First basics of optics and diffraction Flashcards
Photolitography improvements
- Reduction in wavelength of the UV light source.
- Increase in numerical aperture.
- Chemically amplified DUV resists
- Resolution enhancement techniques (e.g., phase-shift masks and optical proximity correction)–>k1 factor reduction
- Wafer planarization (chemical mechanical
planarization, or CMP) to reduce surface topography. - Advances in photolithography equipment (e.g., stepper and step-and-scan).
Exposure tool evolution
- Contact (1:1) = mask in contact with wafer (image ratio 1);
- Proximity (1:1)= mask next/close to wafer (image ratio 1)
- Projection (1:1) = projection lens between mask and wafer (image ratio 1);
- Projection (5:1) stepping = projection lens between mask and wafer (image ratio 5);
- Projection (4:1) step and scan = projection lens between mask and wafer (image ratio 4);
- Direct writing= no mask, direct writing in resist using eBeam or laserbeam
Exposure tool evolution: contact vs proximity
CONTACT Advantages: -not complex (compared to projection); -cheap system; -fast: wafer exposed at once. Disadvantages: -the mask contacts the wafer so mask wear and contamination: need of periodic cleaning to avoid repeating defects on subsequent wafers; -no magnification; -mask usually the same size as the wafer: large and expensive
PROXIMITY
Advantages:
-fast: wafer exposed at once;
-the mask does not contact the wafer so no mask wear or contamination.
Disadavantages:
-mask separated from the wafer: greater diffraction leads to less resolution;
-mask usually the same same of the wafer: large and expensive.
Neither:
-more complex or more expensive
Exposure tool evolution: 1x projection aligners
During the mid 1970’s optically based mask generation tools began to reach their limits because 1:1 masks needed to grow in size to match the larger wafers. Moreover the masks didn’t last very long because they were physically in contact with the wafer and so would get damaged and pick up defects fast.
Later on (1980–1990), projection systems were introduced, in which the image of a mask is projected by an optical system onto the wafer. The distance between mask and wafer became extremely large and contamination problems due to physical contact were no longer a concern.
Initially the masks remained 1x and contained the complete image to be projected onto the wafer, although only part of the image was exposed simultaneously to keep the complexity of the optics under control.
Mask and wafer are then moved simultaneously, so the synchronization between the wafer and mask scanning had to be very accurate.
Motivations for optical projection litography
As soon as optical lithography started to be based on projection systems, using an optical “lens” between the mask and the wafer, the principle of today’s optical lithography has been established and still remain unchanged for many years.
Light diffration with lens:
- diffracted light collected by the lens (optical lens can collect diffracted light and enhance the image);
- less diffraction after focus by the lens (short wavelength waves have less diffraction).
Optical projection basics
Let’s consider a generic projection system.
It consists of a light source, a condenser lens, the mask, the objective lens and finally the resisti-coated wafer.
The combination of light source and condenser lens is called the illumination system.
In optical design terms, a lens is a system of
(possibly many) lens elements. Each lens element is an individual piece of glass (refractive or dioptric element) or a mirror (reflective or catoptric element). The purpose of the illumination system is to deliver light to the mask (and eventually into the objective lens) with sufficient intensity, the proper directionality and spectral characteristics, and adequate uniformity across the field.
The light then passes through the clear areas of the mask and diffracts on its way to the objective lens.
The purpose of the objective lens is to pick up a portion of the diffraction pattern and project an image onto the wafer, which, one hopes, will resemble the mask pattern.
The first and most basic phenomenon occurring here is the diffraction of light.
Diffraction
It is the fundamental phenomenon that is responsible for image formation in optical litography. The diffraction theory simply describes how light propagates and this propagation includes the effects of the surroundings(boundaries).
Huygen’s principle
Any wavefront can be thought of as a collection of radiating point soures (spherical secondary wavelets). The new wavefront at some later time can be constructed by summing up the wavefronts from all of the radiated spherical waves (envelope of these wavelets).
Following Huygen’s principle, electromagnetic fileds can be thought of as sums of propagating spherical or plane waves.
Fresnel diffraction theory
Joseph Fresnel: diffraction mathematical theory. A summation turned into an integral phase of light when adding the propagating spherical waves so he basically added the concept of interference discovered by Young into the original Huygens principle.
Huygens-Fresnel principle
Huygens-Fresnel: every unobstructed point of a wavefront, at a given instant, serves as a source of spherical secondary wavelets with the same frequency as that of primary wave. Amplitude of optical field at any point beyond is the superposition of all these wavelets considering their amplitudes and relative phases.
The occurrence of diffraction depends on the relative size of aperture.
When the wavelength of incident light is in the order of aperture, the unobstructed point in the aperture acts as secondary source and the waves will spread out at large angles into the region beyond obstruction. If the incident wavelength is much smaller than the aperture, diffraction effect can only be observed within a short distance behind the aperture and beyond this region, shadow begins.
Kirchhoff principle of diffraction
Kirchhoff: he put in a more rigorous footing Huygens’ scalar diffraction theory. Fresnel’s formulas are in fact a simplification of Kirchhoff’s formulation for the case of distance away from the diffracting plane (i.e. the distance from the mask to the objective lens) much greater than the wavelength of light.
Fraunhofer principle of diffraction
Fraunhofer: if the distance to the objective lens is very large.
Coherently illuminated mask
With a coherently illuminated mask, meaning the illumination is only from one single direction, the image in intensity is the aerial image.
Tipically with coherent illumination, fringes are created in the diffuse shadowing between light and dark, a result of interference. Only when there is separation between the obstacle and the recording plane rectilinear propagation occurs: CONTACT EXPOSURE.
As the recording plane is moved away from the obstacle, there is a region where the geometrical shadow is still discernible. At close distances, where geomtric shadowing is still recognizable, near-field diffraction, or Fresnel diffraction, dominates: PROXIMITY EXPOSURE.
Beyond this region, far from the obstacle, the intensity pattern at the recording plane no longer resembles the geomtrical shadow, but contains areas of light and dark fringes. In the far-field Fraunhofer diffraction dominate: PROJECTION EXPOSURE.
What is contact exposure?
When talking about a coherently illuminated mask, fringes are created in the diffuse shadowing between light and dark, a result of interference.
Only when there is separation between the obstacle and the recording plane rectilinear propagation occurs: CONTACT EXPOSURE.
What is proximity exposure?
As the recording plane is moved away from the obstacle, there is a region where the geometrical shadow is still discernible. At close distances, where geomtric shadowing is still recognizable, near-field diffraction, or Fresnel diffraction, dominates: PROXIMITY EXPOSURE.