NPN transistor Flashcards
1
Q
EB junction
A
EB junction - forward biased by VEE source - depletion region is reduced
2
Q
CB junction
A
CB junction - reverse biased by VCC source - depletion region larger
3
Q
Emitter current IE
A
Forward bias cause electron to flow from n (emitter) to p (base) and gives IE. Electrons combine with holes in p (base)
4
Q
Base current IB
A
Base is thin, lightly doped so, e- reach collector. e- from emitter recombine with holes to firm IB
5
Q
Collector current IC
A
Most e- cross base and move through collector to +ve terminal. This forms IC
6
Q
Conclusion
A
- collector current larger than base current
- electron - majority charge carriers
