Terms Flashcards
Reverse saturation current
Emitter - open circuited IE =0 ,
IpC=0 (collector holes current).
CB act as reverse biased diode
IC =reverse saturation current (ICo)
IC = IpC - ICo
IpC = 0
IC = ICo
Reverse collector saturation current ICBo
IE = 0 leakage current flowing around the junction & across the surface of the transistor
Emitter efficiency (gamma)
=Current of injected carriers at IE / total emitter current
= IpE / IpE +InE
= IpE / IE = 1
Transport Factor (beta)
= injected carrier current reaching at CB junction / injected carrier current at EB
= IpC / IpE
Large signal current gain (Alpha)
= IpC / IE
=IC - ICo / IE
Base width modulation
Early effect
In reverse bias, collector voltage increases space charge width btw base & collector. This decreases base width.
Dependency of base width on collector to emitter voltage is c/a early effect