Materials Flashcards
Silicon [Si]
The most widely used semiconductor material. It is abundant, relatively inexpensive, and easy to process. Silicon has a band gap of 1.12 eV, which makes it suitable for a wide range of applications, including transistors, integrated circuits, and solar cells.
USE CASE: silicon is often used for transistors and integrated circuits because it is relatively inexpensive and easy to process
Germanium [Ge]
Another important semiconductor material. It has a band gap of 0.67 eV, which makes it suitable for high-frequency applications. Germanium is also more transparent than silicon, which makes it useful for solar cells. However, germanium is less abundant than silicon and more difficult to process.
It is a chemical element with the symbol Ge and atomic number 32. Germanium is a semiconductor that is used in a wide variety of electronic devices. It has a band gap of 0.67 eV, which makes it well-suited for use in cryogenic applications.
Gallium arsenide [GeAs]
A compound semiconductor that is made from gallium and arsenic. It has a band gap of 1.42 eV, which makes it suitable for high-power and high-frequency applications. Gallium arsenide is also a very efficient light emitter, which makes it useful for laser diodes and LEDs. However, gallium arsenide is more expensive than silicon and germanium.
USE CASE Gallium arsenide is often used for laser diodes and LEDs because it is a very efficient light emitter
Indium phosphide [InP]
A compound semiconductor that is made from indium and phosphorus. It has a band gap of 0.9 eV, which makes it suitable for solar cells and infrared detectors. Indium phosphide is also a very efficient light emitter, which makes it useful for laser diodes and LEDs. However, indium phosphide is more expensive than silicon and germanium.
USE CASE indium phosphide is often used for solar cells and infrared detectors because it has a band gap that is well-suited for these applications.
Graphene [Gr]
A two-dimensional material that has excellent electrical properties
Quantum dots
Tiny semiconductor particles that can be used to create lasers and other devices with unique properties.
Indium gallium arsenide
InGaAs is a semiconductor. It is a ternary alloy of indium arsenide (InAs) and gallium arsenide (GaAs). The band gap of InGaAs can be tuned by varying the composition of the alloy. This makes InGaAs a versatile material for a variety of applications, including these use cases
USE CASES:
High-speed transistors: InGaAs transistors have faster switching speeds than silicon transistors, making them suitable for high-frequency applications.
Infrared detectors: InGaAs detectors are sensitive to infrared radiation, making them suitable for applications such as night vision and thermal imaging.
Solar cells: InGaAs solar cells can convert sunlight into electricity with high efficiency.
InGaAs is a relatively expensive material, but its unique properties make it well-suited for a variety of applications.
CMOS
complementary metal-oxide-semiconductor (CMOS)