ECE 2 Flashcards
A silicon pn junction device that is designed for
Operation in the reverse-breakdown region
Zener diodes
A diode that always operates in reverse bias and is doped to maximize the inherent
capacitance of the depletion region
Varactor diodes
When the device is forward-biased, electrons cross the pn junction from the n-type
material and recombine with holes in the p-type materials
Light-emitting diode
A device that operates in reverse bias where iy is the reverse light current. It has a
small transparent window that allows light to strike the pn junction
Photodiode
Also known as a photovoltaic cell, is a type of semiconductor device that converts
light into electrical energy
Solar cell
Normally emits coherent light, whereas the led emits incoherent light
Laser diode
Are high-current diodes used primarily in high-frequency and fast-switching
applications
Schottky diode
Consists of heavily doped p and n regions separated by an intrinsic region
Pin diode
Is a three-layer semiconductor device consisting
Of either two n- and one p-type layers of material or two p- and one n-type layers of
material
Transistor
Are three terminal semiconductor devices which could be used to amplify signals
Bipolar junction transistors
Derived from the fact that the base is common to both the input and output sides of
the configuration
Common base
Usually closest to or connected to the ground
Emitter
The base-emitter junction is forward-biased, whereas the collector-base junction is
reverse-biased
Active region
Base-emitter and collector-base junctions of a transistor are both reversed-biased
Cutoff region
Base-emitter and collector base junctions are forward-biased
Saturation region
Power supply that is directly or indirectly applied to the collector terminal of the
transistor
Collector biasing voltage (vcc)
Dc voltage that is used to bias the base of the transistor
Base biasaing voltage (vbb)
For common emitter, nothing more than a ground connection
Emitter biasing voltage (vee)