Week 1: Semiconductor Fundamentals Flashcards

1
Q

What is the probability of thermal excitation proportional to?

A

e^(-E_g / k_b * T)

where k_b is Boltzmann constant, T is temperature in Kelvin, and E is the band gap energy

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2
Q

What is the conduction band?

A

The highest unoccupied band

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3
Q

What is the valence band?

A

the highest occupied level at zero Kelvin

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4
Q

What is a semiconductor?

A

A semiconductor is a special kind of insulator whose band gap is small enough (< 2-3eV) to excite electrons across this gap at room temperature.

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5
Q

Semiconductors sometimes behave like insulators and sometimes behave like conductors. What is modulated to take advantage of this?

A

The carrier density

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6
Q

What is the density of states used for?

A

The density of states is used for finding the number of electrons per volume in the conduction band and the number of electrons per volume in the valence band

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7
Q

What is the density of states?

A

The density of states is the number of states that are available for electrons and holes at a given energy, E + dE

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8
Q

What is g(E) representing? What happens when you multiply it by an infinitesimally small dE slice of energy?

A

g(E) represents the number of states per volume per energy; multiplying by dE slice leaves you with the the number of states per volume

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9
Q

What is the spin degeneracy?

A

The fact that for a given state we can have a spin up and a spin down electron.

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10
Q

What does the carrier density control?

A

The carrier density controls the current and is responsible for whether the semiconductor can emit light or not.

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11
Q

Describe the probability of occupation in terms of E and f(E).

A

E is the energy. You can plot E on the y axis and f(E), the probability of finding an electron, on the x axis. At higher energies, the probability f(E) is almost zero. At lower energies the probability increases and at 0 energy, f(E) = 1.

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12
Q

Electrons are considered to be fermions. What does this mean for the principle they obey?

A

This means they obey the Pauli exclusion principle meaning that each electron has to have a unique state.

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13
Q

What do holes in the valence band correspond to?

A

Empty states in the valence band

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14
Q

How is the carrier density in a semiconductor obtained?

A

By integrating the product of the density of states and the probability density function over all possible states

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15
Q

How would you calculate the electron density at a given temperature for a semiconductor?

A

N(T) = integralE_c to inf

g_c(E): density of states in conduction band
f(E): probability of occupation

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16
Q

How would you calculate the hole density at a given temperature for a semiconductor?

A

P(T) = integral-inf to E_v

g_v(E): density of states in valence band
f(E): probability of occupation

17
Q

What is the probability of finding an electron (from the Fermi-Dirac statistics)?

A

f(E) = 1 / (1 + exp(E - E_f / k_b * T)

where E_f is the fermi level, the place where the probability of finding an electron is 50%

18
Q

Explain the non-degeneracy condition and what it allows us to do.

A

The non-degeneracy condition means that the fermi level never gets too close to the conduction or the valence band.

E_c - E_f&raquo_space; k_b * T
E_f - E_v&raquo_space; k_b * T

k_b * T is the approximate thermal energy an electron will have at a given temperature.

This allows us to take the fermi dirac statistics and approximate them by classical statistics.

19
Q

What can we approximate f(E) to be with the non-degeneracy condition? What about 1-f(E)? What’s the benefit of this?

A

We can approximate f(E) to be ~= exp(- (E - E_f) / k_b * T) and this is true for E > E_c.

1-f(E) can be approximated as ~= exp(- (E_f - E)/k_b * T) where E < E_v

This allows us to come up with analytic expressions for our density integrals.

20
Q

How do we use the parabolic bands assumption to simplify the integrals for the density of electrons and density of holes as functions of temperature?

A

We use the parabolic bands assumption that the carriers are very close to the band edges. Parabolic bands assumption allows us to integrate the N_v(T) and N_c(T) integrals exactly.

We can rewrite them as:

N(T) = N_c(T) exp(- (E_c - Ef)/ k_b * T)

P(T) = N_v(T) exp (- (E_f - E_v)/ k_b * T)

Where N_c(T) is the density of states in the conduction band and N_v(T) is the density of states in the valence band.

21
Q

Using the parabolic band approximation, what is the result of evaluating N_v(T) and N_c(T)?

A

N_c(T) = (1/4) (2(m_c)k_bT/pi*h_bar^2) ^ (3/2)

N_v(T) = (1/4) (2(m_v)k_bT/pi*h_bar^2) ^ (3/2)

22
Q

What relationship does the law of mass action give us for N(T) and P(T)? How would we find the intrinsic carrier density from this?

A

N(T)*P(T) = N_c * N_v * exp(- E_g / k_b * T)

The intrinsic carrier density, N_i, is equal to N(T)*P(T) so we have that:

N_i^2 = N_c * N_v * exp(-E_g / 2 * k_b * T)

23
Q

What’s an intrinsic semiconductor and what does it tell us about the electron concentration, hole concentration, and intrinsic carrier concentration?

A

A semiconductor we have done nothing to. It tells us that N(T) = p(T) = n_i(T), so they’re all equal.

24
Q

Describe two equations that can be used to calculate the fermi level of an intrinsic semiconductor.

A

E_f = E_v + (1/2)E_g + (1/2)k_bTln(N_v/N_c)

E_f = E_v + (1/2)E_g + 3/4k_bTln(m_v/m_c*)

25
Q

What is an extrinsic semiconductor?

A

A semiconductor where impurities have been deliberately introduced and the electron densities and hole densities will be determined by the impurity type and density.

26
Q

We treat impurities as an additional charge. What is a donor? What is an acceptor?

A

A donor is an atom who gives up an electron and leaves itself with positive charge. An acceptor takes an electron creating a hole and leaves itself with a negative charge.

27
Q

What is n doping and how would you calculate the fermi level in the case of n doping?

A

N-doping is doping with electrons making it electron rich.

E_f = E_i + k_bTln(N_D / n_i)
OR
E_c - E_f = k_bTln(N_c/N_D)

n_i is the intrinsic concentration
N_D is the electron concentration for an n-doped material

28
Q

What is p doping and how would you calculate the fermi level in the case of p doping?

A

P-doping is making the semiconductor hole rich.

E_f = E_i - k_b * T *ln(N_A/n_i)

E_f - E_v = k_b * T * ln (N_v/N_A)

N_A is the hole concentration
N_i is the intrinsic concentration

29
Q

How would you calculate the donor energy?

A

E_d = [(m_c*/m_o)(epsilon_o/epsilon_s)^2) * 13.6eV]

epsilon_o: permittivity of free space
epsilon_s: permittivity of the lattice

13.6eV is the energy level of a hydrogen atom and this is what we use to model energy levels of lone electrons.

30
Q

What is the expression for carrier densities at thermal equilibrium? How do we get this expression?

A

This expression is obtained because at thermal equilibrium, charge neutrality must be obeyed. This means the negative charge in the semiconductor must equal the positive charge.

N_c + N_D + N_A = N_D + P_v + P_A

31
Q

How do you simplify the charge neutrality expression for the case of fully ionized impurities?

A

If fully ionized impurities we can simplify to:

N_c + N_A = N_D + P_v

32
Q

What region of N do we like to operate in?

A

We like to operate in the region where the semiconductor is behaving like an extrinsic or doped semiconductor. This is where N = N_D, meaning all donors are fully ionized. This is because in this region, we only need to give the semiconductor a little bit of energy to get it to operate. This is generally the medium temperature zone.

33
Q

How does the intrinsic carrier density compare to the size of the band gap?

A

The larger the band gap, the smaller the intrinsic carrier density.