Chapter 4 (lec 11-13) Flashcards
What is carrier injection
The process of introducting excess carriers
What are the three methonds for carrier injection
Optical
Electron bombardement
Biasing
What are the two type of carrier recombination
Direct recombination ( band to band )
Indirect recombination (through trap centers )
Explain the three ways indirecet recombination can ocurr
- An electron in Ec looses energy and falls into trap level
- a hole is then generated in Et
- The electron combines with the hole, an EHP is annihilated - An electron from Et drops to Ev to create a hole in Et
- An electron from Ec drops to Et to combine with the hole and EHP is annihilated - An electron drops from Ec to Et
- The same electron drops from Et to Ev to combine with a pre existing hole in the valance band
What are the two type of excess carrier analysis
- Transient Analysis
-Momentary turning on and off of the source
- After generation the excess carriers recombine to decay their concentrations and after a certain time no more excess carriers are there - Steady state analysis
- Continous generation and recombination
- Excess carriers always present
What are the quasi-fermi level and what does it indicate
Fn and Fp are the steady state analog equilibrium fermi level when excess carriers are present
- The positions of Fn and Fp indicate how far the electron and hole concentrations are from their equilibrium values No and Po after excess carrier generation
Explain the process of diffusion
If there is a gradient (gradual change) in carrier concentration in the medium (substrate) carriers will move from a region of higher concentration to a region of lower concentration due to thermal velocity
What is diffusion current
The motion of the carrier due to the diffusion process create a current
What implies no net diffusion current
Uniform carrier concentration - implies no net motion wich means no diffusion current