1. Transistors Flashcards

1
Q

How is the definition of ‘actuator’ made distinct from that for a ‘motor’?

A

A motor generally is used to signify a machine used for rotary motion

An actuator is a more general term to describe a machine that converts electricity to motion

Book 4 page 1

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2
Q

What does a driver circuit do?

A

Switches large currents on and off in response to a digital signal from a microcontroller or other logic device

Book 4 page 2

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3
Q

What does a type of driver called a power amplifier do?

A

If the speed of a motor is to be varied, a power amplifier can do this by varying the voltage or current in proportion to an analogue signal

Book 4 page 2

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4
Q

What techniques might be available to use a digital code rather than an analogue signal to control the speed of a motor or other device?

A

DAC converter

Pulse-width modulation (PWM)

Book 4 page 2

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5
Q

How are the small number of electrons shaken free in semiconductors?

A

Thermal agitation

Book 4 page 3

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6
Q

What is meant by the term tetravalent, eg silicon is tetravalent?

A

Each atom provides four electrons for bonding and therefore forms four covalent bonds

Book 4 page 3

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7
Q

Explain the difference between intrinsic and extrinsic semiconductors?

A

An intrinsic semiconductor is a material such as pure silicon and germanium which naturally exhibits the semiconductor properties owing to its pure structure

An extrinsic semiconductor is a material which has been artificially changed, or doped, to considerably increase its conductivity

Book 4 page 4

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8
Q

What type of doping results in an n-type semiconductor?

A

Additional negatively charged free electrons have been produced which become the majority charge carriers

Book 4 page 4

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9
Q

What type of doping will phosphorous and boron provide and why?

A

Phosphorous - pentavalent meaning it is able to form five covalent bonds, so each atom provides one extra free electron, therefore this is an n-type

Boron - trivalent meaning it is able to form three covalent bonds, so each atom leaves one extra hole, therefore this is a p-type

Book 4 page 5

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10
Q

What is contact potential?

A

The potential that exists at a p-n junction

The p-type side has negative potential because some of the holes have diffused out

The n-type side has positive potential because some of the electrons have diffused out

Book 4 page 6

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11
Q

What is drift in a p-n junction?

A

The reverse motion of charge carriers at a p-n junction caused by an electrostatic force opposing the diffusion of the charge carriers as soon as diffusion begins to take place

Book 4 page 6

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12
Q

What are the connections, and therefore the layers, called in a BJT?

A
  • Collector
  • Base
  • Emitter

Book 4 page 7

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13
Q

What is the relationship between IB and IC when VCE is above a minimum value of about 2V in a silicon BJT?

A

IC is proportional to IB and is nearly independent of VCE

Book 4 page 8

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14
Q

What is the function of a base-emitter junction in a BJT?

A

Acts like a gate to control the flow of charges through the collector

Book 4 page 9

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15
Q

What is the bias of the junctions in a BJT?

A

Base emitter - forward biased

Base collector - reverse biased

Book 4 page 9

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16
Q

What is the equation which describes the relationship between IC and IB in a BJT?

A

IC=β x IB

Where β is the current gain, typically 100

Book 4 page 9

17
Q

What is low-side switching and high-side switching?

A

Low-side switching - The switching element, the transistor, is on the side of the load with the lower voltage

High-side switching - The switching element is between the positive supply voltage and the load

Book 4 page 13

18
Q

What solution might there to be one transistor not providing enough current to drive a large motor?

A

Use two (or more) transistors in a circuit that takes the output of one transistor and feeds it to the input of the next transistor, so that the gains of the transistors are multiplied together

Book 4 page 14

19
Q

What is the configuration of a Darlington Pair?

A

The collectors of the two transistors are connected together, and the emitter of the first transistor drives the base of the second

Book 4 page 14

20
Q

What is the configuration of a two-transistor high-side driver?

A

An npn and a pnp transistor combined such that the npn collector feeds to the base of the pnp, switching it off and on as required

Book 4 page 14

21
Q

How does the function of a MOSFET differ from a BJT transistor?

A

It is a switching device which responds directly to voltage, and requires little current

Book 4 page 15

22
Q

What does ‘field-effect’ refer to in a MOSFET?

A

There is no direct electrical connection between the conducting layer and the semiconductor

The electric field of the conducting layer influences the behaviour of the semiconductor, just as the plates of the capacitor interact with each other

Book 4 page 15

23
Q

What is the body or substrate upon which an n-channel MOSFET is built?

A

P-type silicon

Book 4 page 16

24
Q

What are the two n-type regions called in a n-channel MOSFET?

A

Source and the drain

Book 4 page 16

25
How does an n-channel MOSFET function?
When a positive voltage is applied to the gate, the electric effect draws more electrons to the region of substrate underneath it When the gate-to-source voltage exceeds a certain minimum, called the threshold voltage, sufficient electrons accumulate in this region to form a conductive channel between the source and the drain The channel effectively behaves in the same way as n-type silicon, even though by doping it is p-type | Book 4 page 16
26
What is 'pinch-off' with regards to MOSFETs?
For a given gate-to-source voltage, the drain current does not increase much with further increases in drain-to-source voltage | Book 4 page 17
27
What are the symbols for MOSFETs?
28
What is important to note about MOSFETs and changing voltage?
MOSFETs have capacitance and so will take some current if the voltage is changing Where MOSFETs are used in applications where they switch many thousands of times a second, the gate current can become significant | Book 4 page 18