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1
Q

Calculate the threshold voltage of a silicon
diode at a temperature of 0deg if at 25deg it has
a threshold of 0.7V
A. 0.72
B. 0.74
C. 0.76

A

C

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2
Q

The reverse saturation current of a diode at
20deg is 10nA. What will be the value of the
reverse saturation current at 100 deg?
A. 2.56uA
B. 2.75uA
C. 2.43uA
D. 2.63uA

A

A

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3
Q

Two most prevalent IC technologies are
A. BJT and FET
B. Bipolar and MOS
C.JFETS and MOSFETS
D. NMOSand PMOS

A

B

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4
Q

First basic processing step done on a silicon
wafer is?
A. oxidation
B. ion implantation
C. diffusion
D. deposition

A

A

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5
Q

It is the movement of the impurity atom at the
surface of the material into the bulk of the
material
A. ion implantation
B. etching
C. doping
D. diffusion

A

D

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6
Q

It is a process by which film of various
materials can be laid out on the silicon wafer
A. oxidation
B. ion implantation
C. diffusion
D. deposition

A

D

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7
Q

Which class of amplifier has the highest
efficiency?
A. Class A
B. Class C
C. Class B
D. Class D

A

??

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8
Q

How much energy in joules is required to
move a charge of 6C through a potential
difference of 3 V?
A. 9J
B. 3J
C. 18 J
D. 2J

A

C

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9
Q

6 A series diode circuit with a voltage source
of 10 V is connected to a 500ohm resistor.
Determine the diode current
A18.6 mA
B 16.8 mA
C14.8 mA
D15.7mA

A

A

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10
Q

The 18 V output voltage of a power supply
is applied to a zener diode voltage regulator
through a 270-ohm series resistor The zener
voltage is 10 V and the load resistance is 1 ΚΩ
Determine the load current
A10mA
B 19.6 mA
C29.6 mA
D15.6 mA

A

A

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11
Q

In an inverting amplifier, Ri = 1 ΚΩ, Rf = 01
Mohm and Vi = 0.6 V. If the op amp has an
input bias current of 80 nA, the output offset
voltage is
A79.2 V
Β 8uV
C8mV
D80.2 nV

A

A

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12
Q

Calculate the output offset voltage of an
inverting op amp circuit with VIO=12mV Ri = 2
kΩ and Rf = ‘50 ΚΩ
A91.2 mV
B 94.2 mV
C91.4mV
D92.4 mV

A

A

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13
Q

Calculate the output offset voltage of an
circuit with R1 = 2 kΩ and Rf = 150 kΩ an input
offset current, IIO
A. 15 mV
B 25 mV
C20mV
D30m

A

A

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14
Q

In normal operation an n-p-n trarisistor
connected in common-base configuration has
A. the emitter at a lower potential than the base
B. the collector at a lower potential than the
base
C. the base at a lower potential than the emitter
D. the collector at a lower potential than the
emitter

A

D

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15
Q

The closed-loop input impedance with an
ICVS amplifier is
A Usually larger than the open-loop input
impedance
B Equal to the open-loop input impedance
C Sometimes less than the open-loop
impedance
DIdeally zero

A

D

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16
Q

Negative feedback does not improve
A Stability of voltage gain
B Nonlinear distortion in later stages
COutput offset voltage
DPower bandwidth

A

D

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17
Q

Calculate the threshold voltage of a silicon
diode at a temperature of 0°C if at 25°C. it has a
threshold voltage of 0.7 V.
A. 0.72 V
B. 0.74 V
C. 0.76
D. 0.77

A

C

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18
Q

If 27 Jof energy is expended in moving 3 C of
charge between two points, what is the electric
potential difference between these two points?
A. 6 V
B. 9V
C. 8 V
D. 12 V

A

B

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19
Q

A 4-band resistor has the following colors:
blue, red, gold, gold. What is its value and
tolerance?
Α. 0.62 Ω ± 5%
Β. 6.2 Ω ± 5%
C. 62 Ω±5%
D. 62 Ω ±10%

A

B

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20
Q

If a short circuit is placed across the leads of
a resistor, the current in the resistor itself would
be
A. zero
C. the same as normal
D. excessively high
B. much higher than normal

A

C

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21
Q

Suppose you double the voltage in a simple,
circuit & cut the resistance in half. The current
will become
A. Four times as great.
C. The same as it was before.
B. Twice as great.
D. Half as great.

A

A

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22
Q

he circuit has a total resistance of
473,332ohnms and draws 4???. The best
expression for the voltage of the source is?
A. 2082V
B. 110kV
C. 2.1kV
D. 2.08266kV

A

C

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23
Q

You have an unlimited supply of 1-w, 100-Ω
resistors. You ed to get a 100-2, 10-W resistor.
This can be done most cheapl, y means of a
series-parallel ma’rix of
A. 3 X 3resistors.
B. 4 X 3resistors.
C. 4 X 4resistors.
D. 2 X 5resistors.

A

A

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24
Q

Four resistors are connected in serie, across
a 6.0-V battery. The values are R1- 10 Ω, R2 =
20 Ω, R3 = 50 2, and R4 = 100 Ω. Τ. voltage
across R2 is:
A. 0.18 V.
B. ??
C. 5.6 mV.
D. 670 mV

A

D

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25
How much total energy is converted by a 1-horsepower motor in 1) A. 7.46 kWh B. 8.32 kWh C. 8.59 kWh D. 9.32 kwn
A
26
A heater with a resistance of 8ohm is connected across the 120-V line. How much curtant does it draw? A 9A B. 18mA C. 1.5 A D. 150 mA
A
27
A potentiometer is a A. three-terminal devices used to vary the voltage in a circuit two-terminal devices used to vary the current in a circuit B. two terminal device
A
28
How much is the voltage __ a open component in a series ___? A. The full applied voltage, VT B. The voltage is slightly higher than normal C. 0V D. it cannot be determined
A
29
A voltage of 120 V is applied acı oss two resistors, R1 and R2, in series. If the voltage across R2 cquals 90 V, how much is the voltage across R1? A. 90 V B. 30 V C. 120 V D. Cannot be determined
B
30
If a resistor in a series circuit is shorted, the series current, I A. decreases B. stays the same C. increases D. drops to zero
D
31
A swamping resistor in a common-emitter amplifier. A. Stabilized the voltage gain B. Increases the voltage gain C. Reduces distortion D. Both a and c
D
32
The input signal to a transistor amplifier results in saturation during part of the cycle. This produces: A. The greatest possible amplification. B. Reduced efficiency. C. Avalanche effect. D. Nonlinear output impedance.
B
33
If the collector resistor decreases to zero in a base-biased circuit, the load line will become A. Horizontal C. Useless B, Vertical D. Flat
B
34
the emitter i resistance decreases, and the A. Q point moves up B. collector current decreases C. Q point stays where it is D. current gain increases
A
35
the disadvantage of base bias is that A. it is a very complex B. it produces low gain C. It is too beta-dependent D. it produces high leakage current
C
36
In a voltage divider bias, od pup transistor, there is no base current but the base voltage is approximately correct. The most likely problem(s) is/are A. the bias resistor is open B. the collector resistor is open C. the base-emitter junction open D. answers B and C
D
37
A certain common-emitter amplifier has a voltage gain of 100. If the emitter bypass capacitor is removed A. the circuit will become unstable B. the voltage gain wilt decrease C. the voltage gain will increase D. the Q-point will shift
B
38
Each stage of a four stage amplifier has a voltage gain of 15. The overall voltage gain is? A. 60 B. 15 C. 50,625 D. 3,078
C
39
For normal operation of a pnp BJT, the base must be ___ with respect to the emitter and ___ with respect to the collector. and A. positive, negative B. positive, positive C. negative, positive D. negative, negative
C
40
Which among the following is not considered a semiconductor A. boron B. germanium C. antimony D. carbon
D
41
A disadvantage of gallium-arsenide devices is that A. The charge carriers move fast B. The material does not react to ionizing radiation. (C. It is expensive to produce. D. It must be used at high frequencies
C
42
Holes flow the opposite way from electrons because A. Charge carriers flow continuously. B. Charge carriers are passed from atom to atom. C. They have the same polarity. D. No! Holes flow in the same direction as electrons.
B
43
Which of the following transistor amplifiers has the lowest output impedance? A. The common-collector amplifier B. The common-base amplifier C. The common-emitter amplifier D. None of these
A
44
A JFET parameter that describes how effective the gate-source voltage is in controlling the drain current is called its A. Gamma, y B Transconductance, gm C. Beta, ẞ D. None of these
B
45
The value of drain to source voltage, Vos at which the drain current, ID, levels off is called the A. Cut-off voltage, VGs(off) B. Pinch-off voltage, Vr C. Breakdown voltage, VBR D. threshold voltage, Vos(th
B
46
When a JFET is operating in the ohmic region, A. Io is independent of VDs B. lo is independent of Vas C. lo increases in direct proportion to VDS The D. drain acts like a current source
C
47
For an enhancement-type MOSFET, the threshold voltage Vos(th), is the A. Maximum allowable gate-source voltage before breakdown B. Gate-source voltage that produces a leveling off of Id C. Minimum gate-source voltage that makes drain current flow D. None of the above
C
48
For a properly biased pnp transistor, let lc = 10 mAand I = 10.2 mA. What is the level of IB? A. 0.2 A B. ???.00 mA C. 200 μΑ D. 0.2 μΑ
C
49
ET can be used as an amplifier in which region of operation? A linear or active B. ohmic C. saturation D. cut-off
A
50
A p-channel D-MOSFET has Ipss = 6 mA and Vp = 6 V. What is a. drain current when VGs =1V? A 8.167 mA B. 4.167 MA C. 6.167 mA D. 0.616 mA
B
51
For a given n-channel JFET, IDs: 12mA and Vp = 6V, calculate Vos at ID=4mA. A. 2.54 V B.-2.54 V C. 5.24 V D.- 5.24 V
A
52
The bandwidth of the amplifier is determined by A. The gain-bandwidth product B. The midrange gain C. The roll-off rate D. The critical frequencies
D
53
Which of the following factors has the greatest effect on the hybrid parameters of a transistor amplifier? A collector current B. temperature C. collector voltage D. beta
D
54
In a normally biased npn transistor, the electrons in the emitter have enough energy to overcome the barrier potential of the A Base-emitter junction B. Base-collector junction C. Collector-base junction D. Recombination path
A
55
When a free electron recombines with a hole in the base region, the free electron becomes A. Another free electron B. A valence electron C. A conduction-band electron D. A majority carrier
B
56
What is the most important fact about the collector current? A. It is measured in milliamperes. B. It equals the base current divided by the current gain. C. It is small. D. It approximately equals the 'emitter current.
D
57
When testing an npn transistor using an ohmmeter, the collector- emitter resistance will be low when A. the collector is positive with respect to the emitter B. the emitter is positive with respect to the collector C. the transistor is normal D. the transistor is defective
D
58
The major advantage of a phototransistor as compared to a photodiode is its A. response to higher frequencies B. AC operation C. Increased sensitivity D. durability
C
59
The current gain of a pnp transistor is A. The negative of the npn current gain B. The collector current divided by the emitter current C. Near zero D. The ratio of collector current to base current
D
60
For typical operation, you need to use reverse bias with A. zener diode B. photodiode C. varactor diode D. all of the above
D
61
A 12-V zener diode has & I-W power rating. What is the maximum rated zener current? A 120 mA B. 33.3 mA C. 46.1 mA D. 1A
B
62
. It isaspecial-purposediodethathasnopn junction and is characterized by a very low junction capacitance making it ideal for high-speedapplications. A.PINdiode B.Tunneldiode C.Hotcarrierdiode D.Step-recoverydiode
C
63
Due to thenonlinearityof adiode,haring the ability to create harmonics in theoutput signal, it isusedasa/n A.RFswitch B.Envelopdetector C.Frequencymultiplier D.Oscillator
C
64
If theloadresistancedecreases inazener regulator, thezenercurrent A.decreases B.staysthesame C. increases D. Equal the source voltage divided by the seriesresistance
C
65
. Inaninvertingamplifier,Ri=1ΚΩ,Rf=01 MohmandVi =0.6V. If theopamphasan input bias current of 80nA, theoutput offset voltageis A79.2V Β8uV C8mV D80.2nV
A
66
Anidealcurrentamplifier AHasaninfiniteinput impedance B.Hasaninfiniteoutput impedance C.Usesvoltagesampling D.Usesseriesmixing
B
67
What istheeffectof thevery largevalueof theloopgainin. feedbackamplifier? A.Thegainisreduced B.Thebandwidthisenhanced C.Thegainisstabilized D.Allof theabove
D
68
Howdoes negative feedbackstabilize the gainofafeedbackamplifier? A. Itreducesthedistortion B.Byincreasingthebandwidth C. By eliminating theeffect of theonen-loop gain D.Allof theabove
C
69
ACSamplifierhasaloadresistanceof10 kohmandRp=820Ω. If gm=5mSandVin= 500mV, theoutsignalvoltageis A.1.89V B.2.05V C.??V D.0.5V
A
70
Which of the following describe(s) the difference(s)betweenJFETsanddepletion-type MOSFETs? A. VGS can be positive or negative for the depletion-type. B. ID can exceed IDSS for the depletion-type. C. The depletion-type can operate in the enhancement mode. D. All of the above
D
71
The most commonly used method of growing silicon crystals for the manufacture of ICs is developed by A. Czochralsko B. Kilby C. Noyce D. Moore
C
72
The most likely thickness of a 150-mm wafer is A. 0.3 mm B. 0.6mm C. 0.8 mm D1.0 mm
B
73
It is the process by which films of various materials can be laid out on the silicon wafer A. implantation B. doping C. diffusion D. deposition
D
74
According to Moore's Law, the number of transistors in a chip doubles after every approximately. months A. 12 B. 16 C. 18 D. 24
D
75
Which is not a linear IC? A logic gate B. op amp C. comparator D. voltage regulator
A
76
The process used to transfer the circuit layout in the photomask into the wafer substrate. A diffusion B. photolithography C. ion implantation D. etching
B
77
Which among the processes is done the latest? A chemical vapor deposition B. ion implantation Cphotolithography D. metallization
D
78
68. What transistor is used in this amplifier? A. N-channel D-MOSFET B P-channel D-MOSFET C. N-channel E-MOSFET D. P-channel E-MOSFET
C
79
What is the gate-to-source voltage? A. 3.2 V B. 3.0 V C. 3.4 V D3.5 V
B
80
What is the value of the parameter k in mA/V A. 8 B. 9 C. 10 D. 12
D
81
Calculate the drain current A. 8 mA B. 10 mA C. 8.4 mA D. 12 mA
D
82
what is the value of the drain-to-source voltage? A. 5.4 V B. 7.0 V C. 7.2 V D. 7.4 V
C
83
Calculate the output voltage at the load A 149.5 mV B. 156.6 mV C. 152.4 mV D. 150.8 mV
B
84
A differential an oliſier has a voltage gain of 120 x 10ª and a common-mode reaection ratio of 100 dB. The common-mode gain of the operational amplifier is A. 1.2 x 10 B. 1.2 C. 1.2 x 1010 D. 1.2 x 10-5
B
85
79. An a.c. supply is 70.7 V, 50 Hz. Which of the following statements is false? A. The periodic time is 20 ms 1 B. The peak value of the voltage is 70.7 V C. The r.m.s. value of the voltage is 70.7 V D. The peak value of the voltage is 100 V
B
86
When the frequency of an a.c. circuit containing resistance and capacitance is decreased, the phase angle of the circuit A. Decreases C. stays the same B. Increases
B
87
In an R-L-C series a.c. circuit a current of 5 A flows when the supply voltage is 100 V. The phase angle between current and voltage is 60° lagging. Which of the following statements is false? A. The circuit is effectively inductive (Ans. D. 23 A) B. The apparent power is 500 VA CThe equivalent circuit reactance is 20 Ω D. The true power is 250 W
C
88
A series a.c. circuit comprising a coil of inductance 100 mH and resistance 12 and a 10 µF capacitor is connected across a 10 V V supply. At resonance the p.d. across the capacitor is A. 10 kV B. 1kV C100 V D. 10V
C
89
Which of the following statements is false? A. The supply current is a minimum at resonance in a parallel circuit B The Q factor at resonance in a parallel circuit is the voltage magnification C. Improving power factor reduces the current flowing through a system D. The circuit impedance is a maximum at resonance in a parallel circuit
B
90
In normal operation an n-p-n transistor connected in common-base configuration has: A. dc emitter at a lower potential than the base B. the collector at a lower potential than the base C. the base at a lower potential than the emitter D. the collector at a lower potential than the emitter
A
91
At a frequency of 2.55 MHz, a 330 pF capacitor has a reactance of Α.-5.28 Ω Β.-0.00528 Ω C.-189 Ω D.-18.9kΩ
C
92
A series circuit has a resistance of 600Ω and a capacitance of 220 PF. The phase angle is: A.-20 degrees. B. 20 degrees. C.-70 degrees. D. 70 degrees. E. Not determinable from the data given.
E
93
An amplifier has a de collector power input of 300 W, and is 75.0 percent efficient. The signal output power is: A. 400 W. B. 300 W. C. 225 W D. Variable, depending on the bias. E. Impossible to determine from this data
C
94
When both N-channel and P-channel transistors are found metal-oxide-semiconductor-type in a integrated circuit, the technology is known as: A. Transistor-transistor logic. B. CMOS. C. bipolar logic. D. NPNP. E. PNPN.
B
95
A common-base circuit is commonly employed as: A. Am crowave oscillator. B. low-pass filter. C. A phase generator. D. A phase-locked loop. E. A radio-frequency power amplifier.
E
96
Which type of component is impractical to fabricate on a silicon chip? A. A capacitor. B. A transistor. C. A Diode D. An inductor. E. Any component can be fabricated on a silicon chap
D
97
A Zener diode would most likely be used in A. A mixer. B. A voltage-controlled oscillator. C. A detector. D. A power supply regulating circuit E. An oscillalor
D

EST Electronics (2 decks)

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