chapter 1 Flashcards
If an excess reverse bias voltage is applied to a PN junction, the resistance drops rapidly resulting in a high current flow that destroys the junction.
true
In today’s AC and DC electricity, all material can be classified as ? .
conductors
insulators
semiconductors
Materials with atoms that allow the electrons in the outer valance ring to be pulled away easily make good ? .
conductors
Which of the following materials is not commonly used either in pure form or mixed form for conductors?
Nickel
Materials with atoms that strongly resist their electrons from being pulled away are called ? .
insulators
Devices like diodes, transistors, and integrated circuits (ICs) are made of ? materials.
semiconductor
What is/are the most common semiconductor material(s) used in semiconductor devices today?
Germanium
silicon
The doping process includes adding impurities to a pure material to help it conduct.
true
Before the doping process, the pure semiconductor material is said to be in its ? form.
Intrinsic
After the doping process, the modified semiconductor material is said to be in its ? form.
extrinsic
A P-type semiconductor forms when a doping material with an excess of free electrons is added to a pure semiconductor crystal.
false
A P-type semiconductor forms when a doping material with a deficiency of free electrons is added to a pure semiconductor crystal.
N-type semiconductors have been doped with a material that has a deficiency of free electrons.
False
N-type semiconductors have been doped with a material that has an excess of free electrons.
A deficiency of free electrons is also known as an excess of free holes.
true
Which of the following are examples of N-type doping elements?
Antimony
Arsenic
Phosphorus
Which of the following are examples of P-type doping elements?
Aluminum
Boron
Gallium
Indium
Current flow through N-type material is electron flow; current flow through P-type material is hole flow.
true
The area affected by the combining of holes and electrons is called the ? region.
Depletion
During reverse biasing, the depletion region widens, allowing current flow.
False
What is the approximate barrier voltage of silicon-constructed PN junction?
0.5 - 0.7
The voltage at which a reverse biased junction is destroyed is called ? .
Avalanche voltage
peak inverse voltage
reverse breakdown voltage
The width of the depletion region can be altered by varying the amount of ? voltage.
bias
The bias voltage changes the width of the PN junction’s depletion region and, therefore, also changes its ? .
resistance
The PN junction conducts when it is reverse biased and does not when it is forward biased.
False
The PN junction conducts when it is forward biased and does not when it is reverse biased.
The typical amount of external voltage required to forward bias a germanium (Ge) junction is ? .
0.3v
The typical amount of external voltage required to forward bias a silicon (Si) junction is ? .
0.7v
