Chapter 5 - Diffusion Flashcards

1
Q

case hardened

A

hardness and resistance to failure by fatigue has been enhanced by diffusing excess carbon or nitrogen into the outer surface layer

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2
Q

diffusion

A

material transport by atomic motion

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3
Q

diffusion couple

A

formed by joining two bars of different metals together so that there is intimate contact between the two faces, the couple is heated for extended periods and then cooled

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4
Q

interdiffusion or impurity diffusion

A

the process whereby atoms of one metal diffuse into another

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5
Q

self-diffusion

A

when diffusion occurs in pure metals, or all atoms exchanging positions are of the same type

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6
Q

conditions of diffusion (2)

A
  1. there must be an empty adjacent site

2. the atom must have sufficient energy to break bonds with its nearest atoms and then cause some lattice distortion

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7
Q

vacancy diffusion

A

the interchange of an atom from a normal lattice position to an adjacent vacancy, necessitates the presence of vacancies

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8
Q

interstitial diffusion

A

when atoms migrate from an interstitial position to a neighboring one that is empty, found for inter diffusion of impurities, occurs more rapidly in metals than vacancy diffusion occurs

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9
Q

diffusion flux

A

(J) the rate of mass transfer, how fast diffusion occurs

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10
Q

steady-state diffusion

A

when diffusion flux does not change with time

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11
Q

concentration profile

A

when concentration C is plotted versus position or distance

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12
Q

concentration gradient

A

the slope at a point on the concentration profile

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13
Q

diffusion coefficient

A

(D) the constant of proportionality

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14
Q

Fick’s first law

A

J = -D * dC/dx, used for steady-state diffusion

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15
Q

Fick’s second law

A

(Cx-Co)/(Cs-Co) = 1 - erf(x/(2sqrt(Dt))), used for nonsteady-state diffusion, erf is the gaussian error function

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16
Q

carburizing

A

used to harden the surface of a steel above that of its interior, increases the surface concentration of carbon

17
Q

activation energy

A

(Qd) the energy required to produce the diffusive motion of one mole of atoms

18
Q

predeposition step

A

impurity atoms are diffused into the silicon (making of ICs)

19
Q

drive-in diffusion

A

higher temperature than the predeposition step, forms an oxide layer on the surface

20
Q

junction depth

A

(xj) represents the depth or value of x at which the diffusing impurity concentration is just equal to the background concentration of that impurity