Chapter 9 - Solar energy harvesting with 2D materials Flashcards
What are optoelectronic devices?
Electronic devices that either detect, generate, control or interact with light.
Give some examples of optoelectronic devices using the photoelectric effect.
Photodiode, solar cells, phototransistors, photoamplifier.
Give some examples of optoelectronic devices using photoconductivity.
Photoresistors, switches, charge-coupled imaging devices (CCDs).
Give some examples of optoelectronic devices using stimulated emission
LEDs, laser diodes.
How can radiative transition (absorption and emission) rates be calculated?
Using Fermi’s Golden Rule (with the transition matrix element).
What determines how strongly a material interacts with light`
The magnitude of the momentum matrix element.
What can be said about optical transitions in an E-k diagram?
They are vertical, due to the negligible momentum of the photon.
How does the photon absorption rate depend on the joint density of states?
It is proportional to it.
What is the joint density of states?
All the pairs of CB and VB states that can facilitate an excitation by a photon with a given energy.
What are the requirements of solar energy conversion?
We need absorption of sunlight, the ability to separate the electrons and holes and transport them to the electrodes. Then we need to transport the generated electricity to where we want it, or store it (e.g. in batteries).
How can we store energy generated by sunlight?
Electricity generated by PVs can be stored in for example batteries or supercapacitors. We could also use the sunlight to produce solar fuels, such as hydrogen or methanol through artificial photosynthesis.
What are the requirements for an efficient photocatalyst?
- High photoabsorption efficiency in visible regime.
- Separation of e-h pairs.
- Appropriate charge carrier mobility.
- High stability in water, also under illumination.
- Bandgap above 1.23 eV (due to potential needed to split water).
- Band edge suitable for water redox potential.
- High earth abundance.
What are the absorbance of TMD monolayers? How does this compare to GaAs and Si?
5-10%. For the same amount of absorbance, we need 15 nm of GaAs or 50 nm of Si.
What is required for separation of e-h pairs?
A built-in in-plane electric field.
Give three examples of how one can introduce built-in electric field?
- Schottky barrier using MoS2 / Graphene. The electrons will go from MoS2 to graphene, and holes can’t go to graphene.
2) 2D Material Heterojunction - using a type 2 heterojunction from WS2 / MoS2 interface.
3) MoS2 multilayer Schottky junction using different electrodes.