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ELECS Flashcards

1
Q

Calculate the threshold voltage of a silicon
diode at a temperature of 0deg if at 25deg it has
a threshold of 0.7V
A. 0.72
B. 0.74
C. 0.76

A

C

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2
Q

The reverse saturation current of a diode at
20deg is 10nA. What will be the value of the
reverse saturation current at 100 deg?
A. 2.56uA
B. 2.75uA
C. 2.43uA
D. 2.63uA

A

A

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3
Q

Two most prevalent IC technologies are
A. BJT and FET
B. Bipolar and MOS
C.JFETS and MOSFETS
D. NMOSand PMOS

A

B

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4
Q

First basic processing step done on a silicon
wafer is?
A. oxidation
B. ion implantation
C. diffusion
D. deposition

A

A

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5
Q

It is the movement of the impurity atom at the
surface of the material into the bulk of the
material
A. ion implantation
B. etching
C. doping
D. diffusion

A

D

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6
Q

It is a process by which film of various
materials can be laid out on the silicon wafer
A. oxidation
B. ion implantation
C. diffusion
D. deposition

A

D

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7
Q

Which class of amplifier has the highest
efficiency?
A. Class A
B. Class C
C. Class B
D. Class D

A

??

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8
Q

How much energy in joules is required to
move a charge of 6C through a potential
difference of 3 V?
A. 9J
B. 3J
C. 18 J
D. 2J

A

C

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9
Q

6 A series diode circuit with a voltage source
of 10 V is connected to a 500ohm resistor.
Determine the diode current
A18.6 mA
B 16.8 mA
C14.8 mA
D15.7mA

A

A

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10
Q

The 18 V output voltage of a power supply
is applied to a zener diode voltage regulator
through a 270-ohm series resistor The zener
voltage is 10 V and the load resistance is 1 ΚΩ
Determine the load current
A10mA
B 19.6 mA
C29.6 mA
D15.6 mA

A

A

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11
Q

In an inverting amplifier, Ri = 1 ΚΩ, Rf = 01
Mohm and Vi = 0.6 V. If the op amp has an
input bias current of 80 nA, the output offset
voltage is
A79.2 V
Β 8uV
C8mV
D80.2 nV

A

A

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12
Q

Calculate the output offset voltage of an
inverting op amp circuit with VIO=12mV Ri = 2
kΩ and Rf = ‘50 ΚΩ
A91.2 mV
B 94.2 mV
C91.4mV
D92.4 mV

A

A

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13
Q

Calculate the output offset voltage of an
circuit with R1 = 2 kΩ and Rf = 150 kΩ an input
offset current, IIO
A. 15 mV
B 25 mV
C20mV
D30m

A

A

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14
Q

In normal operation an n-p-n trarisistor
connected in common-base configuration has
A. the emitter at a lower potential than the base
B. the collector at a lower potential than the
base
C. the base at a lower potential than the emitter
D. the collector at a lower potential than the
emitter

A

D

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15
Q

The closed-loop input impedance with an
ICVS amplifier is
A Usually larger than the open-loop input
impedance
B Equal to the open-loop input impedance
C Sometimes less than the open-loop
impedance
DIdeally zero

A

D

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16
Q

Negative feedback does not improve
A Stability of voltage gain
B Nonlinear distortion in later stages
COutput offset voltage
DPower bandwidth

A

D

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17
Q

Calculate the threshold voltage of a silicon
diode at a temperature of 0°C if at 25°C. it has a
threshold voltage of 0.7 V.
A. 0.72 V
B. 0.74 V
C. 0.76
D. 0.77

A

C

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18
Q

If 27 Jof energy is expended in moving 3 C of
charge between two points, what is the electric
potential difference between these two points?
A. 6 V
B. 9V
C. 8 V
D. 12 V

A

B

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19
Q

A 4-band resistor has the following colors:
blue, red, gold, gold. What is its value and
tolerance?
Α. 0.62 Ω ± 5%
Β. 6.2 Ω ± 5%
C. 62 Ω±5%
D. 62 Ω ±10%

A

B

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20
Q

If a short circuit is placed across the leads of
a resistor, the current in the resistor itself would
be
A. zero
C. the same as normal
D. excessively high
B. much higher than normal

A

C

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21
Q

Suppose you double the voltage in a simple,
circuit & cut the resistance in half. The current
will become
A. Four times as great.
C. The same as it was before.
B. Twice as great.
D. Half as great.

A

A

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22
Q

he circuit has a total resistance of
473,332ohnms and draws 4???. The best
expression for the voltage of the source is?
A. 2082V
B. 110kV
C. 2.1kV
D. 2.08266kV

A

C

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23
Q

You have an unlimited supply of 1-w, 100-Ω
resistors. You ed to get a 100-2, 10-W resistor.
This can be done most cheapl, y means of a
series-parallel ma’rix of
A. 3 X 3resistors.
B. 4 X 3resistors.
C. 4 X 4resistors.
D. 2 X 5resistors.

A

A

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24
Q

Four resistors are connected in serie, across
a 6.0-V battery. The values are R1- 10 Ω, R2 =
20 Ω, R3 = 50 2, and R4 = 100 Ω. Τ. voltage
across R2 is:
A. 0.18 V.
B. ??
C. 5.6 mV.
D. 670 mV

A

D

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25
Q

How much total energy is converted by a
1-horsepower motor in 1)
A. 7.46 kWh
B. 8.32 kWh
C. 8.59 kWh
D. 9.32 kwn

A

A

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26
Q

A heater with a resistance of 8ohm is
connected across the 120-V line. How much
curtant does it draw?
A 9A
B. 18mA
C. 1.5 A
D. 150 mA

A

A

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27
Q

A potentiometer is a
A. three-terminal devices used to vary the
voltage in a circuit two-terminal devices used to
vary the current in a circuit
B. two terminal device

A

A

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28
Q

How much is the voltage __ a open
component in a series ___?
A. The full applied voltage, VT
B. The voltage is slightly higher than normal
C. 0V
D. it cannot be determined

A

A

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29
Q

A voltage of 120 V is applied acı oss two
resistors, R1 and R2, in series. If the voltage
across R2 cquals 90 V, how much is the voltage
across R1?
A. 90 V
B. 30 V
C. 120 V
D. Cannot be determined

A

B

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30
Q

If a resistor in a series circuit is shorted, the
series current, I
A. decreases
B. stays the same
C. increases
D. drops to zero

A

D

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31
Q

A swamping resistor in a common-emitter
amplifier.
A. Stabilized the voltage gain
B. Increases the voltage gain
C. Reduces distortion
D. Both a and c

A

D

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32
Q

The input signal to a transistor amplifier
results in saturation during part of the cycle.
This produces:
A. The greatest possible amplification.
B. Reduced efficiency.
C. Avalanche effect.
D. Nonlinear output impedance.

A

B

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33
Q

If the collector resistor decreases to zero in
a base-biased circuit, the load line will become
A. Horizontal
C. Useless
B, Vertical
D. Flat

A

B

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34
Q

the emitter i resistance decreases, and the
A. Q point moves up
B. collector current decreases
C. Q point stays where it is
D. current gain increases

A

A

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35
Q

the disadvantage of base bias is that
A. it is a very complex
B. it produces low gain
C. It is too beta-dependent
D. it produces high leakage current

A

C

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36
Q

In a voltage divider bias, od pup transistor,
there is no base current but the base voltage is
approximately
correct.
The most likely
problem(s) is/are
A. the bias resistor is open
B. the collector resistor is open
C. the base-emitter junction open
D. answers B and C

A

D

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37
Q

A certain common-emitter amplifier has a
voltage gain of 100. If the emitter bypass
capacitor is removed
A. the circuit will become unstable
B. the voltage gain wilt decrease
C. the voltage gain will increase
D. the Q-point will shift

A

B

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38
Q

Each stage of a four stage amplifier has a
voltage gain of 15. The overall voltage gain is?
A. 60
B. 15
C. 50,625
D. 3,078

A

C

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39
Q

For normal operation of a pnp BJT, the base
must be ___ with respect to the emitter and ___
with respect to the collector.
and
A. positive, negative
B. positive, positive
C. negative, positive
D. negative, negative

A

C

40
Q

Which among the following is not
considered a semiconductor
A. boron
B. germanium
C. antimony
D. carbon

A

D

41
Q

A disadvantage of gallium-arsenide devices
is that
A. The charge carriers move fast
B. The material does not react to ionizing
radiation.
(C. It is expensive to produce.
D. It must be used at high frequencies

A

C

42
Q

Holes flow the opposite way from electrons
because

A. Charge carriers flow continuously.
B. Charge carriers are passed from atom to
atom.
C. They have the same polarity.
D. No! Holes flow in the same direction as
electrons.

A

B

43
Q

Which of the following transistor amplifiers
has the lowest output impedance?
A. The common-collector amplifier
B. The common-base amplifier
C. The common-emitter amplifier
D. None of these

A

A

44
Q

A JFET parameter that describes how
effective the gate-source voltage is in controlling
the drain current is called its
A. Gamma, y
B Transconductance, gm
C. Beta, ẞ
D. None of these

A

B

45
Q

The value of drain to source voltage, Vos at
which the drain current, ID, levels off is called
the
A. Cut-off voltage, VGs(off)
B. Pinch-off voltage, Vr
C. Breakdown voltage, VBR
D. threshold voltage, Vos(th

A

B

46
Q

When a JFET is operating in the ohmic
region,
A. Io is independent of VDs
B. lo is independent of Vas
C. lo increases in direct proportion to VDS The
D. drain acts like a current source

A

C

47
Q

For an enhancement-type MOSFET, the
threshold voltage Vos(th), is the
A. Maximum allowable gate-source voltage
before breakdown
B. Gate-source voltage that produces a leveling
off of Id
C. Minimum gate-source voltage that makes
drain current flow
D. None of the above

A

C

48
Q

For a properly biased pnp transistor, let lc =
10 mAand I = 10.2 mA. What is the level of IB?
A. 0.2 A
B. ???.00 mA
C. 200 μΑ
D. 0.2 μΑ

A

C

49
Q

ET can be used as an amplifier in which
region of operation?
A linear or active
B. ohmic
C. saturation
D. cut-off

A

A

50
Q

A p-channel D-MOSFET has Ipss = 6 mA
and Vp = 6 V. What is a. drain current when
VGs =1V?
A 8.167 mA
B. 4.167 MA
C. 6.167 mA
D. 0.616 mA

A

B

51
Q

For a given n-channel JFET, IDs: 12mA and
Vp = 6V, calculate Vos at ID=4mA.
A. 2.54 V
B.-2.54 V
C. 5.24 V
D.- 5.24 V

A

A

52
Q

The bandwidth of the amplifier is
determined by
A. The gain-bandwidth product
B. The midrange gain
C. The roll-off rate
D. The critical frequencies

A

D

53
Q

Which of the following factors has the
greatest effect on the hybrid parameters of a
transistor amplifier?
A collector current
B. temperature
C. collector voltage
D. beta

A

D

54
Q

In a normally biased npn transistor, the
electrons in the emitter have enough energy to
overcome the barrier potential of the
A Base-emitter junction
B. Base-collector junction
C. Collector-base junction
D. Recombination path

A

A

55
Q

When a free electron recombines with a
hole in the base region, the free electron
becomes
A. Another free electron
B. A valence electron
C. A conduction-band electron
D. A majority carrier

A

B

56
Q

What is the most important fact about the
collector current?
A. It is measured in milliamperes.
B. It equals the base current divided by the
current gain.
C. It is small.
D. It approximately equals the ‘emitter current.

A

D

57
Q

When testing an npn transistor using an
ohmmeter, the collector- emitter resistance will
be low when
A. the collector is positive with respect to the
emitter
B. the emitter is positive with respect to the
collector
C. the transistor is normal
D. the transistor is defective

A

D

58
Q

The major advantage of a phototransistor as
compared to a photodiode is its
A. response to higher frequencies
B. AC operation
C. Increased sensitivity
D. durability

A

C

59
Q

The current gain of a pnp transistor is
A. The negative of the npn current gain
B. The collector current divided by the emitter
current
C. Near zero
D. The ratio of collector current to base current

A

D

60
Q

For typical operation, you need to use
reverse bias with
A. zener diode
B. photodiode
C. varactor diode
D. all of the above

A

D

61
Q

A 12-V zener diode has & I-W power rating.
What is the maximum rated zener current?
A 120 mA
B. 33.3 mA
C. 46.1 mA
D. 1A

A

B

62
Q

. It isaspecial-purposediodethathasnopn
junction and is characterized by a very low
junction capacitance making it ideal for
high-speedapplications.
A.PINdiode
B.Tunneldiode
C.Hotcarrierdiode
D.Step-recoverydiode

A

C

63
Q

Due to thenonlinearityof adiode,haring
the ability to create harmonics in theoutput
signal, it isusedasa/n
A.RFswitch
B.Envelopdetector
C.Frequencymultiplier
D.Oscillator

A

C

64
Q

If theloadresistancedecreases inazener
regulator, thezenercurrent
A.decreases
B.staysthesame
C. increases
D. Equal the source voltage divided by the
seriesresistance

A

C

65
Q

. Inaninvertingamplifier,Ri=1ΚΩ,Rf=01
MohmandVi =0.6V. If theopamphasan
input bias current of 80nA, theoutput offset
voltageis
A79.2V
Β8uV
C8mV
D80.2nV

A

A

66
Q

Anidealcurrentamplifier
AHasaninfiniteinput impedance
B.Hasaninfiniteoutput impedance
C.Usesvoltagesampling
D.Usesseriesmixing

A

B

67
Q

What istheeffectof thevery largevalueof
theloopgainin. feedbackamplifier?
A.Thegainisreduced
B.Thebandwidthisenhanced
C.Thegainisstabilized
D.Allof theabove

A

D

68
Q

Howdoes negative feedbackstabilize the
gainofafeedbackamplifier?
A. Itreducesthedistortion
B.Byincreasingthebandwidth
C. By eliminating theeffect of theonen-loop
gain
D.Allof theabove

A

C

69
Q

ACSamplifierhasaloadresistanceof10
kohmandRp=820Ω. If gm=5mSandVin=
500mV, theoutsignalvoltageis
A.1.89V
B.2.05V
C.??V
D.0.5V

A

A

70
Q

Which of the following describe(s) the
difference(s)betweenJFETsanddepletion-type
MOSFETs?
A. VGS can be positive or negative for the
depletion-type.
B. ID can exceed IDSS for the depletion-type.
C. The depletion-type can operate in the
enhancement mode.
D. All of the above

A

D

71
Q

The most commonly used method of
growing silicon crystals for the manufacture of
ICs is developed by
A. Czochralsko
B. Kilby
C. Noyce
D. Moore

A

C

72
Q

The most likely thickness of a 150-mm
wafer is
A. 0.3 mm
B. 0.6mm
C. 0.8 mm
D1.0 mm

A

B

73
Q

It is the process by which films of various
materials can be laid out on the silicon wafer
A. implantation
B. doping
C. diffusion
D. deposition

A

D

74
Q

According to Moore’s Law, the number of
transistors in a chip doubles after every
approximately. months
A. 12
B. 16
C. 18
D. 24

A

D

75
Q

Which is not a linear IC?
A logic gate
B. op amp
C. comparator
D. voltage regulator

A

A

76
Q

The process used to transfer the circuit
layout in the photomask into the wafer
substrate.
A diffusion
B. photolithography
C. ion implantation
D. etching

A

B

77
Q

Which among the processes is done the
latest?
A chemical vapor deposition
B. ion implantation
Cphotolithography
D. metallization

A

D

78
Q
  1. What transistor is used in this amplifier?
    A. N-channel D-MOSFET
    B P-channel D-MOSFET
    C. N-channel E-MOSFET
    D. P-channel E-MOSFET
A

C

79
Q

What is the gate-to-source voltage?
A. 3.2 V
B. 3.0 V
C. 3.4 V
D3.5 V

A

B

80
Q

What is the value of the parameter k in
mA/V
A. 8
B. 9
C. 10
D. 12

A

D

81
Q

Calculate the drain current
A. 8 mA
B. 10 mA
C. 8.4 mA
D. 12 mA

A

D

82
Q

what is the value of the drain-to-source
voltage?
A. 5.4 V
B. 7.0 V
C. 7.2 V
D. 7.4 V

A

C

83
Q

Calculate the output voltage at the load
A 149.5 mV
B. 156.6 mV
C. 152.4 mV
D. 150.8 mV

A

B

84
Q

A differential an oliſier has a voltage gain of
120 x 10ª and a common-mode reaection ratio
of 100 dB. The common-mode gain of the
operational amplifier is
A. 1.2 x 10
B. 1.2
C. 1.2 x 1010
D. 1.2 x 10-5

A

B

85
Q
  1. An a.c. supply is 70.7 V, 50 Hz. Which of the
    following statements is false?
    A. The periodic time is 20 ms 1
    B. The peak value of the voltage is 70.7 V
    C. The r.m.s. value of the voltage is 70.7 V
    D. The peak value of the voltage is 100 V
A

B

86
Q

When the frequency of an a.c. circuit
containing resistance and capacitance is
decreased, the phase angle of the circuit
A. Decreases
C. stays the same
B. Increases

A

B

87
Q

In an R-L-C series a.c. circuit a current of 5
A flows when the supply voltage is 100 V. The
phase angle between current and voltage is 60°
lagging. Which of the following statements is
false?
A. The circuit is effectively inductive
(Ans. D. 23 A)
B. The apparent power is 500 VA
CThe equivalent circuit reactance is 20 Ω
D. The true power is 250 W

A

C

88
Q

A series a.c. circuit comprising a coil of
inductance 100 mH and resistance 12 and a 10
µF capacitor is connected across a 10 V V
supply. At resonance the p.d. across the
capacitor is
A. 10 kV
B. 1kV
C100 V
D. 10V

A

C

89
Q

Which of the following statements is false?
A. The supply current is a minimum at
resonance in a parallel circuit
B The Q factor at resonance in a parallel circuit
is the voltage magnification
C. Improving power factor reduces the current
flowing through a system
D. The circuit impedance is a maximum at
resonance in a parallel circuit

A

B

90
Q

In normal operation an n-p-n transistor
connected in common-base configuration has:
A. dc emitter at a lower potential than the base
B. the collector at a lower potential than the
base
C. the base at a lower potential than the emitter
D. the collector at a lower potential than the
emitter

A

A

91
Q

At a frequency of 2.55 MHz, a 330 pF
capacitor has a reactance of
Α.-5.28 Ω
Β.-0.00528 Ω
C.-189 Ω
D.-18.9kΩ

A

C

92
Q

A series circuit has a resistance of 600Ω
and a capacitance of 220 PF. The phase angle
is:
A.-20 degrees.
B. 20 degrees.
C.-70 degrees.
D. 70 degrees.
E. Not determinable from the data given.

A

E

93
Q

An amplifier has a de collector power input
of 300 W, and is 75.0 percent efficient. The
signal output power is:
A. 400 W.
B. 300 W.
C. 225 W
D. Variable, depending on the bias.
E. Impossible to determine from this data

A

C

94
Q

When both N-channel and P-channel transistors are found metal-oxide-semiconductor-type in a integrated circuit, the technology is known as:
A. Transistor-transistor logic.
B. CMOS.
C. bipolar logic.
D. NPNP.
E. PNPN.

A

B

95
Q

A common-base circuit is commonly
employed as:
A. Am crowave oscillator.
B. low-pass filter.
C. A phase generator.
D. A phase-locked loop.
E. A radio-frequency power amplifier.

A

E

96
Q

Which type of component is impractical to
fabricate on a silicon chip?
A. A capacitor.
B. A transistor.
C. A Diode
D. An inductor.
E. Any component can be fabricated on a
silicon chap

A

D

97
Q

A Zener diode would most likely be used in
A. A mixer.
B. A voltage-controlled oscillator.
C. A detector.
D. A power supply regulating circuit
E. An oscillalor

A

D

EST Electronics (2 decks)

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