BJT GIBILISCO Flashcards
- In a PNP circuit, the collector
a has an arrow pointing inward.
b) is positive with respect to the emitter..
c.) is biased at a small reaction or the base bias.
d) is negative with respect to the emitter.
d) is negative with respect to the emitter.
- In many cases, a PNP transistor can be replaced with an NPN device and the circuit will do the same thing, provided that
a) the power supply or battery polarity is reversed.
b) the collector and emitter leads are interchanged.
c) the arrow is pointing inward.
d) Forget it! A PNP transistor can never be replaced with an NPN transistor.
a) the power supply or battery polarity is reversed.
- A bipolar transistor has
a) three P-N junctions.
b) three semiconductor layers.
c) two N-type lavers around a P-type laver.
d) a low avalanche voltage.
b) three semiconductor layers.
- In the dual-diode model of an NPN transistor, the emitter corresponds to
a) the point where the cathodes are connected together.
b) the point where the cathode of one diode is connected to the anode of the other.
c) the point where the anodes are connected together.
d) either of the diode cathodes.
d) either of the diode cathodes.
- The current through a transistor depends on
a) EC.
b) EB relative to EC.
С) IB.
d) more than one of the above.
d) more than one of the above.
- with no signal input, a bipolar transistor would have the least IC when
a the emitter is grounded.
b) the E-B junction is forward-biased.
c. the E-B junction is reverse-biased.
d. the E-B current is high.
c. the E-B junction is reverse-biased.
When a transistor is conducting as much as it can, it is said to be
a) in a state of cutoff
b) in a state of saturation.
c) in a state of reverse bias.
D. in a state or avalanche breakdown.
b) in a state of saturation.
Refer to the curve shown in Fig. 22-12. Which operating point is best if a large amplification factor is desired with a weak signal input?
a) Point A
o Point E
c) Point C
d) Point D
c) Point C
In Fig. 22-12, the forward breakover point for the E-B junction is
nearest to
a) no point on this graph.
b) point B.
c) point C.
b) point B.
- In Fig. 22-12, saturation is nearest to
a) point A.
b) point B.
c) point C.
d) point D.
d) point D.
- In Fig. 22-12, the greatest gain occurs at
a) point A.
b) point B.
c) point c.
d) point D.
c) point c.
- In a common emitter circuit, the gain bandwidth product is
a) the frequency at which the gain is 1.
b) the frequency at which the gain is 0.707 times its value at 1 MHz.
c) the frequency at which the gain is greatest.
d) the difference between the frequency at which the gain is greatest, and the frequency at which the gain is 1.
a) the frequency at which the gain is 1.
- The bipolar-transistor configuration most often used for matching a high input impedance to a low output impedance puts signal ground at
a) the emitter.
b) the base.
c) the collector.
d) any point; it doesn’t matter.
c) the collector.
- The output is in phase with the input in
a) a common emitter circuit.
b) a common base circuit.
c) a common collector circuit.
d) more than one of the above.
d) more than one of the above.
- The greatest possible amplification is obtained in
a) a common emitter circuit.
b) a common base circuit.
c) a common collector circuit.
d) more than one of the above.
a) a common emitter circuit.
- The input is applied to the collector in
a common emitter circuit.
b) a common base circuit.
c) a common collector circuit.
d) none of the above.
d) none of the above.