Electronics Manufacturing Flashcards

1
Q

what is lithography

A

technology for rapid and accurate manufacture of complex/repetitive components

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2
Q

requirements of packaging for IC

A
  • connections for signal lines and power
  • physical structure to support and protect the circuit
  • mechanisms for heat removal
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3
Q

moore’s law

A

the number of transistors on a chip will double about every two years

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4
Q

rent’s rule

A

number of IOs that a circuit needs will increase with complexity
- I = bC^p

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5
Q

TAB Bonding

A
  • tape automated bonding
  • relies on flexible tape instead of lead-frame
  • IC bond pads gold bumped
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6
Q

flip chip assembly

A

smallest, lightweight

short electrical path = good performance

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7
Q

flip chip process

A
  1. wafer bumping - apply UBM, apply solder to form bumps
  2. align and reflow
  3. apply underfill
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8
Q

comparison bond pads:

A

Wire: standard
TAB: Gold
flip chip: Nickel

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9
Q

comparison speed

A

Wire: slow
TAB: fast
flip chip: fast

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10
Q

comparison tooling/set up costs

A

wire - low
TAB - high
flip chip - medium

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11
Q

comparison electrical performance

A

wire - ok
TAB - better
flip chip - best

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12
Q

comparison size

A

wire - ok
TAB - ok
flip chip - the best

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13
Q

comparison yield

A

wire - ok
TAB - good
flip chip - poor

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14
Q

comparison PCB compatibility

A

wire - needs Au
TAB - good
flip chip - excellent

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15
Q

SMT

A

surface mount technology
smaller
cheaper
higher pin counts

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16
Q

lithography expose time

A

= sensitivity/intensity

17
Q

PCB manufacture process single sided

A

drill - plating resist - etching - solder resist - curing

18
Q

types of processes double sided PCB manufacture

A

eopper electroplating

- photoresist lamination

19
Q

Multilayer PCB

A
  • more track per unit area

- replacement of interwiring = smaller, lighter, cheaper

20
Q

soldering

A

joining of two materials using a molten metallic filler (with lower melting point)

21
Q

soldering temp

A

< 400 degrees

22
Q

brazing temp

A

> 400 degrees

23
Q

yield calculation

A

= e^(-AD)

A = area D = defect density