Lectures 19&20 (Magnetoresistance and Spin-Transfer Torque) Flashcards

1
Q

What were read/write heads on hard disks replaced with?

A

Magnetic pole pieces to write and induction to read back data. Read part of head was replaced with MR sensor

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2
Q

Why did read part of read/write heads need replacing?

A

As data bits shrank, the stray field got harder to read and disk had to rotate faster to obtain readback signal

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3
Q

In an anisotropic field sensor, is current parallel or perpendicular to M larger resistance?

A

Current parallel = larger resistance

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4
Q

Why does current parallel to magnetisation have larger anisotropic MR?

A

The scattering is more effective when the current is normal to the plane of the electron orbits

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5
Q

In spin-dependent transport, what is the Mott model and why can it be used?

A

Mott 2-current model treats spin up and down conduction channels as independent

Since spin-flip scattering is very rare (100:1) in comparison to normal scattering

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6
Q

How will a current become spin polarised?

A

s-electrons (highly conducting) are scattered into available d-states

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7
Q

In exchange bias, how to the spins at the surface couple?

A

Via exchange

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8
Q

What effect does exchange bias have on the hysteresis loop? Why?

A

Shifts it left due to needing to overcome an extra energy barrier (exchange field) to reverse the magnetisation from exchange coupling between FM and AFM

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9
Q

In tunnel MR, what is conductance proportional to?

A

No. electrons available to tunnel from one FM layer and the number of empty states available in the other

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10
Q

What is P value for a large TMR?

A

~1

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11
Q

How does spin-transfer torque work?

A

Current polarised by spin-dependent scattering in an FM layer

If this current passes into a second FM in which M is not aligned with the first, the transverse component of the spin current is absorbed - this leads to dl/dt and so a torque on M

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