chapter 1 Flashcards

1
Q

If an excess reverse bias voltage is applied to a PN junction, the resistance drops rapidly resulting in a high current flow that destroys the junction.

A

true

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2
Q

In today’s AC and DC electricity, all material can be classified as ? .

A

conductors
insulators
semiconductors

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3
Q

Materials with atoms that allow the electrons in the outer valance ring to be pulled away easily make good ? .

A

conductors

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4
Q

Which of the following materials is not commonly used either in pure form or mixed form for conductors?

A

Nickel

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5
Q

Materials with atoms that strongly resist their electrons from being pulled away are called ? .

A

insulators

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6
Q

Devices like diodes, transistors, and integrated circuits (ICs) are made of ? materials.

A

semiconductor

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7
Q

What is/are the most common semiconductor material(s) used in semiconductor devices today?

A

Germanium

silicon

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8
Q

The doping process includes adding impurities to a pure material to help it conduct.

A

true

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9
Q

Before the doping process, the pure semiconductor material is said to be in its ? form.

A

Intrinsic

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10
Q

After the doping process, the modified semiconductor material is said to be in its ? form.

A

extrinsic

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11
Q

A P-type semiconductor forms when a doping material with an excess of free electrons is added to a pure semiconductor crystal.

A

false

A P-type semiconductor forms when a doping material with a deficiency of free electrons is added to a pure semiconductor crystal.

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12
Q

N-type semiconductors have been doped with a material that has a deficiency of free electrons.

A

False

N-type semiconductors have been doped with a material that has an excess of free electrons.

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13
Q

A deficiency of free electrons is also known as an excess of free holes.

A

true

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14
Q

Which of the following are examples of N-type doping elements?

A

Antimony
Arsenic
Phosphorus

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15
Q

Which of the following are examples of P-type doping elements?

A

Aluminum
Boron
Gallium
Indium

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16
Q

Current flow through N-type material is electron flow; current flow through P-type material is hole flow.

A

true

17
Q

The area affected by the combining of holes and electrons is called the ? region.

A

Depletion

18
Q

During reverse biasing, the depletion region widens, allowing current flow.

A

False

19
Q

What is the approximate barrier voltage of silicon-constructed PN junction?

A

0.5 - 0.7

20
Q

The voltage at which a reverse biased junction is destroyed is called ? .

A

Avalanche voltage
peak inverse voltage
reverse breakdown voltage

21
Q

The width of the depletion region can be altered by varying the amount of ? voltage.

A

bias

22
Q

The bias voltage changes the width of the PN junction’s depletion region and, therefore, also changes its ? .

A

resistance

23
Q

The PN junction conducts when it is reverse biased and does not when it is forward biased.

A

False

The PN junction conducts when it is forward biased and does not when it is reverse biased.

24
Q

The typical amount of external voltage required to forward bias a germanium (Ge) junction is ? .

A

0.3v

25
Q

The typical amount of external voltage required to forward bias a silicon (Si) junction is ? .

A

0.7v