SEMICONDUCTOR Flashcards

1
Q

Pure semiconductor

A

Germanium and silicon

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2
Q

Impure semiconductor

A

P-type and N-type

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3
Q

Doping

A

process of adding impurities to a semiconductor to increase its conductivity

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4
Q

P-type Semiconductor

A

Obtained by adding small amount of tetravalent impurities. Effect of this is creation of holes and gaps in the semiconductors crystal, because the impurity attracts electrons and results in holes having positive charges. These holes can migrate throughout the crystal. The resultant semiconductor is called p type because the possibility of current is by the motion of positive charges.

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5
Q

N-type Semiconductor

A

They are obtained by adding small amount of pentavalent element to the pure semiconductor In this type electrons are free to move in the crystal . Hence this is called N-type semiconductor due to presence of negative charged carriers in electrically neutral crystal

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6
Q

Knee voltage

A

voltage at which the forward diode current increases rapidly

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7
Q

Common base BJT

A

A type of BJT configuration where base terminal of transistor is a common terminal to both input and output signal

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8
Q

Common emitter BJT

A

type of BJT confi. where input is taken from base terminal output is collected from collector terminal and emitter is common to both

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9
Q

Common Collector BJT

A

A type of BJT confi where input is applied to base terminal and output signal is taken from emitter terminal. Collector terminal is common to both input and output signal

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10
Q

Common base current amplification (α)

A

ratio of output current to input current

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11
Q

Common emitter current amplification factor (β)

A

ratio of change in the collector current to the change in base current at a constant emitter voltage

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12
Q

Relation btw alpha and beta

A
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13
Q

Different modes of operation of BJT

A

on switch (J1 = J2 = F.B.)
off switch ( J1 = J2 = R.B.)
amplifier ( J1 = F.B. , J2 = R.B.)

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14
Q

Reverse blocking mode

A
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15
Q

Ideal Diode

A

in forward conduction region an ideal diode acts as a closed switch and in reverse blocking region it acts as an open switch

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16
Q

Width of depletion layer

A

it increases with an increase in applied voltage

17
Q

Semiconductor diode is polarity sensitive

A

PN junction diode is a 2 terminal polarity sensitive device. The diode conducts when forward bias is applied and it will introduce zero resistance in the circuit. The diode does not conduct when reverse bias is applied and it will introduce infinite resistance in the circuit

18
Q

Doping in NPN and PNP transistor

A

Emitter is heavily doped
Base is lightly doped
collector is doped intermediately

19
Q

Working of NPN transistor

A
20
Q

Working of PNP transistor

A
21
Q

Transistor

A

A transistor is a three terminal device that can be used to conduct and insulate electric current or voltage

22
Q

Common collector circuit AKA

A

Grounded emitter circuit

23
Q

Diode is used in which circuit

A

rectifier

24
Q

depletion layer and R.B. , F.B.

A

F.B. reduced depletion layer while R.B. increases depletion layer

25
Q

Leakage in reverse blocking mode and temperature

A

leakage is constant at constant temperature

26
Q

what if reverse voltage is increased in diode beyond its inverse voltage

A

electrical breakdown takes place

27
Q

Inverse voltage

A

he maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching