TOPIC 1: INTRO TO NANOSCIENCE Flashcards

1
Q

Describe Nanowires [1D]

A
  • one dimensional structures
  • long string of atoms extending in one direction
  • can be metallic, semi-conductive or insulating
    perfect nanowire would be a single atom thick
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2
Q

Describe 2D nanomaterials

A
  • Ultra thin sheets
  • 5nm or less thick

e.g. Graphene

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3
Q

Describe nanoparticles [3D/0D]

A
  • Assemblies of small numbers of atoms that have coalesced
  • sizes and shapes are determined by kinetic and thermodynamic factors
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4
Q

Define the Top-Down approach to producing nanomaterials and name an example

A
  • Start with a block of raw material
  • use physical or chemical methods to decrease its size to leave desired structure

e.g. chemical etching. photolithography and electron beam lithography

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5
Q

Chemical Etching [Top-Down]

A
  • Engraving method
  • Wet chemical method –> liquid phase chemical reagents + high temp chemical spray
  • Chemical reactions between etching species [liquid] and etched material [solid]

Si(s) + 4KOH(aq) –> [SiO4]4- + 4K+(aq) + 2H2(g)

  • etching creates topographical surface features through selective removal of material using physical or chemical means
  • Etching in one direction is anisotropic
  • Etching in all directions is isotropic
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6
Q

Photolithography [Top-Down]

A
  • Based on shining a beam onto material [photoresist] supported by a substrate
  • Photoresist is chemically altered by exposure to light
  • Next step used to etch away exposed area of material [positive resist] or unexposed area [negative resist] depending on nature of material
  • Cheaper and throughput than EBL but low resolution
  • Makes integrated circuits
  • Mask contains a pattern e.g. for a circuit
  • Light projected onto mask and then through the mask onto the surface of the photoresist

+ve photoresist –> breaks down when exposed to light ==> MORE SOLUBLE

-ve photoresist –> becomes crosslinked when exposed to light ==> LESS SOLUBLE

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7
Q

Electron Beam Lithography [EBL]

A
  • Focused beam of electrons to bombard the resist
  • Allows patterns to be written directly into the resist [focused nature means no mask is required]
  • Used to manufacture masks for photolithography + X-ray lithography
  • Used to make integrated circuits
  • Resist solubility changes when it comes into contact with electrons
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8
Q

Define the Bottom-Up approach to producing nanomaterials and name an example

A
  • Start with atom-scale building blocks
  • Assemble them to create desired structure

e.g. Sol-Gel, Self-Assembly, Chemical Vapour Deposition + Molecular Beam Epitaxy

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9
Q

Sol-Gel Method [Bottom-Up]

A
  • Transformation of a sol [solid in liquid colloid] into a gel [liquid in solid colloid]

THREE STEPS:
- Sol formation –> hydrolysis of a metal oxide
- Polymerisation of the sol via formation of hydroxo- or oxo- bridges
- Heat treatment of the remaining organic or inorganic components

  • Used in the formation of nanoscale metal oxides
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10
Q

Self-Assembly [Bottum-Up]

A
  • Family of wet-chemical approaches
  • E.g. synthesis of Au NPs –> ionic Au salt reduced to form Au atoms which then aggregate [driven by thermodynamics]
  • Requires consideration of thermodynamic and kinetic factors
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11
Q

Chemical Vapour Deposition [Bottom-Up]

A
  • Transformation of gas precursors into solid materials in the form of thin film or powder
  • Chemistry is based on high temperature catalytic decomposition of precursors materials e.g. organic molecules when forming polysilicon thin films
  • Takes place under low pressure - close to vacuum
  • Decompose small molecules + deposit thin layer on substrate
  • produces silicon dioxide
  • produces CNTs and semiconductor materials

CNTs:
CH4(g) —————————-> SWNT + 2H2(g)
@ 700C, 1atm, Fe/Co/Ni cat.

SILICA WAFER:
Si(OC2H5)4(g) —————————-> SiO2(s) + O(C2H5)2(g)

can also be done with silane:
SiH4(g) +O2(g) —————————-> SiO2(s) + 2H2(g)

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12
Q

Molecular Beam Epitaxy [Bottom-Up]

A
  • Ultra high vacuum process - produces high purity thin films with mono layer control
  • Thin layers of materials w/ lattice structures identical to the substrate
  • Single + clusters of atoms heated in vacuum and deposited onto a hot substrate surface
  • Atoms diffuse across the surface + grow into a pure film
  • Process requires extremely low pressure + contamination free environment [layer growth is extremely slow, 1mmh-1]
  • Requires better vacuum than comparable tech
  • Creates some of the most pure films
  • Makes diodes and transistors

Can create higher quality NPs –> maintain vacuum for longer –> higher risk of impurities

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13
Q

Top-Down VS Bottom Up

A
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14
Q

Surface Area

A
  • Important factor in rationalising unique properties of nanomaterials - high surface area (per unit mass) COMPARED to bulk materials
  • As particles decrease in size, a greater proportion of their atoms exist at the surface
  • Surface atoms have different energy to interior atoms –> affects reactivity, catalytic activity and physical properties.

In most objects [macro] surface atoms make up negligible proportion so have a negligible effect on the properties of objects.

NOT NEGLIGIBLE IN NANOMATERIAL

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15
Q

Surface Layers

A
  • Surface layers tend to be three or less atoms deep
  • Surface layers have a lower number of nearest neighbors than interior atoms which then RAISES their energy and in turn REDUCES the STABILITY of the surface layers
  • N(surface atoms)/N(total atoms) = 1/2r
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16
Q

Surface Energy

A
  • It costs higher energy to create a new surface because surface atoms have higher energy than the interior
  • Natural tendency to minimise surface area
  • Results in surface tension
  • Surface Tension is the force perunit length that opposes the expansion of a surface area

dw = ydA

17
Q

Surface Plasmon Resonance [SPR]

A
  • In metallic NPs collective oscillations of the conduction electron density at the surface are observed when the electrons are excited by incoming light of the appropriate frequency
  • Colour of the suspension of NP depends on the wavelength of incident radiation, composition of NP, shape, size and orientation.

Wp^2 = Nee^2/e0m

  • Higher electron density results in lambda max shifting to shorter wavelengths