Swm2 Flashcards
What is a semi-conductor
At room temperature; conductivity w semi conductor is between metal and insulator
Completly filled bands by band gap is relatively small
What is an intrinsic semiconductor
insulates at 0 temp but conducts ar room temp
This is due to excitation of electrons w large thermal energy across relatively small bandgao
increase un conductivity as temp increases so Energy thermal increases therefore excited electrons can cross band gap
What is Valance band
Highest energy filled in superconcustor
Full at T=0
What is conduction band
Lowest empty band
electrons in bottom have free-electron like dynamics
What can doping cause
Ntype and Ptype superconductors
What is ab N type superconductor
Excess of electrons by addition of donor impurities
Conductivity dominated by electrons occupying stated n ear bottom of conduction band
P type superconductor
Excess of holes by addition of acceptor impurities
Conductibity dominated by holes occupying states near the top of valence band
Properties of holes
- Zero energy at top of band
- Sum od wavevectors of hole is 0
The dynamical properties of a nearly filled band with n empty electron states is equivalent to that of
n hole states with a positive charge and a positive effective mass
What is an indirect superconductor
Minimum energy of the conduction band occurs at a different k-vector value than max of the valance band
Energy and wave vector of a phonon at Room temperature
ππβππππ = kπ΅T β 25 meV
ππβππππ = ππβππππ/βπ£π ~ 1010 mβ1
Conservation of energy and wavevector when absorbed phonon moved into state at bottom of conduction band from valance band
πΈπ = ππβππ‘ππ + ππβππππ β ππβππ‘ππ
and
Ξπ = ππβππ‘ππ + ππβππππ β ππβππποΏ½
What is a p-n semiconductor junction
region of a semiconductor that is selectively doped so that one part is
p-type and an adjacent part is n-type.
How do you calculate the form of electrostatic potential
Poissonβs Equation
Partial 2nd derivation of phi/x = -rho(x)/ e0er
Delpeion length equation
page 22
What is generation current
flowing from the n-side to the p-side of the junction,
which is defined as a negative current.
Jgen = -A exp(-Eg/2kBT)