Chapter 10 Flashcards

1
Q

charge carriers

A

electrons, electron holes, anions, cations

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2
Q

which material has the highest conductivity

A

metals, then semiconductors

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3
Q

types of semiconductors

A

Silicon, Germanium

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4
Q

conductivity of ceramics

A

mostly low, except for a few (Fe3O4 and RuO2)

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5
Q

conductivity of polymers

A

low

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6
Q

rank materials from most to least resistive

A

insulators
semiconductors
metallic
superconductor

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7
Q

what happens to the electron distribution in a partially filled band when temperature increases

A

electrons begin to shift and spread out (representative of metallic behavior)

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8
Q

Fermi-Dirac Statistics

A

occupancy is higher the higher the temperature

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9
Q

energy band diagrams for conductors

A

no gap at all

partially filled valence band at 0 K

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10
Q

energy band diagrams for semiconductors

A

small gap
completely filled valence band at 0 K
Eg <= 2.5

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11
Q

energy band diagrams for insulators

A

large gaps
completely filled valence band at 0 K
Eg > 2.5

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12
Q

charge carriers for metals

A

electrons
N is constant
q is constant
mu ~ (1/T)

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13
Q

charge carriers for semiconductors

A

electrons and holes

N increases with increasing temperature

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14
Q

charge carriers for insulators

A

anions, cations, electrons, and holes
N increases with increasing temperature
q varies according to charge carrier

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15
Q

factors that affect conductivity in metals

A

vacancies, foreign atoms, thermal vibrations

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16
Q

influence of alloying in conductivity

A

alloying decreases conductivity

17
Q

influence of cold working on conductivity

A

decreases conductivity

18
Q

number of charge carriers in insulators

A

depends exponentially on temperature

19
Q

carrier transferrence number

A

t= sigma(carrier)/sigma(total)

20
Q

n-type conductivity

A

an extra electron from a group V donor atom hovers in the gap along the Ed line
extrinsic

21
Q

p-type conductivity

A

an electron hole created by an atom with less electrons hovers in the gap along the Ea line
extrinsic

22
Q

Define: E(g) DeltaE, mu(e) mu(h) N

A
Eg=band gap
DeltaE=impurity energy levels
mu_e=electron mobility
mu_h=hole mobility
N=carrier density
23
Q

Dopants for Silicon

A

P, Sb, Al, Ga

24
Q

Dopants for Ga As

A

Se, Cd

25
Q

p-n junction

A

basis of all microelectronic devices

reverse bias limits amount of current that can flow and forms an insulating barrier at junction

26
Q

concept of superconductivity

A

At the critical temperature, the vibrational frequency of the electron pairs corresponds to the vibrational frequency of the atomic nuclei. The result of this correlation between vibrational frequencies is a synchronized motion of the electron pairs through the vibrating crystal lattice. Because the motion is synchronized, the time between collisions, and hence the conductivity, increases without limit

27
Q

intrinsic conduction

A

semiconducting behavior resulting from the band structure of a pure element or compound

28
Q

extrinsic conductions

A

semiconducting behavior facilitated by the presence of impurities

29
Q

forward bias

A

when the negative potential is applied to the n-type side of the p-n junction