased and the base-collector junction is forward biased, the transistor will be at what region of operation?

A. active region
B. cut-off region
C. saturation region
D. breakdown region

A

B. cut-off region

199
Q

Under what region does the transistor operate if both the base-emitter and base-collector junctions are reverse-biased?

A. active region
B. cut-off region
C. saturation region
D. breakdown region

A

B. cut-off region

200
Q

What region the transistor should be operating to have minimum distortion at the output signal?

A. active region
B. cut-off region
C. saturation region
D. none of the above

A

A. active region

201
Q

In dc biasing, it means quiet, still, inactive

A. passive
B. quench
C. static
D. quiescent

A

D. quiescent

202
Q

The transistor terminal that handles most current

A. base
B. collector
C. emitter
D. collector and emitter

A

C. emitter

203
Q

Which indicates the degree of change, in operating-point due to temperature variation in the dc biasing?

A. temperature coefficient
B. factor of safety
C. merit factor
D. stability factor

A

D. stability factor

204
Q

What best describes the transistor current that flows between the collector and emitter terminals when the base is open?

A. leakage current
B. cut-off current
C. reverse saturation current
D. all of the above

A

B. cut-off current

205
Q

Solve for the base current if collector current is 600 mA and the current gain is 20.

A. 30 mA
B. 3 mA
C. 12 mA
D. 1.2 mA

A

A. 30 mA

206
Q

When the transistor is saturated, VCE is approximately

A. 0 V
B. ½ VCC
C. VCC
D. infinite

A

A. 0 V

207
Q

Collector-emitter resistance of ideal transistor at cut-off

A. 0 Ω
B. infinite
C. a function of the load resistance
D. a function of the collector current

A

B. infinite

208
Q

The leakage current that flows at the collector-base junction when the emitter is open

A. ICO
B. ICBO
C. ICEO
D. ICBE

A

B. ICBO

209
Q

A transistor with β = 100 is connected as common base, was found to have a leakage current ICBO = 1µA. If the transistor is configured as common emitter, what is the approximate value of its ICEO?

A. 0.01 µA
B. 1.0 µA
C. 100 µA
D. 10 mA

A

C. 100 µA

210
Q

The most correct technical term of the reverse leakage current that flows between the collector and base junctions when the emitter is open circuited.

A. leakage current
B. saturation current
C. reverse saturation current
D. cut-off current

A

C. reverse saturation current

211
Q

How is the collector cut-off or reverse saturation current ICBO related to the emitter cut-off current IEBO?

A. ICBO β IEBO p
B. ICBO IEBO/β
C. ICBO IEBO(1-α)
D. ICBO IEBO

A

D. ICBO IEBO

212
Q

ICBO of an ideal transistor

A. increases as temperature increases
B. increases as temperature decreases
C. is not affected by a temperature change
D. is zero (0) mA

A

D. is zero (0) mA

213
Q

The maximum voltage that can be applied across the collector-emitter terminal for a given transistor is specified as

A. VCEO
B. VECO
C. V(BR)BEO
D. V(BR)CEO

A

D. V(BR)CEO

214
Q

If the current-gain-bandwidth product of transistor is 250 MHz and is operated at 100 MHz, what is the effective current gain of the transistor?

A. 2.5
B. 25
C. 250
D. 350

A

A. 2.5

215
Q

The current gain of a transistor decreases as the operating frequency increases. As the operating frequency is increased continuously, a point occurs where the current gain becomes unity. This point, is best described by what transistor parameter?

A. unity gain frequency
B. 0 dB frequency
C. cut-off frequency
D. unity gain bandwidth product or unity current gain bandwidth product

A

D. unity gain bandwidth product or unity current gain bandwidth product

216
Q

When base is common to both the input and output sides of the configuration and is usually the terminal closes to, or at ground potential, it is called what?

A. common-emitter terminology
B. common-collector terminology
C. common-base terminology
D. all of the these

A

D. all of the these

217
Q

Which transistor configuration has the highest input resistance?

A. common base
B. common emitter
C. common collector
D. common transistor

A

C. common collector

218
Q

One of the following amplifier characteristic refers to that of a common-base (C-B) as compared to common-emitter (C-E) and common-collector (C-C) amplifiers.

A. Has larger current gain
B. Has lower input resistance
C. Has higher input resistance
D. Has larger voltage gain

A

B. Has lower input resistance

219
Q

A transistor is said to be configured as common emitter if the emitter terminal is

A. grounded
B. connected to V+
C. floating
D. not used as an input nor output

A

D. not used as an input nor output

220
Q

Most frequently used transistor configuration for pnp and npn

A. common-base
B. common-collector
C. common-emitter
D. A and C above

A

C. common-emitter

221
Q

Calculate the common-emitter amplification factor β of a transistor with a common-base amplification factor α=0.99.

A. 10
B. 50
C. 100
D. 200

A

C. 100

222
Q

Which transistor configuration hybrid parameters, that is usually specified by the manufacturers?

A. for common-base
B. for common-collector
C. for common-emitter
D. a combination of the three configurations

A

C. for common-emitter

223
Q

For a common-emitter transistor configuration, the hybrid parameter hfe stands for forward transfer current ratio. This parameter is approximately equal to

A. HFE
B. βac
C. β
D. all of the above

A

D. all of the above

224
Q

Hybrid parameter that is usually neglected in circuit analysis

A. hi and ho
B. hr and hf
C. hi and hf
D. hr and ho

A

D. hr and ho

225
Q

The input impedance of a common-base configuration is hib, and its magnitude is approximately equal to

A. hie/hfe
B. hie/(1+β)
C. re for dynamic model
D. all of these

A

D. all of these

226
Q

In most transistor input equivalent circuit it comprises of a resistor and a

A. voltage source
B. stiff voltage source
C. current source
D. stiff current source

A

A. voltage source

227
Q

Which transistor configuration has the highest input resistance?

A. common-base
B. common-collector
C. common-emitter
D. emitter follower

A

B. common-collector

228
Q

Common-base configuration has a high voltage gain and a current gain of

A. low
B. moderate
C. high
D. approximately equal to one (1)

A

D. approximately equal to one (1)

229
Q

Common-collector has the lowest power gain and a voltage gain of approximately one. In contrast to this, what configuration has the highest power gain?

A. common-base
B. common-collector
C. common-emitter
D. emitter follower

A

C. common-emitter

230
Q

Which of the following transistor characteristic curves that is most useful?

A. input characteristic curve
B. output characteristic curve
C. transfer characteristic curve
D. all of the above

A

B. output characteristic curve

231
Q

The graph of the product of collector-emitter voltage VCE and collector current IC in the transistor output characteristic curve.

A. maximum power curve
B. minimum power curve
C. saturation power curve
D. breakdown curve

A

A. maximum power curve

232
Q

The base of a transistor serves a purpose to what element of the FET?

A. source
B. ground
C. substrate
D. gate

A

D. gate

233
Q

What is the primary difference between the BJT and the FET?

A. current-controlled device and voltage-controlled device, respectively
B. voltage-controlled device and current-controlled device, respectively
C. impedance transformed device and conductance transformed device, respectively
D. A and C above are correct

A

A. current-controlled device and voltage-controlled device, respectively

234
Q

Another difference between a BJT and a FET with regards to its normal biasing.

A. The input circuit is forward-biased for BJT while reverse for FET.
B. The input circuit is reverse-biased for BJT while forward for FET.
C. The output circuit is forward-biased for BJT while reverse for FET.
D. The output circuit is reverse-biased for BJT while forward for FET.

A

A. The input circuit is forward-biased for BJT while reverse for FET.

235
Q

Field-effect transistors (FETs) offer high input impedance than BJT. What makes FETs have high input impedance?

A. The way FETs are constructed.
B. Because of the materials used.
C. Due to the level of doping
D. Due to the reverse-biased input circuit of FETs

A

D. Due to the reverse-biased input circuit of FETs

236
Q

The operation of BJT involves both the flow of electrons and holes and is therefore, considered as a bipolar device. Unlike BJT, FET’s operation involves only either electrons or holes and is considered as a _________ device.

A. single polar
B. unipolar
C. unpolar
D. polarized

A

B. unipolar

237
Q

Considered as the basic FET or the simplest form of FET

A. JFET
B. MOS-FET
C. IGFET
D. VMOS-FET

A

A. JFET

238
Q

Junction field effect transistor or JFET has three terminals, which corresponds to the E-B-C of the BJT?

A. D-S-G
B. D-G-S
C. S-G-D
D. S-D-G

A

C. S-G-D

239
Q

One obvious advantage of a JFET over BJT is its

A. high voltage gain
B. high current gain
C. high input resistance
D. high output resistance

A

C. high input resistance

240
Q

A BJT is a current-controlled current-source device while JFET is a _________ device.

A. current-controlled voltage-source
B. voltage-controlled voltage-source
C. voltage-controlled current-source
D. voltage-controlled transconductance-source

A

C. voltage-controlled current-source

241
Q

What do you call the area in a JFET where current passes as it flows from source (S) to drain (D).

A. channel
B. substrate
C. depletion
D. drift

A

A. channel

242
Q

What will happen to the channel of a JFET as current flows to it?

A. widens
B. narrows
C. skews
D. nothing

A

C. skews

243
Q

For a normal operation of an n-channel JFET, how do you bias the gate-source junction?

A. positive-negative respectively
B. negative-positive respectively
C. forward-biased
D. any of the above

A

B. negative-positive respectively

244
Q

The voltage across the gate-source terminal of a FET that causes drain current ID equal to zero.

A. saturation voltage
B. threshold voltage
C. cut-off voltage
D. pinch-off voltage

A

D. pinch-off voltage

245
Q

The current that flows into the channel of a JFET when the gate-source voltage is zero.

A. drain-source saturation current
B. drain-source cut-off current
C. drain-source leakage current
D. drain-source pinch-off current

A

A. drain-source saturation current

246
Q

The graph of the drain current ID versus drain-source voltage VDS with VGS as the parameter.

A. transfer characteristic curve
B. output characteristic curve
C. input characteristic curve
D. current-voltage characteristic curve

A

D. current-voltage characteristic curve

247
Q

In FET, the conduction path of the output is controlled by the electric field as its name implies. How does an electric field in FET established?

A. By the charges present at the gate due to the reverse-biased junction.
B. By the application of reverse-biased between the gate and drain.
C. By the charges produced due to the applied potential between drain and source VDS.
D. By the charges present at each terminal due to the applied potential.

A

A. By the charges present at the gate due to the reverse-biased junction.

248
Q

An early version of the field effect transistor in which limited control of current carriers near the surface of a semiconductor bar or film was obtained by an external electric field applied transversely.

A. fieldistor
B. JFET
C. IGFET
D. MOSFET

A

A. fieldistor

249
Q

A FET in which the gate electrode consists of a pn junction

A. JFET
B. fieldistor
C. MOS-FET
D. IGFET

A

A. JFET

250
Q

Which type of FET has the lowest input resistance?

A. JFET
B. MOS-FET
C. IGFET
D. VMOSFET

A
251
Q

In order to increase further the input resistance of a FET, its gate is insulated. An example of this type is the

A. fieldistor
B. JFET
C. MOS-FET
D. A and B above

A

C. MOS-FET

252
Q

What is the insulator used in most MOS-FET?

A. CO2
B. SiO2
C. mica
D. plastic

A

B. SiO2

253
Q

An n-channel JFET has a drain-source saturation current IDSS = 10 mA and a gate-source pinch-off voltage Vp = -4 V. If the applied reverse gate-source voltage VGS = 2 V, calculate the drain current ID.

A. 2.5 mA
B. 5.0 mA
C. 10.0 mA
D. 22.5 mA

A

A. 2.5 mA

254
Q

Base from Shockley’s equation of a JFET, what is the drain current when the applied voltage VGS is exactly equal to the pinch-off voltage Vp?

A. IDSS
B. maximum
C. minimum
D. zero

A

D. zero

255
Q

The transconductance of a JFET is defined as

A. dID/dVGS
B. dVGS/dID
C. dIDSS/dVGS
D. dID/dVp

A

A. dID/dVGS

256
Q

A field-effect transistor in which the gate electrode is not a pn junction (as in the junction field-effect transistor) but a thin metal film insulated from the semiconductor channel by a thin oxide film.

A. MOSFET (enhancement type)
B. MOSFET (depletion type)
C. IGFET
D. all of the above

A

D. all of the above

257
Q

In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base

A. substrate
B. slab
C. source
D. base

A

A. substrate

258
Q

A type of MOSFET wherein originally there is no channel between the drain and the source

A. depletion type
B. enhancement type
C. break type
D. insulated type

A

B. enhancement type

259
Q

What type of MOSFET whose channel is originally thick but narrows as the proper gate bias is applied?

A. enhancement
B. depletion
C. transverse
D. all of the above

A

B. depletion

260
Q

The amount of voltage needed at the gate-source terminal for an enhancement type MOSFET so that a channel can be formed for the current to flow.

A. “ON” voltage
B. pinch-off voltage
C. threshold voltage
D. trigger voltage

A

C. threshold voltage

261
Q

To switch off the depletion type MOSFET, the channel should be depleted. Depletion of the channel is done by applying enough voltage across the gate-source terminal. What do you call this voltage?

A. pinch-off voltage
B. trigger voltage
C. holding voltage
D. threshold voltage

A

A. pinch-off voltage

262
Q

The substrate of a MOSFET is usually connected internally to

A. source
B. gate
C. drain
D. channel

A

A. source

263
Q

In an n-channel enhancement type MOSFET, the gate voltage should be ________ with respect to the source in order to produce or enhance a channel.

A. the same
B. positive
C. negative
D. either positive or negative

A

B. positive

264
Q

To deplete a channel from a p-channel IGFET depletion type, the gate voltage should be ________ with respect to the source.

A. the same
B. positive
C. negative
D. either positive or negative as long as it is greater

A

B. positive

265
Q

The substrate used in a p-channel IGFET enhancement type

A. n -type material
B. n+ -type material
C. p -type material
D. p+ -type material

A

A. n -type material

266
Q

The base material of a MOSFET which extends as an additional terminal

A. source (S)
B. channel (C)
C. drain (D)
D. substrate (SS)

A

D. substrate (SS)

267
Q

Which FET that has a substrate?

A. MOSFET enhancement type
B. IGFET
C. MOSFET depletion type
D. all of the above

A

D. all of the above

268
Q

What is the difference between a JFET and a MOSFET?

A. The gate of a MOSFET is insulated.
B. MOSFET uses a substrate in its construction.
C. MOSFET can work in both forward and reverse gate-source voltages.
D. all of the above

A

D. all of the above

269
Q

Calculate the transconductance of a p-channel MOSFET enhancement type if the gate-source voltage VGS = -8 V, threshold voltage VT = -4 and a constant k = 0.3 mA/V2.

A. 1.2 mS
B. 2.4 mS
C. 3.6 mS
D. 7.2 mS

A

B. 2.4 mS

270
Q

One drawback of JFET devices is the strong dependence of the devices’ parameters on the channel geometry. Which parameter is an example of this?

A. drain saturation current (IDSS)
B. pinch-off voltage (VP)
C. transconductance (gm)
D. all of the above

A

D. all of the above

271
Q

JFET cutoff frequency is dependent on channel length by a factor of

A. 1/L
B. 1/L2
C. 1/L3
D. 1/L4

A

B. 1/L2

272
Q

Which FET operates as close as BJT in terms of switching?

A. JFET
B. MOSFET depletion type
C. MOSFET enhancement type
D. IGFET

A

C. MOSFET enhancement type

273
Q

Generally, MOSFET has low power handling capability than BJT. To increase MOSFET power, the channel should be made

A. narrow and long
B. narrow and short
C. wide and long
D. wide and short

A

D. wide and short

274
Q

Which FET has a wide and short effective channel?

A. JFET
B. MOSFET
C. IGFET
D. V-MOSFET

A

D. V-MOSFET

275
Q

A type of FET wherein the channel is formed in the vertical direction rather than horizontal

A. JFET
B. MOSFET
C. IGFET
D. V-MOSFET

A

D. V-MOSFET

276
Q

Advantage or advantages of V-MOS over BJT

A. No stored charge and therefore faster in switching action.
B. A negative temperature dependence of output current which eliminates thermal runaway.
C. High input impedance and therefore high current gain.
D. all of the above

A

D. all of the above

277
Q

In general, which of the transistors is particularly more useful in integrated-circuit (IC) chips?

A. BJTs
B. FETs
C. UJTs
D. all of the above

A

B. FETs

278
Q

A monolithic semiconductor-amplifying device in which a high-impedance GATE electrode controls the flow of current carriers through a thin bar of semiconductor called the CHANNEL. Ohmic connections made to the ends of the channel constitute SOURCE and DRAIN electrodes.

A. BJT
B. UJT
C. FET
D. UPT

A

C. FET

279
Q

A junction field effect transistor has a drain saturation current of 10 mA and a pinch-off voltage of -4 V. Calculate the maximum transconductance.

A. 2.5 mS
B. 5.0 mS
C. 25.0 mS
D. 50.0 mS

A

B. 5.0 mS

280
Q

In semiconductor application, which of the following statement is not true?

A. An ohmmeter test across the base-collector terminal of a transistor should show low resistance in one polarity and high resistance in the opposite polarity.
B. A triac is a bidirectional device.
C. An ohmmeter test across a diode shows low resistance in one polarity and high resistance in the opposite polarity.
D. An ohmmeter test across the base-collector of a transistor should show low resistance for both polarities.

A

D. An ohmmeter test across the base-collector of a transistor should show low resistance for both polarities.

ELECS 3 (8 decks)

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