detectors Flashcards
band structure/band gap
for diff materials
conduction band: where electrons are when excited
valence band: where all electrons are (ground state)
insulator: gap E>5eV
semiconductor: gap E~1eV
metal: no gap
N-type semiconductor
negative
pentavalent impurity
eg phosphor has 5 electrons
silicon has 4
extra electron
easily detached
electron almost free, energy just below conduction level
creates additional energy level just below conduction band
P type semiconductor
positive
trivalent impurity
missing electron
eg. boron has 3 electrons
hole
energy just above valence level
PN-junction
n type has excess electrons
p type has excess holes
join together: electrons diffuse to p type region and vice versa
they will recombine
leaving a region free of charge carriers
but that section is not electrically neutral
phosphor nuclei without electron is positive
boron nuclei with extra electron is negative
which creates an electric field
ionising particle in PN junction
the passage of an ionising particle creates ionisation, electrons and holes, which immediately drifts in opposite directions due to electric field
how to improve PN junction
currently small electric field and small region free of charge carriers
inversely polarise the PN junction
positive end pulls electrons that way
vice versa
enlarges the region free of charge carriers
ie the region in which ionising radiation can be detected
full depletion is reached
this is the photodiode
DC coupling
direct:
all generated charge can flow through the bonding wire, all charge in one go
in integrating devices
metallic bonding wire touches PN junction
DC coupling
AC coupling
indirect:
capacitor added
the interaction of the individual x-ray generates a pulse which is transmitted through the built in capacitance
current cant pass but pulse can
AC coupling
in counting devices
single-photon counting readout scheme
circuit:
input, preamplifier, shaper, buffer, high-pass filter, discriminator, threshold, 16 bit counter and shift register
discriminator can find threshold
set threshold above intensity of individual signal
to separate noise from signal
leaving only poisson fluctuations
film structure
emulsion contains grains
emulsion bottom, then base, then protective layer
film process
exposure: photons liberate electrons in silver halide
latent image: electrons produce silver atoms
development: chemical process reduces grains with number of silver atoms above threshold
fixation: removes unreduced grains (makes image permanent)
HD curve
film inefficient
H-D curve
optical density over log x-ray exposure
flat then straight line gradient then flat
under exposure then latitude (ideal section) then over exposure
film + fluorescent screen
mu is higher
thicken than emulsion
higher stopping power
reduced spatial resolution
structure of screen
phosphors
film adv and disadv
adv:
practical
easy to manufacture and use
reliable
cost effective
spatial resolution
disadv:
intrinsic background due to film granularity
low dynamic range
low efficiency
analog info unless digitisation
no image processing
working with chemicals and disposal
no storage, transfer of info
no real-time