Chapter 10 Flashcards

1
Q

charge carriers

A

electrons, electron holes, anions, cations

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2
Q

which material has the highest conductivity

A

metals, then semiconductors

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3
Q

types of semiconductors

A

Silicon, Germanium

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4
Q

conductivity of ceramics

A

mostly low, except for a few (Fe3O4 and RuO2)

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5
Q

conductivity of polymers

A

low

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6
Q

rank materials from most to least resistive

A

insulators
semiconductors
metallic
superconductor

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7
Q

what happens to the electron distribution in a partially filled band when temperature increases

A

electrons begin to shift and spread out (representative of metallic behavior)

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8
Q

Fermi-Dirac Statistics

A

occupancy is higher the higher the temperature

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9
Q

energy band diagrams for conductors

A

no gap at all

partially filled valence band at 0 K

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10
Q

energy band diagrams for semiconductors

A

small gap
completely filled valence band at 0 K
Eg <= 2.5

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11
Q

energy band diagrams for insulators

A

large gaps
completely filled valence band at 0 K
Eg > 2.5

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12
Q

charge carriers for metals

A

electrons
N is constant
q is constant
mu ~ (1/T)

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13
Q

charge carriers for semiconductors

A

electrons and holes

N increases with increasing temperature

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14
Q

charge carriers for insulators

A

anions, cations, electrons, and holes
N increases with increasing temperature
q varies according to charge carrier

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15
Q

factors that affect conductivity in metals

A

vacancies, foreign atoms, thermal vibrations

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16
Q

influence of alloying in conductivity

A

alloying decreases conductivity

17
Q

influence of cold working on conductivity

A

decreases conductivity

18
Q

number of charge carriers in insulators

A

depends exponentially on temperature

19
Q

carrier transferrence number

A

t= sigma(carrier)/sigma(total)

20
Q

n-type conductivity

A

an extra electron from a group V donor atom hovers in the gap along the Ed line
extrinsic

21
Q

p-type conductivity

A

an electron hole created by an atom with less electrons hovers in the gap along the Ea line
extrinsic

22
Q

Define: E(g) DeltaE, mu(e) mu(h) N

A
Eg=band gap
DeltaE=impurity energy levels
mu_e=electron mobility
mu_h=hole mobility
N=carrier density
23
Q

Dopants for Silicon

A

P, Sb, Al, Ga

24
Q

Dopants for Ga As

25
p-n junction
basis of all microelectronic devices | reverse bias limits amount of current that can flow and forms an insulating barrier at junction
26
concept of superconductivity
At the critical temperature, the vibrational frequency of the electron pairs corresponds to the vibrational frequency of the atomic nuclei. The result of this correlation between vibrational frequencies is a synchronized motion of the electron pairs through the vibrating crystal lattice. Because the motion is synchronized, the time between collisions, and hence the conductivity, increases without limit
27
intrinsic conduction
semiconducting behavior resulting from the band structure of a pure element or compound
28
extrinsic conductions
semiconducting behavior facilitated by the presence of impurities
29
forward bias
when the negative potential is applied to the n-type side of the p-n junction