Electronic- Semiconductor Properties and PN junctions Flashcards
Graph of log(carrier concentration) Vs 1/temperature
Steep straight line down from top left for intrinsic behaviour. Then flat line for extrinsic behaviour. Then straight shallow line down in freeze out region. Slopes give activation/ionisation energies
Formula for electrical conductivity
σ=neμ(electrons)+neμ(holes)
What is electron and hole mobility due to?
Response of charge carriers to and applied field. Scattering of charge carriers
What are electrons scattered by?
Disorder including phonons (thermal) and impurities and defects (structural)
Formula for mobility due to thermal disorder
μth=1/((mc*^5/2)T^3/2)
Where mc* is conductivity effective mass
Formula for mobility due to structural disorder
μim=(T^3/2)/((Nim)m^1/2)
Where m is effective mass
Nim is ionised impurity density
Formula for total mobility
μ=(1/μth + 1/μim)^-1
How do electrons move in an applied field?
They lose the extra energy they have gained resulting in an average drift velocity and not continuous acceleration. There are abrupt losses in velocity when collisions occur
Graph of carrier drift velocity Vs electric field
Log Vs log scale. For low electric fields is linear region where vd=μE (drift velocity and electric field). But then starts to curve and reaches a peak before decreasing due to phonon and impurity (mainly impurity) scattering decreasing mobility
Formula for mean free time between scattering events
1/τAv=1/τth + 1/τim
Subscript Av means average
Formula for mobility involving mean free time between scattering events
μ=(e/m*)τAv
Formula for total resistivity
ρtot=ρth+ρim
How does mobility change with impurity concentration?
It decreases initially very gradually but then later a lot. So decreases with increasing number of carriers
Log(σ) Vs 1/T for extrinsic semiconductors
Same as for log of carrier concentration but horizontal bit actually decreases as temperature increases (going left) due to reduction in mobility caused by increased scattering of fixed number of carriers
4 point probe method
4 probes at equal distance apart across the semiconductor. Current sent in and out through the outer most probes. Voltage measured between two inner most probes.
Rs=(V/I)CF (correction factor).
ρ=RsW (sample thickness)
Rs is resistance across separation of probes S
Used for calculating resistivity