VLSI Presentation Flashcards
VLSI
Very large scale integrated circuits
Process
Sequence of steps that will be performed to fabricate the IC
Technology
The foundry process and the associated design rules
Process are often identified by
Trade name
Types of devices they can be used to make
Characteristic feature size
Trade name
ON semi’s C5 process
Device type
NMOS process
PMOS process
CMOS process
BiCMOS process
Feature size
14nm
350nm
Process node
Standardized series of process steps used to fabricate ICs
Terminology used when the process is labeled by its feature size
-Intel’s 32nm process node
Device half-pitch
Distance on the wafer between the feature on a transistor and the same feature on an adjacent transistor
CMOS process
NMOS
- p+ body, n+ source and drain
- p-type substrate
PMOS
-n+ body, p+ source and drain, n-well
Masks
Sent to foundry
Result of EDA flow
Set of masks of each of the process layers
Each of the colored design layers are different masks used separately as inputs to different steps of the process
Photolithography
Si, SiO2, Resist
Shine UV light source, creates mask, remove unprotected photo resist
Negative resist, positive resist, lift off (removes resist), etch back (removes SiO2)
Fabrication
- Grow field oxide
- Etch oxide for pMOSFET
- Diffuse n-well
- Grow gate oxide
- Deposit polysilicon
- Etch polysilicon and oxide
- Implant sources and drains
- Grow nitride
- Etch nitride
- Deposit metal
- Etch metal
Field oxide, gate oxide, polysilicon, nitride, metal
Electronic design automation (EDA)
Software-supported design procedure for turning circuit ideas or block diagrams into the layout files necessary for IC fabrications (PCB fabrication)