LED's Flashcards

1
Q

Carrier recombination

A

When the electron falls down from conduction
band and fills in a hole in valence band, there is an
obvious loss of energy.

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2
Q

indirect band-gap material,

A

-Para o eletrão ir da banda de condução para a bamda de valencia tem de mudar o momento
-Tem no entanto de ocorrer conservação do momento
-Para ir da banda de condução para a de valencia geram-se então fonões
-Os fonões tem energia como momento, permitindo conservação do momento

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3
Q

Direct band-gap semiconductors

A

-Não há variação de momento(O que é bom pq os fotões não tem momento associado)
-O excesso de energia da recombinação resulta em calor ou um fotão de luz.
-Esta transição conserva energia e dá luz quando um eletrao e um buraco recombinam

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4
Q

Resumindo

A

Direct Bandgap:
–Base of the conduction band is matched to the max height of the valence band
–Recombination through the emission of a photon
*Indirect Bandgap
–direct recombination would require a momentum change
–Recombination centers are required to recombine CB to VB bands
–The result is a phonon emission (lattice vibration) that propagates across the lattice

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5
Q

Recombination centers

A

-In addition to the band-to-band transition, radiative recombination could be happened via recombination centers generated by impurities.
Some indirect gap materials can have a reasonable efficiency if they are doped with certain impurities (isoelectronic center)
-The isoelectronic center is an efficient radiative recombination center and can largely enhance the
probability of radiative processes in an indirect gap material

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6
Q

Isoelectronic centers

A

-Isoelectronic means that the centre being introduced has the same number of valance electrons as the element it is replacing.
-It doesn’t act as a dopant.
-Isoelectronic centres provide a ‘stepping stone’ for electrons in so that transitions can occur that are radiatively efficient.
-Because the effective transition is occurring between the isoelectronic centre and VB edge, the photon that is emitted has a lower energy than the band-gap energy (avoids re-absorption)

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7
Q

Non-radiative recombination

A
  • Defeitos relacionados com níveis de energia podem surgir de impurezas químicas ou de defeitos estruturais
    -In a LED the non-radiative recombination is not desirable, but it is purposely increased in p-n diodes to increase the speed.
    -The defected-related non-radiative recombination is also called Shockley-Read-Hall recombination. Such recombination is very important at the surfaces of
    devices, since there is usually a high density of defects.
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8
Q

LEDs basic operation mechanism

A

-LEDs are pn junctions usually made from direct bandgap semiconductors

-Direct electron hole pair (EHP) recombination results in emission of a photon

-Photon energy is approximately equal to the bandgap energy, Eg

-Application of a forward bias drops the depletion region allowing more electrons into the p side of the device and increasing the probability of recombination in the depletion region

-The recombination zone is called the active region

-Light emission from EHP recombination as a result of minority carrier injection as shown here is called injection electroluminescence

-The statistical nature of this process requires that the p side be sufficiently narrow to prevent
reabsorption of the emitted photons

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8
Q

Injection electroluminescence

A

Photon emission occurs whenever we have injected minority carriers recombining with the majority carriers.
* If the e- diffusion length is greater than the hole diffusion length, the photon emitting region will be bigger on the p-side of the junction than that of the n-side.
* Constructing a real LED may be best to consider a n++p structure.

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8
Q

LEDs materials(White)

A

There are two primary ways of producing high intensity white-light using LEDs:
-One is to use individual LEDs that emit three primary colors (red, green, and blue), and then mix
all the colors to produce white light.
-the other is to use a phosphor material to convert monochromatic light from a blue or UV LED
to broad-spectrum white light, much in the same way a fluorescent light bulb works.

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8
Q

Materiais fosforescentes

A

-Phosphors are stable materials and can have quantum efficiencies of close to 100%. Dyes
also can have quantum efficiencies of close to 100%.
-Dyes can be encapsulated in epoxy or in optically transparent polymers. However, organic
dyes have finite lifetime.

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8
Q

LEDs structure

A

LEDS are typically formed by epitaxially growing doped semiconductors layers on suitable
substrate
-film and the substrate have mismatched lattice sizes then the
lattice strain on the LED leads to crystalline defects that cause indirect recombination of EHPs
and a loss of electroluminescence (photon emission). Thus the substrate is usually the same
material as the epitaxially layers
-To insure that recombination occurs on the p side, the n side is very heavily doped. Photons emitted toward the n side become absorbed or reflected back at the substrate interface

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8
Q

White LEDs

A

-Wavelength converter materials include phosphors, semiconductors and dyes.
-The parameters of interest are absorption wavelength, emission wavelength and quantum efficiency
-Common wavelength converters are phosphors, which consist of an inorganic host material doped with an optically active element.
-The optically active dopant is a rare earth element, oxide or another compound.

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9
Q

Photon loss

A

-absorption in the material (making the junction close to the
emitting surface)

-absorption in the substrate area (using a transparent substrate)

-total internal reflection at the surface (suppressed by using a dielectric encapsulation dome)

-transmission losses at the interface
(minimized by using a dielectric encapsulation dome)

-reflection at the top M/S interface
(minimized by using as small an area as possible of top metal contact)

-absorption in the top contact metal
(minimized by using as small an area as possible of top metal contact)

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9
Q

LEDs efficiency

A

Do mais eficiente ao menos:
-band-to-band recombination in direct gap material,
– recombination via isoelectronic centres,
– recombination via impurity (not isoelectronic) centres,
– band-to-band recombination in indirect-gap materials.

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10
Q

Optimizing Light Output vs. TIR

A

-Not all light reaching the semiconductor air interface escape the surface due to TIR
-Como solução pode-se alterar a forma da superficie do semicondutor para uma esfera

10
Q

Problems of the homojunction LED

A

-Strong non-radiative recombination via high density
states at the emitting surface
-Low carrier injection efficiency

10
Q

Advantages of a heterojunction LED

A

-higher quantum and coupling efficiency
-Do not suffer from poor surface conditions since the active region is not near the surface..
-Increased carrier injection efficiency due to the low doping active layer.
-The photons emitted are also not absorbed in the top or bottom region because the photon energy is smaller than the bandgap of the n- or p-region.

11
Q

Heterojunction High Intensity LEDs

A

-The refractive index, n, depends directly on the bandgap
-wide bandgap semiconductors have lower refractive
indices.

12
Q

LEDs performance issues

A

-Light-current characteristics:the light-current of the LED is essentially linear except for high drive current when the light output saturated.
- poor Spectral purity
-Temporal response
-Temperature dependance.