Semiconductor and Diodes Flashcards

1
Q

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

a. 1
b. 2
c. 4
d. 6

A

c. 4

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2
Q

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

a. conductivity
b. resistance
c. power
d. all of the above

A

a. Conductivity

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3
Q

The forward voltage across a conducting silicon diode is about

a. 0.3V
b. 1.7V
c. -0.7V
d. 0.7V

A

d. 0.7V

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4
Q

What is the maximum power rating for LEDs

a. 150mW
b. 500mW
c. 1W
d. 10W

A

a. 150mW

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5
Q

The test current in a Zener diode IZT is the current defined by the _______ (1/4, 1/2, 3/4, 1) power level

a. 1/4
b. 1/2
c. 3/4
d. 1

A

a. 1/4

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6
Q

Which diode(s) has (have) a zero level current and voltage drop in the ideal model?

a. Si
b Ge
c. Both Si and Ge
d. Neither Si nor Ge

A

All diodes

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7
Q

The atomic number of an element is determined by

A. The number of neutrons
B. The number of protons
C. The number of neutrons plus the number of protons
D. The number of electrons

A

The number of protons

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8
Q

For high voltage applications, we use

A. centre-tap rectifier
B. bridge type rectifier
C. half-wave rectifier
D. none of the above

A

B. Bridge Type Rectifier

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9
Q

For high temperature and high power requirement of semiconductors, the material use is

A. SiC
B. Si
C. Ge
D. Sb
Answer: A

A

A. SiC

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10
Q

The wavelength and frequency of light of a specific color are directly related to the

A. Power supply
B. Voltage supply
C. Energy band gap
D. Threshold

A

C. Energy Band Gap

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11
Q

Ionization within a P-N junction causes a layer on each side of the barrier called the:

A. junction
B. depletion region
C. barrier voltage
D. forward voltage

A

B. Depletion Region

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12
Q

Reverse bias is a condition that essentially _____ (allows, prevents, increases) current through the diode

A. allows
B. prevents
C. increases
D. blocks

A

B. Prevents

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13
Q

The most common type of a diode failure is an

A. open
B. short
C. Resistive
D. reactive

A

A. Open

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14
Q

The _________ diode model in employed most frequently in the analysis of electronic systems

A. ideal device
B. simplified
C. piecewise-linear
D. Shockley

A

B. Simplified

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15
Q

The temperature coefficient can be _______(positive, negative, zero) for different Zener levels

A. positive
B. negative
C. zero
D. All of the above

A

D. All of the above

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16
Q

The output frequency of a half-wave rectifier is ______ the input frequency.

A. one-half
B. twice
C. equal to
D. none of the above

A

C. equal to

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17
Q

What phenomenon in electronics does an avalanche breakdown primarily dependent

A. Doping
B. Recombination
C. Ionization
D. Collision

A

D. Collision

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18
Q

The values of L and C in filter circuits for a half-wave rectifier are _______ (less, more, same) as compared to that of full-wave rectifier

A. Same
B. More
C. Less
D. None of the above

A

C. zless

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19
Q

Germanium has a breakdown voltage of less than 100V to a maximum of

A. 400 V
B. 500 V
C. 1000 V
D. 10000 V

20
Q

What diode gives off light when energized?

A. Photodiode
B. LED
C. Photoconductive cell
D. Tunnel

21
Q

What is the most significant development in electronics since WWII

A. the development of color TV
B. the development of the diode
C. the development of the transistor
D. the development of the TRIAC

A

C. the development of the transistor

22
Q

Atoms that normally have three electrons in their outer shell are called ______ atoms

A. trivalent
B. pentavalent
C. tetravalent
D. charged

A

A. trivalent

23
Q

What occurs when a conduction-based electron loses energy and falls back into a hole in the valence band?

A. doping
B. recombination
C. generation
D. annihilation

A

B. recombination

24
Q

What is the value of the transition capacitance for a silicon diode when Vd = 0?

A. 1 pF
B. 3 pF
C. 5 pF
D. 10 pF

25
The diffused impurities with ______ valence electrons are called acceptor atoms. A. 0 B. 3 C. 4 D. 5
B. 3
26
A diode is in the "_________" state if the current established by the applied sources is such that its direction matches that of the arrow in the diode symbol, and Vd greater or equal to 0.7V for Si and Vd is greater or equal for Ge. A. Off B. On C. Neutral D. Quiescent
B. On
27
The reverse breakdown voltage of a semiconductor diode will increase or A. Potential barrier B. Material C. Zener potential D. Bias
C. Zener potential
28
The pressure available to push electrons from the power supply, through a conductor and back to the power supply is called A. Voltage B. Resistance C. Ampere D. Current
A. Voltage
29
What happens to the barrier potential when the temperature increases? A. Barrier potential decreases as temperature increases B. Barrier potential increases as temperature increases C. Remains the same D. All of the above
A. Barrier potential decreases as temperature increases
30
What are solid state gallium arsenide devices that emit a beam of radiant flux when forward biased? A. LEDs B. Photoconductive cells C. IR emitters D. Photodiodes
C. IR emitters
31
31. What causes the depletion region? A. doping B. diffusion C. barrier potential D. ions
B. diffusion
32
A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A. the diode is open. B. the diode is shorted to ground. C. the diode is internally shorted. D. the diode is working correctly.
C. the diode is internally shorted.
33
The maximum number of electrons in each shell of an atom is A. 2. B. 2n² where n is the number of the shell. C. 4. D. 8.
B. 2n² where n is the number of the shell.
34
Which of the following ratings is true? A. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. B. Si diodes have higher PIV and wider temperature ranges than Ge diodes. C. Si diodes have lower PIV and narrower temperature ranges than Ge diodes. D. Si diodes have lower PIV and wider temperature ranges than Ge diodes.
B. Si diodes have higher PIV and wider temperature ranges than Ge diodes.
35
A(n) ______ is the simplest of semiconductor devices.
A. diode
36
What best describes the circuit? source -> diode -> resistor A. Full-wave rectifier B. Half-wave rectifier C. Clipper D. Clamper
B. Half-wave rectifier
37
The cathode of a zener diode in voltage regulator is normally A. More positive than the anode B. More negative than the anode C. At +0.7 V D. Grounded
A. More positive than the anode
38
What rectifier circuit is best to provide high power at low voltage? A. Half wave B. Voltage multiplier C. FW center tap D. Bridge
C. FW center tap
39
The arrow in the schematic symbol for a diode points which way? A. Towards the cathode B. In the direction of the current flow C. Towards the anode D. Towards the magnetic north
A. Towards the cathode
40
______ are networks that employ diodes to clip away a portion of the input signal without distortion in the remaining waveform. A. Clipper B. Clamper C. Voltage follower D. Regulator
A. Clipper
41
What is an energy gap? A. The space between two orbital shells B. The energy equal to the energy acquired by an electron passing a 1 V electric field C. The energy band in which electrons can move freely D. An energy level at which an electron can exist
A. The space between two orbital shells
42
Single-element semiconductors are characterized by atoms with ____ valence electrons. A. 3 B. 4 C. 5 D. 2
B. 4
43
The term bias in electronics usually means
C. The value of dc voltages for the device to operate properly.
44
Which capacitance dominates in the forward-bias region? A. Diffusion B. Transition C. Depletion D. None of the above
A. Diffusion
45