Key Topic 5: Semi-conductors

Question 1

3-5A1: What are the two most commonly-used specifications for a junction diode?

A. Maximum forward current and capacitance.
B. Maximum reverse current and PIV (peak inverse voltage).
C. Maximum reverse current and capacitance.
D. Maximum forward current and PIV (peak inverse voltage).

Answer 1

D. Maximum forward current and PIV (peak inverse voltage).

Question 2

3-5A2: What limits the maximum forward current in a junction diode?

A. The peak inverse voltage (PIV).
B. The junction temperature.
C. The forward voltage.
D. The back EMF.

Answer 2

B. The junction temperature.

Question 3

3-5A3: MOSFETs are manufactured with THIS protective device built into their gate to protect the device from static charges and excessive voltages:

A. Schottky diode.
B. Metal oxide varister (MOV).
C. Zener diode.
D. Tunnel diode.

Answer 3

C. Zener diode.

Question 4

3-5A4: What are the two basic types of junction field-effect transistors?

A. N-channel and P-channel.
B. High power and low power.
C. MOSFET and GaAsFET.
D. SILICON FET and germanium FET.

Answer 4

A. N-channel and P-channel.

Question 5

3-5A5: A common emitter amplifier has:

A. Lower input impedance than a common base.
B. More voltage gain than a common collector.
C. Less current gain than a common base.
D. Less voltage gain than a common collector.

Answer 5

B. More voltage gain than a common collector.

Question 6

3-3A6: How does the input impedance of a field-effect transistor compare with that of a bipolar transistor?

A. An FET has high input impedance; a bipolar transistor has low input impedance.

B. One cannot compare input impedance without first knowing the supply voltage.

C. An FET has low input impedance; a bipolar transistor has high input impedance.

D. The input impedance of FETs and bipolar transistors is the same.

Answer 6

A. An FET has high input impedance; a bipolar transistor has low input impedance.