Electricity Flashcards

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1
Q

What is the definition of emf?

A

EMF is the energy supplied by the cell to each coulomb of charge

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2
Q

What is the definition of current ?

A

Current is the number of coulombs of charge passing a point in 1 second

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3
Q

What is the definition of capacitance?

A

Capacitance is the amount of charge stored per volt.

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4
Q

What is a.c.?

A

a.c. is alternating current - direction of current is continuously changing.

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5
Q

What is d.c.?

A

d.c. is direct current - current flows in one direction only, negative to positive.

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6
Q

What is the definition of potential difference?

A

Potential difference is the number of joules of energy transferred per coulomb of charge.

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7
Q

What is the unit for capacitance (C)?

A

farads F

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8
Q

How would you calculate the peak voltage of the signal shown on the oscilloscope screen?

A

Measure distance from centre line to top of wave (peak), and multiply this by the number of volts per division

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9
Q

What is the definition of r.m.s. voltage (Vrms)?

A

The r.m.s. voltage (Vrms), or the root mean square voltage, is the value of an a.c. voltage which will deliver the same amount of energy as a d.c. voltage

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10
Q

What is meant by an ‘open circuit’?

A

An open circuit is one in which a current is not flowing (e.g. when a switch is open).

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11
Q

What is meant by a ‘short circuit’?

A

A short circuit is one in which there is no external resistance.

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12
Q

What factors affect the time taken for a capacitor to charge (or discharge)?

A

increasing or decreasing the total resistance of the circuit.

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13
Q

What are the majority charge carriers in n-type semiconductor material?

A

In n-type semiconductor, large number of free electrons is present. Hence, free electrons are the majority charge carriers in the n-type semiconductor. The free electrons (majority charge carriers) carry most of the electric charge or electric current in the n-type semiconductor.

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14
Q

In semiconductors, what is meant by the term doping?

A

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties

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15
Q

In a p-n junction, what is meant by forward bias

A

Here, the voltage potential connections are as follows: -Ve (negative) to the N-type material and +Ve (positive) to the P-type material, across the diode. The effect is a decrease in the PN junction depletion layer.

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16
Q

In a p-n junction, what is meant by reverse bias?

A

During this biasing condition, the voltage potential connections are as follows: +Ve (positive) to the N-type material and -Ve (negative) to the P-type material, across the diode. The result of this is an increase in the PN junction depletion layer.