TEM Flashcards

1
Q

What samples is TEM for?

A

e- of energy 50 keV, much higher than LEED - penetrates deep into the bulk

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2
Q

What does TEM stand for?

A

transmission electron microscope

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3
Q

Describe TEM process

A

1) e- beam focussed onto a spot on the sample
2) uses a magnetic lens (e- are fired through)
3) the incident electrons have so much energy they knock the electrons from the sample = secondary electrons, and these are detected
4) the beam or sample is scanned across to see the whole sample

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4
Q

How to interpret TEM images?

A

darker spots = higher e- density

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5
Q

pros and cons of TEM

A

pro - can be used for almost any sample as long as e- can get through it

cons - e- are harder to focus than light bc they repel each other

e- are diffraction limited

the e- are much higher energy than in STM so penetrate well into the bulk

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6
Q

what is a STEM?

A

scanning transmission electron microscope

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7
Q

uses for STEM

A

1) can image interfaces between materials - gives atomic resolution
2) can be used for bio-imaging

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8
Q

eq for average energy spacing between energy levels in bonding of polyatomics

A

average energy spacing = total energy spacing/ no. of levels

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9
Q

what is the splitting like for an infinite chain?

A

splitting betw the top (fully antibonding) and bottom (fully bonding) energy levels increases with more atoms, but but the max is 4ß (when infinite chain)

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10
Q

what does the density of states (DOS) tell us?

A

how many and the variation of molecular orbital states there are at a given energy within a band

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11
Q

why are DOS much higher for d e-?

A

bc they are more localised on atoms, the DOS of d-states DOES NOT equal zero at the fermi level

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12
Q

Describe DOS for TM

A

s e- peak at the lowest and then the highest energy

huge d e- peak right on/after the lowest energy s e- peak

p e- fluctuating along all energies

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13
Q

what gives a wider band?

A

interaction of the d band with the sp band

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14
Q

what does the bandwidth depend on?

A

the number of neighbours, when surface atoms are underbonded, the band is narrower (compared to the bulk)

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15
Q

how does the DOS at a surface atom compare to in the bulk?

A

slightly lower DOS in the bulk than surface, apart from at the lowest E the bulk has the higher DOS

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16
Q

describe the DOS in terms of reactivity and occupation of the d band

A

Cu has a full d-band so is lower down further away from the Fermi energy.

Ni d-band is unoccupied at Ef so Ni is more reactive than Cu

more unoccupied states at Ef = more reactive

17
Q

describe the DOS in terms of reactivity and occupation of the d band and energy of the d-band

A

a d-band higher in energy (further right) means its more empty = more reactive

Co is more reactive than Ni

18
Q

describe the DOS in terms of narrowness of the band

A

a broader band ie. Ti has a broad and almost empty d-band

means tight bonding and strong/hard material

19
Q

describe the band gap properties of insulators

A

full valence band
large band gap of >3 eV
sigma increases with T

20
Q

describe the band gap properties of semiconductors

A

full valence band
band gap 0.5 - 3 eV
sigma increases with T

21
Q

describe the band gap properties of conductors (metals)

A

partially filled band
no band gap
sigma decreases with T

22
Q

which surfaces are dangling bonds on?

A

insulator/semiconductors

23
Q

describe dangling bonds

A

a surface with directional covalent bonds with sp3 bonding e.g. diamond has bonds missing

the states have energies outside of the full valence band, but in the gap

before reconstruction to increase the bonding

24
Q

describe the process of how you get electronic structure from experiments?

A

1) UPS photon fired in, e- detected out
2) angle of incidence varied to see how electronic states vary with direction of travel of wave
3) plot intensity vs E of e- is

25
Q

What technique do you use to get electronic structure from experiments?

A

XPS or UPS
but UPS is used more bc surface sensitive bc photons don’t penetrate far into the bulk