REM B LVL 1 Flashcards
Assertion (A): Silicon is less sensitive to
changes in temperature than
germanium.
Reason (R): It is more difficult to
produce minority carriers in silicon than
in germanium.
A. A is false but R is true
B. Both A and R are true but R is not a correct
explanation of A
C. Both A and R are true and R is correct
explanation of A
C. Both A and R are true and R is correct
explanation of A
Assertion (A): The conductivity of p type
semiconductor is higher than that of
intrinsic semiconductor.
Reason (R): The addition of donor
impurity creates additional energy levels
below conduction band.
A. A is false but R is true
B. A is true but R is false
C. Both A and R are true and R is correct
explanation of A
D. Both A and R are true but R is not a
correct explanation of A
D. Both A and R are true but R is not a
correct explanation of A
Which of the following is true for
Pentavalent impurities?
A. Have three valence electrons
B. Introduce holes when added to a
semiconductor material
C. Increase the conduction of a
semiconductror material
C. Increase the conduction of a
semiconductror material
When a diode in a center-tapped
rectifier opens, the output is
A. unaffected
B. 0V
C. half-wave rectified
C. half-wave rectified
What band is characterized by the
existence of the forbidden band narrow
enough to allow terminal transition in
the next allowed band?
A. Conductor
B. Plasma
C. Inductor
A. Conductor
A semiconductor diode is biased in
forward direction and carrying current I.
The current due to holes in p material is
A. less than I
B. 0
C. 0.5
A. less than I
Assertion (A): When a photoconductive
device is exposed to light, its bulk
resistance increases.
Reason (R): When exposed to light,
electron hole pairs are generated in the
photoconductive device.
A. A is true but R is false
B. Both A and R are true but R is not a correct
explanation of A
C. A is false but R is true
C. A is false but R is true
Fig. 8-12-5-A6 represents a…
(REM ELEX B LVL 1 FIGURE)
Fig. 8-12-5-A6
A. Varistor
B. Schottky diode
C. None of these choices
D. Diode rectifier
B. Schottky diode
If the capacitor from emitter to ground
in a Common Emitter amplifier is
removed, the voltage gain
A. increases
B. becomes erratic
C. decreases
D. is not affected
C. decreases
The SI units of transconductance is
A. Ohm
B. Volt/ ampere
C. Ampere/ volt
C. Ampere/ volt
In a common-emitter (CE) amplifier, the
capacitor from emitter to ground is
called the ___ capacitor.
A. tuning
B. coupling
C. bypass
D. decoupling
C. bypass
Which of the following models of diode equivalent circuit is represented by the given I-V characteristic curve?
(REM ELEX B LVL 1 FIGURE)
A. Hybrid model
B. Simplified Model
C. Ideal Diode Model
D. Piecewise Linear Model
B. Simplified Model
In simplified model, the value of rd is
neglected and hence, we get a high
value of current for voltage greater than
or equal to VT.
In a regulated supply, what term
describes how much change occurs in the output voltage for a given change in the input voltage?
A. ripple voltage
B. load regulation
C. line regulation
D. voltage regulator
C. line regulation
During the positive half-cycle of the
input voltage in a bridge rectifier,
A. two diodes are forward-biased
B. all diodes are forward-biased
C. all diodes are reverse-biased
A. two diodes are forward-biased
A Zener diode is in a ___
impedance region in the forward bias
while it has a ___ impedance region
in the reverse bias.
A. very large, low
B. low, low
C. very large, very large
D. low, very large
D. low, very large
Typical values of voltage amplification
for the common-base configurations
vary from ___ and the current gain
is always ___
A. 50 to 300, larger than 1
B. 50 to 300, less than 1
C. larger than 1, 50 to 300
B. 50 to 300, less than 1
The full-wave voltage doubler provides
___ filtering action than (as) the
half-wave voltage doubler.
A. None of these choices
B. better
C. poorer
B. better
In a voltage regulator network with fixed
RL and R, what element dictates the
minimum level of source voltage?
A. Vz
B. Iz
C. Tz
A. Vz
If the base current of a transistor
operates in the linear region increases,
the collector current ___ and the
emitter current ___
A. Decreases, decreases
B. Increases, increases
C. Increases, decreases
D. Increases, does not change
B. Increases, increases
In a PNP circuit, the collector:
A. Has an arrow pointing inward
B. Is biased at a small fraction of the base
bias
C. Is positive with respect to the emitter
D. Is negative with respect to the emitter
D. Is negative with respect to the emitter
In normal operation an n-p-n transistor
connected in common-base
configuration has
A. the collector at a lower potential than the
emitter
B. the emitter at a lower potential than the
base
C. the base at a lower potential than the
emitter
B. the emitter at a lower potential than the
base
In Fig. Fig. 12-5-9-A5.If R_E short-
circuited:
(REM ELEX B LVL 1 FIGURE)
Fig. 12-5-9-A5
A. the load line would be affected
B. the load line would be unaffected
C. neither the load line would be unaffected
and the load line would be affected
D. both the load line would be unaffected and
the load line would be affected
A. the load line would be affected
The most stable biasing technique used
is the
A. collector bias.
B. voltage-divider bias.
C. base bias.
B. voltage-divider bias.
The output, V-I characteristics of an
Enhancement type MOSFET has
A. only a saturation region
B. an ohmic region at low voltage value
followed by a saturation region at
higher voltages
C. only an ohmic region
B. an ohmic region at low voltage value
followed by a saturation region at
higher voltages
The input resistance of the base of a
voltage-divider biased transistor can be
neglected
A. only if the base current is much larger than
the current through R2 (the lower bias
resistor).
B. only if the base current is much smaller than the current through R2 (the lower bias resistor).
C. at all times.
B. only if the base current is much smaller than the current through R2 (the lower bias resistor).
How many individual pnp silicon
transistors can be housed in a 14-pin
plastic dual-in-line package?
A. 4
B. 14
C. 10
A. 4
Assertion (A): In a BJT, the base region
is very thick.
Reason (R): In p-n-p transistor most of
holes given off by emitter diffuse
through the base.
A. A is true but R is falseA is false but R is
true
B. A is false but R is true
C. Both A and R are true and R is correct
explanation of A
C. Both A and R are true and R is correct
explanation of A
For which of the following frequency region(s) can the coupling and bypass capacitors no longer be replaced by the short-circuit approximation?
A. Low-frequency
B. All of these choices
C. Mid-frequency
A. Low-frequency