SEMICONDUCTOR Flashcards
Pure semiconductor
Germanium and silicon
Impure semiconductor
P-type and N-type
Doping
process of adding impurities to a semiconductor to increase its conductivity
P-type Semiconductor
Obtained by adding small amount of tetravalent impurities. Effect of this is creation of holes and gaps in the semiconductors crystal, because the impurity attracts electrons and results in holes having positive charges. These holes can migrate throughout the crystal. The resultant semiconductor is called p type because the possibility of current is by the motion of positive charges.
N-type Semiconductor
They are obtained by adding small amount of pentavalent element to the pure semiconductor In this type electrons are free to move in the crystal . Hence this is called N-type semiconductor due to presence of negative charged carriers in electrically neutral crystal
Knee voltage
voltage at which the forward diode current increases rapidly
Common base BJT
A type of BJT configuration where base terminal of transistor is a common terminal to both input and output signal
Common emitter BJT
type of BJT confi. where input is taken from base terminal output is collected from collector terminal and emitter is common to both
Common Collector BJT
A type of BJT confi where input is applied to base terminal and output signal is taken from emitter terminal. Collector terminal is common to both input and output signal
Common base current amplification (α)
ratio of output current to input current
Common emitter current amplification factor (β)
ratio of change in the collector current to the change in base current at a constant emitter voltage
Relation btw alpha and beta
Different modes of operation of BJT
on switch (J1 = J2 = F.B.)
off switch ( J1 = J2 = R.B.)
amplifier ( J1 = F.B. , J2 = R.B.)
Reverse blocking mode
Ideal Diode
in forward conduction region an ideal diode acts as a closed switch and in reverse blocking region it acts as an open switch