lecture 4 Flashcards

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1
Q

why diff

A

yo enhance properties of materials, they are often
heat-treated e.g. steel hardening , sintering, plating, …

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2
Q

diff occurs in

A

Diffusion occurs in gases (scents)
and liquids (ink in water)
Our main focus here is solidstate diffusion

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3
Q

types of diffusion

A

Solid State Diffusion
self diffusion
diffusion of elements such as hocn

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4
Q

solid state diffusion

A

After a high-temp. heat treatment
(atoms move from larger concentration to lower conc.)

Also called interdiffusion or impurity diffusion

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5
Q

self diffusion

A

In an elemental solid, atoms migrate as well
It can not be observed by noting change in chemical composition

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6
Q

diffusion mechanisms

A

vacancy diffusion
interstitial diffusion

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7
Q

vacancy diffusion

A

Need
adjacent vacant site: ↑ temp. è ↑ # of vac.
* Need energy to break atomic bond and jump: ↑ temp.
* Both self-diffusion and inter-diffusion can occur through this mechanism

refer to formula

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8
Q

interstitial diffusion

A

Small atoms such as hydrogen, carbon, nitrogen & oxygen
* Requires energy to squeeze past atoms
* Typically faster than vacancy diffusion:
* More site available
* Less energy required

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9
Q

what is diffusion flux and how do we measure it

A

quantify the amount or rate of diffusion

Measured empirically
* Make thin film (membrane) of known surface area
* Impose concentration gradient
* Measure how fast atoms or molecules diffuse through the membrane

refer to formula

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10
Q

ficks first law

A

a formula for when Steady, linear, state diffusion i.e. concentration profile doesn’t change with time

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11
Q

ficks 2nd law

A

Non-steady state diffusion
* The concentration of diffusing species is a function of both time and
position C=C(x,t)

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12
Q

Diffusion Rate and Temperature

A

refer to formula
* Diffusion coefficient increases with increasing T

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13
Q

Diffusion in Semiconducting Devices

A

Doping – Diffusion of very small concentrations of atoms of an impurity
(e.g., P) into the semiconductor silicon.

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14
Q

Doping process

A
  1. Deposit P rich
    layers on surface
  2. Heat treat
    the sample to
    drive in P
  3. Result is P doped
    semiconductor
    regions
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15
Q

Diffusion FASTER for…

A

Diffusion FASTER for…
* open crystal structures
* materials w/secondary
bonding
* smaller diffusing atoms
* lower density materials

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16
Q

Diffusion SLOWER for…

A

Diffusion SLOWER for…
* close-packed structures
* materials w/covalent
bonding
* larger diffusing atoms
* higher density materials