Semiconductor Flashcards

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1
Q

What is the forbidden energy gap ?

A

The forbidden energy gap, or band gap, is the energy difference between the highest energy level of the valence band and the lowest energy level of the conduction band in a semiconductor or insulator.

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2
Q

What is the forbidden energy gap for conductors, insulators and semiconductors ?

A

Conductor : ~ 0eV
Insulator : >3eV
Semiconductor : <3eV

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3
Q

What is the reason for the current in semiconductor ?

A

Electron and holes

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4
Q

What is the value of the forbidden energy gap for silicon and germanium ?

A

Si = 1.1eV
Ge = 0.7eV

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5
Q

How does semiconductor behave at zero kelvin and at room temperature ?

A

At zero kelvin semiconductors behave as insulators.

  At room temperature, some electrons gain energy and jump from the valence band to the conduction band. As a result, the valence band becomes partially empty and the conduction band becomes partially filled.
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6
Q

What is the difference between intrinsic and extrinsic type of semiconductor ?

A

Intrinsic semiconductors are pure forms of semiconductors. Extrinsic semiconductors are doped to increase their conductivity.

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7
Q

What type of impurity is added to n-type and p-type semiconductors?

A

In N-type semiconductors, pentavalent impurities like phosphorus (P), arsenic (As), and antimony (Sb) are added (donor impurities). In P-type semiconductors, trivalent impurities like boron (B), aluminum (Al), and indium (In) are added (acceptor impurities).

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8
Q

What is the charge on N type and P type of semiconductor ?

A

Entirely neutral

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9
Q

What is the reason for current flow in N-type semiconductors and current flow in P-type semiconductors?

A

In N-type semiconductors, current flows mainly due to electrons, while in P-type semiconductors, it flows mainly due to holes.

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10
Q

What is the diffusion current and drift current in the PN junction ?

A

Diffusion current is caused by the movement of majority carriers and therefore flows from the p-side to the n-side; this is also called forward current. Drift current, on the other hand, is caused by the movement of minority carriers and thus flows from the n-side to the p-side; it is also known as reverse current.

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11
Q

What is the total current if there is no biasing in a PN junction?

A

If there is no biasing then diffusion current is equal to drift current. So total current is zero.

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12
Q

In PN junction which side is at high potential ?

A

N side is at high potential relative to the P side.

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13
Q

What is the average value for barrier potential in PN junction ?

A

0.5 Volt

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14
Q

What is the relationship between the thickness of the depletion region, doping, and temperature?

A

The thickness of the depletion region is inversely proportional to both doping concentration and temperature.

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