SEMICONDUCTOR Flashcards
Pure semiconductor
Germanium and silicon
Impure semiconductor
P-type and N-type
Doping
process of adding impurities to a semiconductor to increase its conductivity
P-type Semiconductor
Obtained by adding small amount of tetravalent impurities. Effect of this is creation of holes and gaps in the semiconductors crystal, because the impurity attracts electrons and results in holes having positive charges. These holes can migrate throughout the crystal. The resultant semiconductor is called p type because the possibility of current is by the motion of positive charges.
N-type Semiconductor
They are obtained by adding small amount of pentavalent element to the pure semiconductor In this type electrons are free to move in the crystal . Hence this is called N-type semiconductor due to presence of negative charged carriers in electrically neutral crystal
Knee voltage
voltage at which the forward diode current increases rapidly
Common base BJT
A type of BJT configuration where base terminal of transistor is a common terminal to both input and output signal
Common emitter BJT
type of BJT confi. where input is taken from base terminal output is collected from collector terminal and emitter is common to both
Common Collector BJT
A type of BJT confi where input is applied to base terminal and output signal is taken from emitter terminal. Collector terminal is common to both input and output signal
Common base current amplification (α)
ratio of output current to input current
Common emitter current amplification factor (β)
ratio of change in the collector current to the change in base current at a constant emitter voltage
Relation btw alpha and beta
Different modes of operation of BJT
on switch (J1 = J2 = F.B.)
off switch ( J1 = J2 = R.B.)
amplifier ( J1 = F.B. , J2 = R.B.)
Reverse blocking mode
Ideal Diode
in forward conduction region an ideal diode acts as a closed switch and in reverse blocking region it acts as an open switch
Width of depletion layer
it increases with an increase in applied voltage
Semiconductor diode is polarity sensitive
PN junction diode is a 2 terminal polarity sensitive device. The diode conducts when forward bias is applied and it will introduce zero resistance in the circuit. The diode does not conduct when reverse bias is applied and it will introduce infinite resistance in the circuit
Doping in NPN and PNP transistor
Emitter is heavily doped
Base is lightly doped
collector is doped intermediately
Working of NPN transistor
Working of PNP transistor
Transistor
A transistor is a three terminal device that can be used to conduct and insulate electric current or voltage
Common collector circuit AKA
Grounded emitter circuit
Diode is used in which circuit
rectifier
depletion layer and R.B. , F.B.
F.B. reduced depletion layer while R.B. increases depletion layer