TANG INANG BUHAY TO Flashcards
What does B/T stand for?
A) Biased Junction Transistor
B) Bipolar Junction Transistor
C) Basic Junction Transformer
D) Binary Junction Terminal
B) Bipolar Junction Transistor
Which of the following is a three-layer semiconductor device?
A) MOSFET
B) JFET
C) BJT
D) IGBT
C) BJT
In a B/T, which regions are heavily doped?
A) Collector and Base
B) Base and Emitter
C) Collector and Emitter
D) Emitter and Substrate
C) Collector and Emitter
In an NPN transistor, which type of semiconductor material forms the base?
A) P-type
B) N-type
C) Intrinsic
D) Extrinsic
A) P-type
What are the two types of B/Ts?
A) NPN and PNP
B) P-type and N-type
C) Emitter and Collector
D) Bipolar and Unipolar
A) NPN and PNP
What is the majority charge carrier in the base region of a B/T?
A) Electrons
B) Holes
C) Ions
D) Protons
B) Holes
Which terminal of a B/T is usually heavily doped?
A) Base
B) Emitter
C) Collector
D) Substrate
B) Emitter
What is the function of the base in a BJT?
A) To provide mechanical support
B) To control the flow of majority carriers
C) To provide electrical isolation
D) To amplify the input signal
B) To control the flow of majority carriers
In a BJT, which terminal is the output?
A) Base
B) Emitter
C) Collector
D) Substrate
C) Collector
What is the main disadvantage of B/Ts compared to MOSFETS?
A) Lower gain
B) Higher switching losses
C) Higher cost
D) More complex fabrication process
B) Higher switching losses
Which biasing configuration provides the highest voltage gain in a B/T amplifier?
A) Common Base
B) Common Emitter
C) Common Collector
D) Voltage Divider Bias
B) Common Emitter
What is the primary function of the collector in a BJT?
A) To provide electrical isolation
B) To provide mechanical support
C) To control the flow of majority carriers
D) To collect majority carriers emitted by the base
D) To collect majority carriers emitted by the base
What happens to the base-collector junction in a BJT when it is forward-biased?
A) It becomes narrower (in the context of reducing the reverse bias voltage)
B) It becomes wider
C) It remains unchanged
D) It becomes a short circuit
A) It becomes narrower (in the context of reducing the reverse bias voltage)
Which region of a BJT is thin and lightly doped?
A) Emitter
B) Base
C) Collector
D) Substrate
B) Base
Which configuration provides a high input impedance in a BJT amplifier?
A) Common Emitter
B) Common Base
C) Common Collector
D) Darlington Pair
C) Common Collector
What happens to the collector current in a BJT when the base current is increased?
A) It decreases
B) It remains constant
C) It increases
D) It becomes zero
C) It increases
Which parameter indicates the ratio of collector current to base current in a BJT?
A) Beta (β)
B) Alpha (α)
C) Gamma (γ)
D) Delta (δ)
A) Beta (β)
In which region does a B/T act as an amplifier?
A) Saturation
B) Cutoff
C) Active
D) Inverse
C) Active
Which of the following is not a BJT configuration?
A) Common Source
B) Common Collector
C) Common Base
D) Common Emitter
A) Common Source
Which of the following is a voltage-controlled device?
A) BJT
B) JFET
C) IGBT
D) MOSFET
D) MOSFET
What is the output characteristic curve of a BJT?
A) Collector current vs. Base voltage
B) Collector current vs. Collector-emitter voltage
C) Base current vs. Collector-emitter voltage
D) Base current vs. Base-emitter voltage
B) Collector current vs. Collector-emitter voltage
In a common emitter configuration, the input is applied between which two terminals?
A) Base and Emitter
B) Collector and Emitter
C) Base and Collector
D) Collector and Base
A) Base and Emitter
Which region of operation of a B/T corresponds to the saturation region?
A) Active
B) Cutoff
C) Saturation
D) Inverse
C) Saturation
What happens to the collector current in a BJT when the base-emitter junction is reverse-biased?
A) It increases
B) It decreases
C) It remains constant
D) It becomes zero
D) It becomes zero
What is the primary advantage of a Darlington pair configuration?
A) Higher input impedance
B) Higher current gain
C) Lower output impedance
D) Lower power dissipation
B) Higher current gain
