Electricity Flashcards
current
I
- rate of flow of charge
- I = Q/t
- current (Amperes, A), charge (coulombs, C), time (seconds, s)
- current is measured with an ammeter (in series)
potential difference
voltage (V)
- the energy change per coulomb of charge
- V = E/Q
- voltage (volts, V), energy (joules, J), charge (coulombs, C)
- measured with a voltmeter
- in a power supply, the energy is given to the charge
- in a component, the energy is used by the charge
resistance
R
- opposition to the flow of current
- measured with an ohmeter
- depends on the length, thickness, and type of wire; as well as temperature
- R α l, Resistance is proportional to length
potential divider
- a series circuit with two or more resistors which each receives a share of the supply voltage
- the voltage is split in proportion to resistance, V α R, so: V1/V2 = R1/R2
power (electricity)
P
- the electrical energy transferred per second
- P = E/t P = VI P = I2R P = V2/R
direct current
DC
when current flows in only one direction at all times
e.g. cell, battery
alternating current
AC
when current changes direction and instantanious value with time
e.g. mains supply, a.c. lab power supplies
mains voltage
230V, 50Hz (A.C.)
r.m.s. value
- root mean square
- squaring the number turns negative numbers positive, and square rooting them keeps them positive
- the mean is the average value of voltage, current and power of an a.c. supply
- Vrms = Vpeak/√2
allows for comparison between DC and AC
peak voltage
Vpeak
- the maximum voltage in an a.c. supply
- for an a.c. voltage wave on an oscilloscope screen, it is given by the crest of the wave (when centered)
time-base
- setting on an oscilloscope which contols the time per cm or division on the horizontal axis
- can be used to find the frequency of an a.c. supply
y-gain
- setting on an oscilloscope which controls the voltage per cm or division on the verticle axis
- can be used to find the peak voltage of an a.c. supply
period
T
- the time taken for one wave to pass a point
- on an oscilloscope, it is given by the time-base setting multipied by the number of divisions
frequency
f
- the number of waves per second
- f = 1/T f = N/t v=fλ
electromotive force
e.m.f. (E)
- the number of joules/energy available to each coulomb of charge passing through the cell
- E = V + Ir
internal resistance
r
- the opposition to the flow of charges through a circuits power supply
- the internal resistance obeys ohms law
external resistance
R
- opposition to the flow of charges externally to the source
- aslo known as the load resistance or the load
terminal potential difference
t.p.d.
- the potential difference that can be measured at the terminals of a source
- Vt.p.d = E - Ir
lost volts
- it is the potential difference required for current to pass through the source
- V lost = Ir
short circuit
- this happens when the load resistance is zero
- in practice the load resistance has to be made as low as possible which can result in very high currents
open circuit
- this happens when the load resistance is infinite
- this means no current is flowing
- in pratice this is done by a switch or a break/fault in the circuit
capacitance
- the ability of a device to store electrical charge
- the ratio of charge stored to the p.d. across the two conductors
- C = Q/V
work done in a capacitor
- a negatively charged plate stores electrons; work is done each time an additional electron is added
- in a graph of Q/V, the area under the graph is = work done, and the gradient of the line = capacitance
- E = 1/2QV E = 1/2CV2 E = 1/2(Q2/C)
intristic semiconductor
pure semiconductor
n-type semiconductor
- contains atoms with 5 valence electrons
- extra electrons are free to move which allows conduction due to free charge carriers
p-type semiconductors
- contains some atoms with 3 valence electrons
- these create holes which allow electrons to flow into therefore conduction occurs
forward bias
- current flows (n-type to negative, p-type to positive)
- electrons move through diode by moving from the conduction band of the n-type to the conduction band of the p-type
- some electrons drop from the conduction band to the valence band in the depletion layer losing energy
reverse bias
- current doesn’t flow (there are exemptions)
- the electrons in the n-type are attracted to the +ve end of the supply, electrons from the -ve supply combine with holes in the p-type
- this enlarges the depletion layer and therefore the p.d. across it so very little current can flow through the energy barrier
small amounts of current that get through is called leakage current
LED
how does it work
- electrons in the conduction band of the n-type semiconductor move towards the conduction band of the p-type semiconductor
- a free electron is attracted to a hole and falls (from conduction to valence band) losing energy
- this energy is emitted in the form of a light photon (colour determined by the energy lost)
larger E => larger f => smaller wavelength
photodiode
how does it work
- electrons absorb energy from photons
- electrons move from the valence band to the conduction band
- electrons move towards the n-type semiconductor producing a potential difference