Materials and fabrication methods Flashcards

1
Q

Graphene

A
  • 2D carbon sheet
  • chemically most reactive form of carbon
  • very high electrical and thermal conductivity
  • harder than diamond and 300 times harder than steel
  • electrons travels through graphene as if they have no mass with v=10^6m/s (Fermi velocity)
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2
Q

Four most important properties that differ Nano- and microscale material from macroscale material

A

1 gravitational forces become negligible and eletromagnetic forces begin to dominate
2 greater surface-to-volume ratios - mag. and chemical properties can be tuned, increased storage area relative to volume for drug delivery
3 random molecular motion become more important
4. quantum mechanism is used to describe motion and energy instead of classical mechanics (only nanoscale).

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3
Q

superparamagnetism

A
  • Unstable
  • describes the effect of random flips of the magnetisation direction in small ferroma. particles under the influence of temperature
  • Below a certain blocking temp T_B (Curie temp.)–> behaves like a ferromagnet
  • determine the upper bound for storage density in magnetic recording (ex. hard disc drives)
  • Each particle will be a magnetic domain, and the overall cluster will have no remanence, i.e. it
    behaves like a paramagnetic material - an external B-field is needed to magnetize the particle = the absence of an external field the particle do not retain any magnetization
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4
Q

Type of solid material, form of unit particle, force btw particles, example

A

MOLECULAR - atom or molecules, wan der waals, hydrogen bridges, glycine, surcrose

COVALENT NETWORK - atom in covalent bond network, covalent bonds, carbon (diamond), C60, SiO2

IONIC - positive and negative ions, electrostatic attraction NaCL - Sodium choride

METALIC - atoms, metalic bonds, Ni, Fe, Co

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5
Q

Miller indices

A
  1. define the intersection on the x,y,z axis
  2. Reciption of the intersection
  3. multi with the least common multiple of the intercepts
  • Importance of miller indices: For silicon crystal, (111) plan has more atoms per area than (100)
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6
Q

Paramagnetic material

A

have a magnetic susceptibility only in the presence of an external magnetic field, i.e. no resonance when the field is removed

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7
Q

ferromagnetic material

A

become paramagnetic when heated beyond their Curie temperatures. The heating randomizes the magnetic orientation and removes any remanence

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8
Q

Two approaches to manufacturing

A
  • Top-down - starting from bigger building blocks –> reduce into smaller pieces (motivated by manufacturing history)
  • Resolution is limited
  • uses well-established methods to pattern a bulk wafer (processes adapted from microchip manufacturing)
  • thin film deposition
  • Bottom-up - smaller parts are stacked together to obtain functional structures (motivated by nature´s way of growing things)
  • selected atoms or molecules are added to create structures
  • nanomanipulation, self-assembly or chemical methods
  • long range order difficult to achieve
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9
Q

substrates

A
  • The natural environment in which an organism lives.
  • more atoms per cm^2 –> oxidation faster, but etching is much slower
  • oxidation: an oxide layer on top of the bare substrate is often required (as a mask, insulating layer or sacrificial layer), important in microelectronics. The layer can be grown in an oxidation furnace, it consumes silicon in order to grow
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10
Q

substrates

A
  • The natural environment in which an organism lives.
  • more atoms per cm^2 –> oxidation faster, but etching is much slower
  • oxidation: an oxide layer on top of the bare substrate is often required (as a mask, insulating layer or sacrificial layer), important in microelectronics. The layer can be grown in an oxidation furnace, it consumes silicon in order to grow
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11
Q

additive process

A

Physical Vapor Deposition (PVD) - descibes a veriety of vacuum deposition methods that can be used to produce thin film and coatings. The material goes from a condensed phase –> vapor phase –> back to a thin film condensed phase.

Chemical Vapor Deposition (CVD) - the film materials are deposited by decomposition of chemicals on the surface of substrate

Electrodeposition

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12
Q

Different types of PVD (physical vapor deposition)

A

Thermal evaporation (avdunstning):

  • a source material is heated until it evaporates –> the evaporated material travels to the substrate where it condenses and is deposited.
    ex. heating sources: resistance, e-beam, RF, laser…
  • both metals and nonmetals

Sputtering:

  • Argon is ionized by a strong potential difference –> These ions acc. to a target –> After impact, target atoms are released and travel to the substrate and form a thin film of atoms
  • Shadowing effect (non-conformal coating) - due to the straight trajectory of vapor molecules.
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13
Q

Chemical Vapor Deposition (CVD) - Reaction mechanism

A
  • The chemicals are vaporized by heating up or reducing the air pressure –> condensate, “the hot gaseous material natually for a coating on the colder substrate <=> water vapor coats outside of the cold drinking glass on a hot day”
    Ex. sunglasses
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14
Q

Electrodeposition

A

uses the electric current to reduce dissolved metals (Cu^2+) at the chatode(-) to solid atom (Cu^2+ interact with CuCl = CuCl_2) –> form a deposit on the cathode.

  • electrolytic cell: consist a working (cathode) and a counter (anode) electrode. A third eletrode can be added to estimate the deposited volume by potentiometric measurements (voltage)
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15
Q

Lithography process

A

UV light and a mask with desired pattern are used to expose the photoresist and transmit the pattern onto a substrate/wafer.

  • Development: exposed resist is washed away while unexposed resist remains –>
    1. Deposition: metallic, semiconducting or insulating layers are evaporated or sputtered onto the surface –> photoresist is removed, leaving behind precisely deposited features
    2. Wet or Dry Etch: exposed sections are etched away while the resist protects the remaining areas –> photoresist is removed, leaving behind precisely etched features
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16
Q

Lithopgraphy - mask

A
  • Mask polarity: light field (region of interest is coated), dark field (region of interest is uncoated)
  • alignment is never perfect –> alignment errors should be taken into account when designing a chip
17
Q

Photoresist

A

Positive photoresist: light degrades the polymers resulting in the photoresist begin more soluble in developers
Negative photoresist: light polymerizes the rubbers in the photoresist to strengthen its resistance to dissolving in the developer

18
Q

Lithography process - exposure

A
  • Contact printing: high resolution (≤ 0.5 micrometer), mask and wafer can be easily damaged
  • Proximity printing: 2-4 micrometer resolution (diffraction effect), 10-25 micrometer gap (long mask life)
  • Projection printing: High resolution (≤ 0.2 micrometer), Image of mask reduced, scanning of small field, complicated and expensive optical set up. (lite som microscope)
19
Q

Subtractive process - Wet etching

A

Wet: removes material from a wafer using liquid phase etchant (purely chemical process)

  • Isotropic and anisotropic etching
  • Cheaper than the dry etching
20
Q

Substrative process - Dry Etching

A

reactive ion etching (RIE) - substrate is placed inside a reactor with several gases. The gasses => ions, which accelerates toward and reacts at the surface. (Chemical part of reactive ion etching = isotropic).
If the ions has high enough energy –> it can knock out the material without a chemical reaction (physical part of reactive ion etching = anisotropic)

Sputter etching - RIE without reactive ions. (physical part of reactive ion etching) Positive charged molecules attack to the surface (high energy bombardment)

Plasma etching - chemical part of reactive ion etching. This method can be done with simpler eq. than what RIE requires.

21
Q

Wet Etching - isotropic and anisotropic

A

Isotropic (same etch rate in all direction - bildar en halvcirkel)

  • room temperature, slightly above (<50°)
  • diffusion limited
  • etching is very fast
  • undercuts mask

Anisotropic (has diff etch rates in lateral and vertical –> depending on the orientation of the exposed crystal plane)

  • higher temperature
  • reaction rate limited
  • etching is slower
  • does not undercut the mask
  • Not very agitation sensitive
22
Q

Other machining techniques

A
  • Ultra-high precision matching

- laser machining (lithography, subtractive, additive)…

23
Q

Surface and bulk micromachining

A

surface- adding layers to build up structures on the wafer surface, thin film deposition

bulk - removing bulk silicon to define device structures, wt or dry etching.

24
Q

Nanofabrication -

A
  • most of the micro-fabrication techniques are used as well, but some additional techniques are required in order to achieve structures with nano-scale features
25
Q

lift off

A

Lift-off process in microstructuring technology is a method of creating structures (patterning) of a target material on the surface of a substrate (e.g. wafer) using a sacrificial material (e.g., Photoresist). It is an additive technique as opposed to more traditional subtracting technique like etching.