Photonics - Topic 4 Flashcards

1
Q

What does laser stand for?

A

Light Amplification by Stimulated Emission of Radiation

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2
Q

What is a laser?

A
  • A source of coherent light
    • “Monochromatic” (single wavelength) – spectral coherence
    • Usually intense and highly directed – implies spatial coherence
    • Usually taken to mean an “optical oscillator”
      • Gain + feedback
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3
Q

What is stimulated emission?

A
  • Incoming photon stimulating a higher energy state to lose energy and give off a new photon,
    • original photon is not absorbed, thus system emits two photons
  • The photon generated is identical to the incoming photon; same frequency (energy), phase, and direction as the incoming photon.
  • Amplification of incoming optical, if stimulated emission is more likely than absorption.
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4
Q

What does a 3 level system look like?

A
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5
Q

What does a 4 level system look like?

A
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6
Q

What are the main takeaways from einsteins coefficients?

A

B12 = B21

B12 is the Einstein coefficient for absorption.

B21 is the Einstein coefficient for stimulation

This tells us that absorption an stimulated emission are equally likely.

Also,

R21 (stim) − R12 (𝑎𝑏s) = B21𝜌(f)(𝑁2 − 𝑁1)

which shows tha 𝑁2 > 𝑁1 for net stimulated emission, thus population inversion is required.

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7
Q

What is population inversion?

A

The condition for stimulatd emission to dominate over absorption is that there must be more occupied states (electrons) at E2 than at E1. A 3/4 level system is required.

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8
Q

Where does the gain of the laser come from?

A

The gain of the laser comes from having more stimulated emission than absorption.

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9
Q

What does the Fabry-Perot cavity look like?

A
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10
Q

How will the power vary across a feedback cavity such as Fabry-Perot?

A

𝑃(𝑧) = 𝑃0e(𝑔 − 𝛼)z

where g is the power gain coefficient

𝛼 is the power loss coefficient

Net gain (coefficient) is given by (𝑔 − 𝛼)

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11
Q

What do we require for FP laser to function>?

A

unity round-trip gain

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12
Q

Expression for the threshold gain of an FP laser?

A
  • We normally interpret this as the balance between net stimulated gain (i.e. due to the excess of stimulated emission over absorption between energy levels) and loss
    • 𝛼 then accounts for scattering and other losses (but not absorption between lasing levels)
    • The second term on the RHS represents loss through the mirrors
  • 𝑔th is reduced if either L or R are increased
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13
Q

Light output against pumping level plot

A

Below threshold, 𝑔 proportinal to 𝑁2 − 𝑁1

Once threshold is reached, 𝑁2 − 𝑁1 is clamped

Pumping above the threshold level results in additional stimulated emission which results in increased photon density within the cavity and increased light output power

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14
Q

What are the conditions for the wavelengths or frequencies in FP laser?

A

λm = 2nL/m

fm = mc/2nL

It is only at these wavelengths or frequencies that there will be an output.

Where m is the number of wavelengths in a round trip.

The spacing of the longitudinal modes is given as:

△f = c/2nL

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15
Q

What do 𝑁1 and 𝑁2 symbolise?

A

the number of states per unit volume at 𝐸1 and 𝐸<span>2</span>

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16
Q

Diagram of a Edge-emitting semiconductor laser

A
17
Q

Benefit of using a Heterostructure semiconductor lasers

A
  • A double heterostructure can provide better carrier confinement than a homostructure.
    • Easier to reach the required threshold gain, i.e. it reduces threshold current.
  • Difference in refractive index between the active region and wider bandgap cladding layers creates a waveguide, guiding the light along the cavity between the FP mirrors.
    • This helps confine the light to the active layer, which reduces the threshold gain.
18
Q

Buried heterostructure laser diode

A
  • Improvement on the stripe contact laser is the buried heterostructure laser.
  • Active region is surrounded by wider bandgap material in the lateral direction, as well as in the vertical direction.
    • This creates a rectangular waveguide which confines the light in both lateral and vertical directions.
  • The current flow also confined to the active layer.
  • Together, these improvements can considerably reduce the threshold current.
19
Q

Variation of gain with carrier density (𝑁, in m-3 ), plot

A
20
Q

Eq: Dependence of on temperature

A

𝐼 = Ae𝑇/𝑇0

where 𝑇0 is the characteristic temperature (in K)

21
Q

Semiconductor FP laser spectrum

A
  • Fabry-Perot lasers can lase in several longitudinal modes simultaneously
  • They may be single-longitudinal mode (typically at higher output power)
  • Mode hops can occur as the current is increased. This is when the dominant mode can switches from one wavelength to another as current increases.
  • Each longitudinal mode can have a very narrow linewidth (a few MHz)
22
Q

Semiconductor laser light-current characteristic: Effect of facet reflectance on LI

A
  • Increasing R reduces 𝑔th , so reduces 𝐽th and 𝐼th
  • Increasing R reduces slope efficiency
23
Q

Semiconductor laser light-current characteristic: Effect of cavity length

A