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Electronics > Chapter 11 - JFETs, MOSFETs, & IGBTs > Flashcards

Chapter 11 - JFETs, MOSFETs, & IGBTs Flashcards

1
Q

Two of the most common types of FETs include the junction field-effect transistor (JFET) in the metal-oxide semiconductor field effect transistor (MOSFET).

A

TRUE

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2
Q

AC transformers are fully compatible with other semiconductor devices, such as standard bipolar transistors, SCRs, triacs, and ICs.

A

TRUE

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3
Q

A JFET Is a unipolar device, which defers in operation from a bipolar Junction transistor.

A

TRUE

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4
Q

The JFET is considered a current driven device rather than voltage driven device.

A

FALSE

A JFET a voltage driven device.

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5
Q

The size of the depletion region is controlled by the drain source voltage.

A

FALSE

The size of the depletion region is controlled by the gate to source voltage.

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6
Q

The power consumption of a JFET in standby operation is significantly more than that of a bipolar transistor controlling the same function.

A

FALSE

The power consumption is thousands of times less.

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7
Q

A Jay a FET should never be forward biased.

A

TRUE

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8
Q

In a P-channel JFET circuit, the positive swing I’ll be input signal increases the gate bias

A

TRUE

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9
Q

The input signal and I’ll put signal are in phase for the common-gate amplifier.

A

TRUE

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10
Q

In common-drain circuits for N-channel and P-channel FET ‘s, the input resistance is low.

A

FALSE

Then put resistance is high.

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11
Q

JFETs are used in many amplifier configurations because they can amplify a wide range of frequencies and have a high input impedance.

A

TRUE

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12
Q

A common-gate JFET circuit can also step up the input impedance of a bipolar transistor.

A

FALSE

A common-drain** JFET circuit

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13
Q

The JK flip-flop has unique feature of changing its state when a voltage, or high state, is applied to its J & K inputs.

A

TRUE

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14
Q

Polysilicon gates are 3 to 4 times slower than aluminum gates.

A

FALSE

They are 3 to 4 times faster**

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15
Q

The main difference in operation between a JFET and a MOSFET is that voltage is applied between the gate in the P and N regions of the MOSFET structure.

A

TRUE

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16
Q

MOSFETs are available only as P-channel devices.

A

FALSE

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17
Q

The depletion-Enhancement MOSFET has the same capacitive affect as the enhancement MOSFET.

A

TRUE

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18
Q

A MOSFET can be constructed with two gates, such as in a dual-gate MOSFET arrangement.

A

TRUE

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19
Q

Care must be exercise when handling a MOSFET since the gate insulation is very thin.

A

TRUE

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20
Q

Unlike the small signal MOSFET, the power MOSFET as fabricated with a vertical structure.

A

TRUE

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21
Q

The main advantage of power MOSFETs as the higher static drain-to-source ON-state resistance.

A

FALSE

This is the main Disadvantage

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22
Q

The main difference in construction between the power MOSFET and IGBT is the addition of an injection layer in the IGBT.

A

TRUE

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23
Q

The ON/OFF state of an IGBT is determined by the source voltage.

A

FALSE

Gate voltage

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24
Q

The OFF state of the IGBT is a Achieved by increasing the gate voltage so that it is greater than threshold voltage

A

FALSE

ON-state

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25
Q

The safe operating area is defined by the maximum collector-emitter voltage and collector current than an IGBT operation must control to protect it from damage.

A

TRUE

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26
Q

To troubleshoot and IGBT, the source to drain resistance and the collector to gate resistance should be measured.

A

FALSE

The gate to emitter*** resistance and the collector to gate resistance.

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27
Q

One disadvantage of an IGBT is that the switching speed is inferior to that of a Power MOSFET.

A

TRUE

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28
Q

In multi stage amplifiers, the signal is coupled, or connected, to several stages of application.

A

TRUE

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29
Q

Transformer coupling is a method of amplifier coupling that uses an amplifier circuit consisting of two bipolar transistors connected by a transformer.

A

TRUE

30
Q

Smaller and lighter bipolar transistors may be used with the Darlington circuit, since less power is dissipated.

A

TRUE

31
Q

A ______________ is a three or four terminal device without an injection layer in which output voltage is controlled by an input current.

A

Field effect transistor (FET)

32
Q

The newest type of FET is the ______________

A

Insulated gate bipolar transistor (IGBT)

33
Q

The two types of JFETs include the N channel in the ______________ channel.

A

P

34
Q

JFETs may be used as ______________ amplifiers.

A

Direct current, audio frequency, radio frequency.

35
Q

The ______________ region is the first portion of the characteristic curve of a JFET where the drain current rises rapidly.

A

Ohmic

36
Q

JETs can be connected into a common ______________ circuit configuration.

A

Drain, gate, source.

37
Q

In common- ______________ amplifier circuits using N channel and P channel JFETs, the AC input signal is applied to the source in the gate, with the gate at ground potential.

A

Gate

38
Q

A ______________ is a circuit that provides gain for a weak signal before the signal goes through the normal stages of amplification.

A

Preamplifier

39
Q

The main body of the ______________ MOSFET is composed of a highly resistant P type material.

A

Enhancement

40
Q

______________

mode is the operation of a MOSFET with a positive gate voltage.

A

Enhancement

41
Q

The primary characteristic that is most desirable in a solid-state switch is ______________.

A

Fast switching speed, simple drive requirements, and low conduction loss.

42
Q

The advantage of using power MOSFETs over power bipolar transistors is ______________.

A

Faster switching, lower switching losses, and wider safe operating area (SOA).

43
Q

A ______________ is a three terminal switching device that combines a FET for control with a bipolar transistor for switching.

A

Insulated gate bipolar transistor IGBT

44
Q

IGBT operation consist of a ______________ operation.

A

Blocking, on/off state, and latch up.

45
Q

The types of safe operating areas for IGBT’s are the Forward biased safe operating area, reversed biased safe operating area, and ______________ safe operating area.

A

Short circuit

46
Q

The main advantage of using an IGBT is ______________.

A

Low on state voltage drop, small chip size, low driving power.

47
Q

IGBT applications include a adjustable frequency drive and ______________.

A

Pulse width modulation

48
Q

The basic technique for coupling amplifier stages together and to loads is ______________ coupling.

A

Capacitive, transformer, and direct.

49
Q

______________ coupling is a method of amplifier coupling in which one transistor is directly connected to the base of a second transistor.

A

Direct

50
Q

A ______________ circuit is an amplifier circuit in which the admit her of one transistor is connected to the base of a second transistor.

A

Darlington

51
Q

Field ______________ transistors have been the corner stone of new developments and semiconductor technology.

A

Effect

52
Q

A ______________ is a simple field effect transistor (FET) with a PN Junction in which output current is controlled by an input voltage.

A

JFET

53
Q

In JFET operation, ______________ to source Voltage controls the drain current and must always provide a reverse bias voltage.

A

Gate

54
Q

A JFET ______________ curve shows operating characteristics of a JFET.

A

Characteristic

55
Q

In a ______________ source amplifier, an AC signal is applied across the gate resistor.

A

Common

56
Q

The ______________-gate circuit is used in applications were the source of the signal requires a low to high impedance match.

A

Common

57
Q

A ______________ matching circuit can step down impedance levels and preserve the band with and Linearity of the signals being amplified.

A

Impedance

58
Q

A ______________ is a three to terminal or four terminal electronic switching device with metal oxide or polysilicon insulating material that can be used for amplification.

A

MOSFET

59
Q

The ______________ MOSFET is constructed similarly to the enhancement MOSFET.

A

Depletion

60
Q

______________ mode is the operation of a MOSFET with a negative gate voltage.

A

Depletion

61
Q

_____________ MOSFETs exhibit the properties of a small signal MOSFETs but are designed to handle higher currents.

A

Power

62
Q

Power MOSFETs were designed primarily for ______________ applications.

A

Switching

63
Q

The ______________ area is the current Voltage limit in which a power switching device like an IGBT can be operated without being destroyed.

A

Safe operating

64
Q

The two types of structures used for IGBT construction are the ______________ structure in the non-punching through (NPT) structure.

A

Punch through (PT)

65
Q

______________ drives are a significant part of green technology.

A

Adjustable frequency

66
Q

______________ is a type of adjustable frequency drive that she’s frequency and Voltage control.

A

Pulse Width Modulation Motor Control (PWP)

67
Q

A ______________ amplifier is an amplifier circuit that allow several stages of application.

A

Multi stage

68
Q

______________ coupling is the joining of two or more circuit so that power can be transferred from one amplifier Stage to another

A

Amplifier

69
Q

______________ coupling is a method of amplifier coupling that uses an amplifier circuit consisting of two bipolar transistors connected by a capacitor.

A

Capacitative

70
Q

______________ coupling is a method of amplifier completing that uses an amplifier circuit consisting of two bipolar transistors connected by transformer.

A

Transformer

Electronics (4 decks)

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