Semiconductor Electronics Flashcards
the valency of impurity dropped in a pure germanium crystal to make it P - type semiconductor is :
3
The depletion layer of P-N junction has
Immobile ions
The forbidden energy gap in Germanium crystal is :
1.12 x 10 ^ -19 J
The width of depletion layer in P-N junction diode is:
10 ^ -4 m
Forbidden energy gap for Germanium semiconductor is
0.72 eV
At absolute zero temp. the piece of Germanium behaves like :
Insulator
n- type semiconductor contains
electron in majority
Junction diode is used as _____
Rectifier
The resistance of semiconductor _____ on adding impurity in it
Decreases
The majority charge carriers in N-type semiconductor are
Electron
With increase in temp. of a semiconductor its conductivity
Increases
In an intrinsic semiconductor the forbidden energy gap is of order of
1 eV
In a P-N junction diode the width of depletion layer is
10^ -4 m
The temp. coeff. of resistance of conductor is ________ [ +ve or -ve ]
Negative
In reverse bias, the resistance of P-N junction diode is
High
nh»_space; ne
P-type semiconductor
How does the energy gap in the intrinsic semiconductor varies on introducing a :
(i) penta valent impurity in it ?
(ii) trivalent impurity in it ?
The electron gap decreases in both cases
Whose drift velocity is greater holes or electrons ?
drift v of Electrons > holes
On increasing the reverse bias in P-N junction diode how does the width of depletion layer vary ?
It increases
In which bias the resistance of P-N junction diode is very high ?
Reverse bias
What is the value of energy gap for metals ?
Zero
