Topic 5: Carbon nanotubes Flashcards
1
Q
- Describe the different ways in which carbon nanotubes can be folded
A
- Lattice vectors (a1, a2) affect how tube is rolled up and define roll up vector
- The two extremes of this are zigzag (n, 0) and armchair (n, n)
- Roll determines whether tube will behave as a metal or a semi-conductor electronically (function of chirality of tube)
- For semiconducting tubes, the diameter of the tube will change the band gap
2
Q
- What is a single wall carbon nanotube?
A
- A graphene (sp2 carbons) sheet wrapped in to a tube of around 0.4 nm in diameter
3
Q
(?) How can a SWCNT possess variable electronic structure?
A
- The energy-k dispersion relation for graphene relates the momentum of electrons (p = ħk) and the wave vector of those electrons (k = 2π/ λ)
- Whole # of λ’s for electron wavefunctions confined to circumference of nanotube.
- Momentum states continuously move around section of circumference of tube.
- K vector will take any value along length of tube
- Px propagation is quantised, resulting in slices of overall 2D plot, each defining all possible electron states in CB/VB
- Graphene is a flat sheet, therefore electrons can propagate in 2D
- Electron on axis rolls down PES to minima corresponding hole travels up VB to maxima
- Dirac point are where bands touch
- If passing through a Dirac point, corresponds to a metallic section of the nanotube, but most of the tube is semiconducting.
4
Q
- What is the relationship between chiral indices/roll up vector (n, m) of a SWCNT and its diameter?
A
- d = (aC-C * √3 * (n2 + m2 + nm)0.5)/π
5
Q
- What is the relationship between the band gap of a nanotube and its diameter?
A
- Eg = (2γ0*aC-C)/d
γ0 = tight binding overlap energy
6
Q
- SWCNT has a … carrier mobility x… that of Si, which is … , meaning charges move along length of tube without being scattered
A
- SWCNT has a charge carrier mobility x10 that of Si, which is ballistic, meaning charges move along length of tube without being scattered
7
Q
- Outline two doping methods of semi-conducting nanotubes. WHat is an advantgae and disadvantage of this?
A
- n/p doping can be used to introduce defects
- intercalation of n/p dopant by heating vapour; n/p-type
- defect dangling bond created through σ-bond break, leave trapped π-e- in wall; p-type
- an electron donor/acceptor can be covantly bound (e.g. COOH powerful electron acceptor; p-type
- doping increases conductvity however distrupt conjugtaion, reducing mobility
8
Q
- n/p type forms of doping reduce charge carrier … of SWCNT, what is another method of charge transfer doping that does not have this result?
A
- n/p type forms of doping reduce charge carrier mobility of SWCNT,
- Adsorb TCNQ on to SWCNT surface
- TCNQ significantly reduces the hole injection barrier as is a powerful electron acceptor with a very low LUMO, allowing spontaneous charge to transfer to occur
9
Q
- Unlocking full potential of SWCNT lies in synthesis of only one … type (… or … ) thereby forming a … … … structure.
A
- Unlocking full potential of SWCNT lies in synthesis of only one electronic type (semiconducting or metallic) thereby forming a continuous undisrupted pi structure.