Introduction to Electronics and Semiconductor Diodes Flashcards
Pentavalent Impurities
P(Phosphorous), As(Arsenic), Sb (Antimony)
Trivalent Impurities
Al, Ga, In (Al not used for doping)
n-type and p type
5 valence e- (pentavelent) (nigga)
formed by doping with trivalent
ex: silicon with Sb => valence e-
P type:
Si with B (trivalent) => hole
Diode
p-type and n-type sandwiched together, to form depletion region
p => positive terminal
n=> negative terminal
forward biased
reverse biased
a material connected to the same polarity terminal of the voltage source
a material connected to opposite polarity terminal of the voltage source
No Bias
Depletion => recombination of holes and e-
- remaining ions of (+) e- (-) hole, ion carriers present due to depletion region => repulsion, ions cant move
Reverse Bias
p terminal = (-) terminal
n terminal = (+) terminal
thus holes are e are pulled, forming a greater depletion region
minority charge carriers= recombination,
greater depletion region = more energy for recombination
thus no current in reverse bias
Forward Bias
pushes holes in p and
e- in n to recombine with ions => smaller depletion region
Knee voltage/cut- in voltage.
minimum V across the diode for it to start conducting
Avalanche breakdown
in reverse bias as V ↑ free charges get v(m/s) => collide with other atoms => more charge carries produced (energy from acquired p.e.)
cycle is exponential
=> covalent bonds broken
Zener Diode
when P and N are heavily doped in a semiconductor diode
- narrow depletion region
- small reverse bias V => strong electric field
=> due to field => covalent bonds broken => lot of free charge carriers
Effect of variation in temperature across a semiconductor diode
rise in temp = more electron-hole pair => greater I, conductivity
Ideal diode
forward biased = no resistance (closed switch)
reverse biased = infinite resistance (open switch )
Practical diode
forward biased:
conducting at knee voltage
reverse biased: no current due to majority of charges (minority charges ignored)
(open switch )
very small resistance (not zero) when forward biased => forward resistance
high resistance (not ∞) when reverse biased => reverse resistance
DC or Static resistance
application of a dc voltage to a circuit containing a semiconductor diode
Typically,
Forward bias : 10 Ω to 80 Ω
Reverse Bias: 10 MΩ
Dynamic resistance or AC
application of a small AC voltage to semiconductor
diode => AC resistance
straight line drawn tangent to the curve through the Q –point
= AC resistance
ac resistance of a diode in the active region will range 1 Ω - 100 Ω.
Average AC Resistance
applied input signal is sufficiently large to produce a broad swing
R = straight line drawn btw 2 by the max and min values
Diode approximation
used to approximate the nonlinear behavior of real diodes to enable
calculations and circuit analysis.
First Approximation
Ideal Diode Characteristics
diode => closed switch
with 0 V drop when forward-biased
open switch when reverse biased
Second approximation
Simplified Diode Characteristics
Under forward-bias =>
ON when a V of VK
or VB is present
off if V < VK
diode is represented by
VK in series with closed switch.
Under reverse bias, it is an open switch
Third Approximation
Piecewise-linear equivalent
increase in the voltage across diode when I increases.
closed switch in series with VK and resistance RB
when forward biased.
closely = practical diode.
reverse – bias, => open switch and no current
flows through it
why should forward resistance be ignored
It’s assumed that the forward resistance of the diode is
usually so small compared to the other series elements
of the network that it can be ignored.
AND circuit with diode
output can either be 9.3V or zero as V is measured after diode
OR circuit with diode
output can either be 0 or 0.7V as voltage of diode is measured