detectors Flashcards

1
Q

band structure/band gap

for diff materials

A

conduction band: where electrons are when excited

valence band: where all electrons are (ground state)

insulator: gap E>5eV

semiconductor: gap E~1eV

metal: no gap

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2
Q

N-type semiconductor

A

negative

pentavalent impurity
eg phosphor has 5 electrons
silicon has 4

extra electron
easily detached

electron almost free, energy just below conduction level

creates additional energy level just below conduction band

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3
Q

P type semiconductor

A

positive

trivalent impurity
missing electron
eg. boron has 3 electrons

hole
energy just above valence level

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4
Q

PN-junction

A

n type has excess electrons
p type has excess holes
join together: electrons diffuse to p type region and vice versa

they will recombine
leaving a region free of charge carriers

but that section is not electrically neutral

phosphor nuclei without electron is positive

boron nuclei with extra electron is negative

which creates an electric field

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5
Q

ionising particle in PN junction

A

the passage of an ionising particle creates ionisation, electrons and holes, which immediately drifts in opposite directions due to electric field

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6
Q

how to improve PN junction

A

currently small electric field and small region free of charge carriers

inversely polarise the PN junction
positive end pulls electrons that way
vice versa

enlarges the region free of charge carriers
ie the region in which ionising radiation can be detected

full depletion is reached
this is the photodiode

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7
Q

DC coupling

A

direct:
all generated charge can flow through the bonding wire, all charge in one go

in integrating devices

metallic bonding wire touches PN junction

DC coupling

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8
Q

AC coupling

A

indirect:
capacitor added

the interaction of the individual x-ray generates a pulse which is transmitted through the built in capacitance

current cant pass but pulse can

AC coupling

in counting devices

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9
Q

single-photon counting readout scheme

A

circuit:
input, preamplifier, shaper, buffer, high-pass filter, discriminator, threshold, 16 bit counter and shift register

discriminator can find threshold

set threshold above intensity of individual signal

to separate noise from signal

leaving only poisson fluctuations

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10
Q

film structure

A

emulsion contains grains

emulsion bottom, then base, then protective layer

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11
Q

film process

A

exposure: photons liberate electrons in silver halide

latent image: electrons produce silver atoms

development: chemical process reduces grains with number of silver atoms above threshold

fixation: removes unreduced grains (makes image permanent)

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12
Q

HD curve

A

film inefficient

H-D curve

optical density over log x-ray exposure

flat then straight line gradient then flat

under exposure then latitude (ideal section) then over exposure

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13
Q

film + fluorescent screen

A

mu is higher
thicken than emulsion
higher stopping power

reduced spatial resolution

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14
Q

structure of screen

A

phosphors

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15
Q

film adv and disadv

A

adv:
practical
easy to manufacture and use
reliable
cost effective
spatial resolution

disadv:
intrinsic background due to film granularity
low dynamic range
low efficiency
analog info unless digitisation
no image processing
working with chemicals and disposal
no storage, transfer of info
no real-time

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16
Q

digital detector qualities priorities

A

appropriate area coverage
uniformity
stability
linearity
high dynamic range

17
Q

BaFBr:Eu2+ process

A

screen, no film

materials in band gap create energy levels

electrons rise to conduction band and falls to F centre for long enough to be read (trapped)

shine red laser light to send electron back up to conduction band

electron falls through cascade mechanism down to valence band and emits blue light

blue light amount is proportional to electrons

18
Q

computed radiography
photostimulable phosphor plate
PSP

A

exposure: photons liberate electrons in phosphor

latent image: electrons trapped

development: laser beam scans plate, light emitted detected by PM tubes

erasure: uniform exposure releases any remaining electrons

19
Q

stimulation and emission spectra

A

relative intensity and energy graph

if low energy
only part is trapped, other emits prompt light (not captured)

if high energy:
too much falls back into traps, instead of producing luminescence

20
Q

CR adv over film

A

digitised image, post processing
wide dynamic range
large latitude
reusable plates

21
Q

image intensifier

A

The x-ray image intensifier converts the transmitted x rays into a brightened, visible light image.

the input phosphor converts the x-ray photons to light photons, which are then converted to electrons within the photocathode.

The electrons are accelerated and focused by a series of electrodes striking the output phosphor, which converts the accelerated electrons into light photons that may be captured by various imaging devices.

Through this process, several thousand light photons are produced for each x-ray photon reaching the input phosphor

intensification depends on
energy given to electrons (flux gain)
minification gain

22
Q

scintillator

A

cesium iodide

grown in columns
-tight packing
-light spread reduced

23
Q

flat panel detectors

A

direct conversion
-amorphous selenium

indirect conversion:
-scintillator
amorphous silicon

24
Q

amorphous selenium

A

The incident X-rays make the selenium layer generate electron-hole pairs. Under the action of an externally biased electric field, the electrons and holes move in opposite directions to form a current, and the current forms a stored charge in the thin film transistor. The amount of stored charge of each transistor corresponds to the dose of incident X-rays, and the charge amount of each point can be known through the readout circuit, and then the X-ray dose of each point can be known.
Since amorphous selenium does not produce visible light and has no influence of scattered rays, a relatively high spatial resolution can be obtained.

25
amorphous silicon
First, the scintillator converts X-ray energy into visible light photodiode: light is converted to electrical signals electric circuit image second way: x-ray is converted to electrical signals in sensor material electric circuit image
26
CCD
charge coupled devices crystalline silicon small requires optical coupling high quality, low noise
27
how CCD works
The CCD is divided up into a large number of light-sensitive small areas (known as pixels) which can be used to build up an image of the scene of interest. A photon of light which falls within the area defined by one of the pixels will be converted into one (or more) electrons and the number of electrons collected will be directly proportional to the intensity of the scene at each pixel. When the CCD is clocked out, the number of electrons in each pixel are measured and the scene can be reconstructed.
28
CCD potential wells
the pixels are defined by the position of electrodes above the CCD itself. If a positive voltage is applied to the electrode, then this positive potential will attract all of the negatively charged electrons close to the area under the electrode. In addition, any positively charged holes will be repulsed from the area around the electrode. Consequently a "potential well" will form in which all the electrons produced by incoming photons will be stored. prevent full well light must be prevented from falling onto the CCD for example, by using a shutter as in a camera. Thus, an image can be made of an object by opening the shutter, "integrating" for a length of time to fill up most of the electrons in the potential well, and then closing the shutter
29
CCD charge transfer
Each pixel actually consists of three electrodes IØ1, IØ2, and IØ3. Only one of these electrodes is required to create the potential well, but other electrodes are required to transfer the charge out of the CCD. all 0V, now IØ2 has 10V charge being collected under one of the electrodes. To transfer the charge out of the CCD, a new potential well can be created by raising IØ3 voltage, the charge is now shared between IØ2 and IØ3 . If IØ2 is now 0V, the charge will be fully transferred under electrode IØ3
30
CMOS sensors
complementary metal oxide semiconductor less expensive lower power usage lower quality more noise
31
how CMOS sensors work
CMOS sensors convert photons into electrons to a voltage & after that into a digital value through an on-chip ADC array of photodiodes can add transistors: source follower transistor to amplify signal reset transistor to clear pixel of charge row select transistor to select row for readout passive and active designs
32
gas detectors
gas between electrodes photon ionises gas voltage causes charges to move charge collected at electrodes no, of ions collected vs voltage graph
33
xenon ionisation chamber
used in CT operates in ionisation region Use of xenon gas ensures higher sensitivity and thinner design of the detector
34
MWPC
multi wire proportional chamber a type of proportional counter that detects charged particles and photons and can give positional information on their trajectory, by tracking the trails of gaseous ionization. gives x and y coordinates uses an array of wires at high voltage (anode), which run through a chamber with conductive walls held at ground potential (cathode)
35
silicon pixel/strip detectors
solid-state ionisation chambers Take a p-n-diode * Segment it * Apply a voltage * Wait for a MIP to deposit charge * Charges separate and drift in E-field * This gives a signal in the p-strips This detector will deliver 2D information – we need one more coordinate: