Semiconductor devices Flashcards

1
Q

Junction between 2 metals

A

When 2 dissimilar metals are placed in contact, electrons can flow from higher energy states in metal A to lower energy vacant states in metal B
This process continues until the highest occupied energy states on either side of the junction are the same - i.e. the metals have the same Fermi energies

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2
Q

Contact potential

A

Generated when electrons are transferred from A to B

Metal A is now positive and metal B is now negative

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3
Q

Magnitude of the contact potential

A

The difference between the work functions of the 2 metals

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4
Q

Contact potential definition

A

The difference in electrostatic potential between two metals that are in contact and are in thermodynamic equilibrium Specifically, it is the potential difference between a point close to the surface of the first metal, and a point close to the surface of the second metal

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5
Q

Describe p-n junction

A

When p- and n-type materials are initially placed in contact, almost all of the conduction electrons are on the n-side of the junction and most of the holes are on the p-side
Electrons from the n-region near the p–n interface diffuse into the p-region and recombine with holes in the p-region, forming negatively charged acceptor ions in the p-region
Likewise, holes from the p-type region near the p–n interface diffuse into the n-type region and recombine with electrons to form positive donor ions in the n-region
Therefore, there is a layer either side of the junction with a reduced carrier concentration compared to the rest of the crystal
This is called the depletion zone
An equilibrium is reached in which a potential difference (contact potential) is formed across the junction

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6
Q

Electric field

A

Goes from positive to negative

So goes from n to p in the depletion zone of the p-n junction

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7
Q

What happens when a p-n junction is connected to a battery source?

A

An additional energy source overcomes the potential barrier in the depletion zone, resulting in free electrons being able to cross the depletion region from one side to the other

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8
Q

Why are the conduction and valence bands higher energy on the p-side of the p-n junction?

A

Electron potential energy is higher on the p-side than the n-side
Bands bend up in the direction of the electric field
Electric field is positive to negative, opposite direction to potential

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9
Q

Define depletion zone

A

The insulating region in the middle of the p-n junction that contains no mobile charge carriers
Only contains ionised donors/acceptors

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10
Q

Why is the depletion zone named so?

A

Because it is formed from the removal of all free charge carriers, leaving none to carry a current

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11
Q

Charge of a p-n junction

A

The p- and n- regions are both neutral, but the regions near the p-n interface lose their neutrality due to the diffusion of the majority charge carriers
N-side is positively charged
P-side is negatively charged

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12
Q

What is the consequence of the p-n interface being charged?

A

It creates an electric field the opposes the charge diffusion
When this electric field is sufficiently strong, it prevents further diffusion of electrons and holes
i.e. the depletion region reaches equilibrium

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13
Q

Equilibrium state of a p-n junction

A

No matter how large the contact potential between the p- and n- sides of the junction, there is still a finite probability that some of the conduction electrons on the n-side have a greater energy than that of the conduction band edge on the p-side
These electrons can therefore diffuse across the junction into the p-side and give rise to a ‘diffusion current’
There is also a finite probability of finding some thermally-created electrons in the conduction band on the p-side
These electrons are attracted to the n-side due to the built-in electric field across the junction, giving rise to a ‘drift current’

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14
Q

Diffusion current

A

At equilibrium, some of the conduction electrons on the n-side of the junction have a greater energy than that of the conduction band edge on the p-side so can diffuse across the junction into the p-side

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15
Q

Drift current

A

At equilibrium, there is a finite probability of finding some thermally-created electrons in the conduction band on the p-side of the junction
These electrons are attracted to the n-side due to the built-in electric field across the junction, giving rise to a ‘drift current’

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16
Q

Magnitude of diffusion and drift currents at equilibrium

A

When the system is in equilibrium, there must be no net flow of charge
i.e. the flow of electrons from n to p must exactly equal the flow of electrons from p to n
i.e. the diffusion current must be equal in magnitude to the drift current
The p-n junction is in a state of dynamic equilibrium

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17
Q

Forward bias

A

Applying a positive voltage
Involves connecting the positive terminal of the battery to the p-end and the negative terminal of the battery to the n-end
This means the external voltage is in the opposite sense to the built-in voltage, thus reducing the voltage difference across the junction (the depletion zone is ‘pushed’ towards the centre of the junction so gets smaller)
This means more of the conduction electrons on the n-side can diffuse across the junction, i.e. the diffusion current is increased compared to when there is no applied voltage
The diffusion current becomes larger than the drift current so there is a net flow of electrons from n to p

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18
Q

Negative bias

A

Applying a negative voltage
Involves connecting the negative terminal of the battery to the p-end and the positive terminal of the battery to the n-end
This means the external voltage is in the same sense as the built-in voltage, thus the potential difference across the junction is increased
This means fewer conduction electrons on the n-side can diffuse across the junction, i.e. the diffusion current is decreased compared to when there is no applied voltage

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19
Q

Potential across the junction in p-n junctions with a forward bias

A

ePhi - eV

20
Q

Effect on diffusion current with increasing voltage

A

Diffusion current increases exponentially with the magnitude of the applied voltage

21
Q

Minority carriers in p

A

Electrons

22
Q

Effect of applied voltage on the drift current

A

Drift current = electrons from p to n
Electrons in p are minority carriers so are not affected by the external voltage
Concentration of minority carriers only depends on temperature
Therefore the drift current does not change from the zero-voltage case, in either the forward or reverse bias condition

23
Q

Diffusion length

A

The average length an electron can travel through the p-type material before recombining with a hole

24
Q

How are p-n junctions manufactured?

A

They are created by doping

25
Q

Relationship between voltage and current in forward bias p-n junction

A

Current increases exponentially with voltage

26
Q

Relationship between voltage and current in reverse bias p-n junction

A

Current remains very small regardless of the magnitude of the voltage

27
Q

P-n junction current-voltage graph

A

Draw

28
Q

Direction of current flow through p-n junctions

A

P-n junction only allows current to flow in one way

Can be used as a rectifier to change alternating current into direct current

29
Q

Size of p-n junction barrier voltage in silicon

A

0.6-0.7 V

30
Q

III-V semiconductors

A

Crystallise with high degree of stoichiometry
Most can be obtained as both n- and p-type
Many have high carrier mobilities and direct band gaps (useful for optoelectronics)

31
Q

Examples of narrow band gap materials

A

Elemental semiconductors e.g. Si, Ge, Sn, C, S, Se, Te

III-V semiconductors e.g. BN, …, InSb

32
Q

II-VI semiconductors

A

Usually p-type, except ZnTe and ZnO which are n-type

33
Q

Examples of n-type II-VI semiconductors

A

CdS/Se/Te

Direct band gaps

34
Q

ZnO

A

Wide, direct band gap semiconductor of the II-VI group
Band gap ~3.4 eV at room temp
Band gap can be tuned to ~3-4 eV by alloys with MgO or CdO
N-type
Can be doped with Al or F (ZnO:Al, ZnO:F) = transparent conducting oxides

35
Q

Transparent conducting oxides

A

Wide band gaps with energy greater than that of visible light
Therefore photons with energy lower than this energy can pass through without being absorbed (i.e. visible light can pass through - they are transparent)

36
Q

II-VI semiconductors

A

Usually p-type, except ZnTe and ZnO which are n-type

37
Q

Examples of n-type II-VI semiconductors

A

CdS/Se/Te

Direct band gaps

38
Q

ZnO

A

Wide, direct band gap semiconductor of the II-VI group
Band gap ~3.4 eV at room temp
Band gap can be tuned to ~3-4 eV by alloys with MgO or CdO
N-type

39
Q

Transparent conducting oxides

A

Wide band gaps with energy greater than that of visible light
Therefore photons with energy lower than this energy can pass through without being absorbed (i.e. visible light can pass through - they are transparent)

40
Q

ZnS/Se/Te

A

Direct band gap

Can be doped n- or p-type

41
Q

II-V semiconductors

A

e.g. Zn3P2, Cd3As2

Not widely studied because they are susceptible to oxidation

42
Q

I-VII semiconductors

A

e.g. CuCl, CuI
P-type
Combine with CuSCN (= hole conductor)

43
Q

IV-VI semiconductors

A

e.g. Pb/Sn with S/Se/Te

44
Q

SnS vs. SnS2

A

IV-VI semiconductors

SnS is p-type whereas SnS2 is n-type

45
Q

II-V semiconductors

A

e.g. Zn3P2, Cd3As2

Not widely studied because they are susceptible to oxidation

46
Q

MO

A

Rock-salt structures

Therefore metal is in an octahedral environment